Reference health

Intergrain Diffusion of Carbon Radical for Wafer-Scale, Direct Growth of Graphene on Silicon-Based Dielectrics

66/66 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 66 checked references that resolve

resolves10.1126/science.1102896

Electric Field Effect in Atomically Thin Carbon Films

resolves10.1038/nature11458

A roadmap for graphene

resolves10.1109/ISDRS.2009.5378220

The ITRS metrology roadmap

resolves10.1002/adma.201504760

Synthesis of Graphene Films on Copper Foils by Chemical Vapor Deposition

resolves10.1002/adma.201304872

Near‐Equilibrium Chemical Vapor Deposition of High‐Quality Single‐Crystal Graphene Directly on Various Dielectric Substrates

resolves10.1039/C1JM14778A

Direct growth of few-layer graphene films on SiO 2 substrates and their photovoltaic applications

resolves10.1021/ja2063633

Oxygen-Aided Synthesis of Polycrystalline Graphene on Silicon Dioxide Substrates

resolves10.1002/adma.201202973

Two‐Stage Metal‐Catalyst‐Free Growth of High‐Quality Polycrystalline Graphene Films on Silicon Nitride Substrates

resolves10.1021/jp2017709

Catalyst-Free Direct Growth of Triangular Nano-Graphene on All Substrates

resolves10.1002/pssa.201329172

Vertically oriented few-layer graphene as an electron field-emitter

resolves10.1166/jnn.2016.11028

Electrical Characteristics of Horizontally and Vertically Oriented Few-Layer Graphene on Si-Based Dielectrics

resolves10.1021/nn305486x

van der Waals Epitaxial Growth of Graphene on Sapphire by Chemical Vapor Deposition without a Metal Catalyst

resolves10.1021/ja5022602

Direct Growth of High-Quality Graphene on High-κ Dielectric SrTiO3 Substrates

resolves10.1038/nmat3695

Epitaxial growth of single-domain graphene on hexagonal boron nitride

resolves10.1038/ncomms7835

Temperature-triggered chemical switching growth of in-plane and vertically stacked graphene-boron nitride heterostructures

resolves10.1002/adma.201204904

A Platform for Large‐Scale Graphene Electronics – CVD Growth of Single‐Layer Graphene on CVD‐Grown Hexagonal Boron Nitride

resolves10.1021/nn202923y

Direct Growth of Bilayer Graphene on SiO2 Substrates by Carbon Diffusion through Nickel

resolves10.1038/nature09579

Growth of graphene from solid carbon sources

resolves10.1021/nl201362n

Direct Formation of Wafer Scale Graphene Thin Layers on Insulating Substrates by Chemical Vapor Deposition

resolves10.1021/nl102355e

Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst

resolves10.1126/science.1130681

Controlling the Electronic Structure of Bilayer Graphene

resolves10.1021/nl104000b

Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition

resolves10.1021/nn302918x

High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene

resolves10.1021/acsami.6b01976

Electrical Transport and Network Percolation in Graphene and Boron Nitride Mixed-Platelet Structures

resolves10.1103/PhysRevLett.100.156102

Effect of Metal Elements in Catalytic Growth of Carbon Nanotubes

resolves10.1063/1.3624524

Ab initio calculations of the reaction pathways for methane decomposition over the Cu (111) surface

resolves10.1021/ja300811p

Selective Graphene Formation on Copper Twin Crystals

resolves10.1021/nn5015177

Asymmetric Growth of Bilayer Graphene on Copper Enclosures Using Low-Pressure Chemical Vapor Deposition

resolves10.1021/nn3008965

Activation Energy Paths for Graphene Nucleation and Growth on Cu

resolves10.1038/nnano.2016.132

Ultrafast growth of single-crystal graphene assisted by a continuous oxygen supply

resolves10.1038/nnano.2015.322

Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene

resolves10.1021/jp4108156

Bilayer Graphene Growth via a Penetration Mechanism

resolves10.1021/nl201566c

Effects of Polycrystalline Cu Substrate on Graphene Growth by Chemical Vapor Deposition

resolves10.1021/jp4047648

Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure

resolves10.1038/nnano.2013.46

Raman spectroscopy as a versatile tool for studying the properties of graphene

resolves10.1016/j.carbon.2007.11.015

Measuring the degree of stacking order in graphite by Raman spectroscopy

resolves10.1039/B613962K

Studying disorder in graphite-based systems by Raman spectroscopy

resolves10.1063/1.3605545

Raman and optical characterization of multilayer turbostratic graphene grown via chemical vapor deposition

resolves10.1126/science.1167130

Control of Graphene's Properties by Reversible Hydrogenation: Evidence for Graphane

resolves10.1021/nl0808684

Graphene Oxidation: Thickness-Dependent Etching and Strong Chemical Doping

resolves10.1063/1.1674108

Raman Spectrum of Graphite

resolves10.1021/nl1029607

Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate

resolves10.1126/science.1243879

The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper

resolves10.1021/jz400400u

No Graphene Etching in Purified Hydrogen

resolves10.1021/nl300039a

Vapor Trapping Growth of Single-Crystalline Graphene Flowers: Synthesis, Morphology, and Electronic Properties

resolves10.1021/nn504822m

Chemical Vapor Deposition of High Quality Graphene Films from Carbon Dioxide Atmospheres

resolves10.1021/nn205068n

Synthesis of High Quality Monolayer Graphene at Reduced Temperature on Hydrogen-Enriched Evaporated Copper (111) Films

resolves10.1039/c1cp22347j

Graphene CVD growth on copper and nickel: role of hydrogen in kinetics and structure

resolves10.1103/PhysRevLett.98.076602

Quantum Transport of Massless Dirac Fermions

resolves10.1038/nphys781

Observation of electron–hole puddles in graphene using a scanning single-electron transistor

resolves10.1038/nphys1365

Origin of spatial charge inhomogeneity in graphene

resolves10.1021/nl070613a

Atomic Structure of Graphene on SiO2

resolves10.1103/PhysRevLett.100.016602

Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer

resolves10.1038/nnano.2008.58

Intrinsic and extrinsic performance limits of graphene devices on SiO2

resolves10.1103/PhysRevB.76.233404

Voltage and temperature dependencies of conductivity in gated graphene

resolves10.1063/1.3077021

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

resolves10.1016/j.ssc.2009.02.039

Influence of metal contacts and charge inhomogeneity on transport properties of graphene near the neutrality point

resolves10.1088/0957-4484/23/1/015701

Electrical characterization of graphene synthesized by chemical vapor deposition using Ni substrate

resolves10.1140/epjst/e2007-00221-9

Temperature dependent electron transport in graphene

resolves10.1103/PhysRevB.80.235402

Carrier scattering, mobilities, and electrostatic potential in monolayer, bilayer, and trilayer graphene

resolves10.1103/PhysRevB.77.115449

Acoustic phonon scattering limited carrier mobility in two-dimensional extrinsic graphene

resolves10.1038/nnano.2008.199

Approaching ballistic transport in suspended graphene

resolves10.1103/PhysRevLett.94.166601

Metal-Insulator-Like Behavior in Semimetallic Bismuth and Graphite

resolves10.1063/1.1862334

Fabrication and electric-field-dependent transport measurements of mesoscopic graphite devices

resolves10.1103/PhysRevB.86.235423

Efros-Shklovskii variable-range hopping in reduced graphene oxide sheets of varying carbon<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>s</mml:mi><mml:msup><mml:mi>p</mml:mi><mml:mn>2</mml:mn></mml:msup></mml:mrow></mml:math>fraction

resolves10.1038/ncomms1834

Nanotomy-based production of transferable and dispersible graphene nanostructures of controlled shape and size

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-22 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

view as graph · paper page

Embed this badge

Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.

<a href="https://citestamp.com/citestamped/10.1021/acsami.8b07655"><img src="https://citestamp.com/citestamped/10.1021/acsami.8b07655/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>

[![CiteStamped reference-health badge](https://citestamp.com/citestamped/10.1021/acsami.8b07655/badge.svg)](https://citestamp.com/citestamped/10.1021/acsami.8b07655)