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Defect Engineering in Single-Layer MoS<sub>2</sub> Using Heavy Ion Irradiation
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 54 checked references that resolve
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Field Effect Enhanced Hydrogen Evolution Reaction of MoS<sub>2</sub> Nanosheets
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All The Catalytic Active Sites of MoS<sub>2</sub> for Hydrogen Evolution
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Electrochemical generation of sulfur vacancies in the basal plane of MoS2 for hydrogen evolution
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Controlling Ferromagnetic Easy Axis in a Layered<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>Single Crystal
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Native defects in bulk and monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>from first principles
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Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
resolves10.1021/acsnano.7b08418
Tuning Electronic Structure of Single Layer MoS<sub>2</sub> through Defect and Interface Engineering
resolves10.1038/nmat4465
Activating and optimizing MoS2 basal planes for hydrogen evolution through the formation of strained sulphur vacancies
resolves10.1021/acs.nanolett.5b04331
Defects Engineered Monolayer MoS<sub>2</sub> for Improved Hydrogen Evolution Reaction
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Adsorption of gas molecules on monolayer MoS2 and effect of applied electric field
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Two-Dimensional Transition Metal Dichalcogenides under Electron Irradiation: Defect Production and Doping
resolves10.1039/C5CC01981H
Plasma-engineered MoS
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resolves10.1038/ncomms3642
Hopping transport through defect-induced localized states in molybdenum disulphide
resolves10.1038/nmat4061
Giant bandgap renormalization and excitonic effects in a monolayer transition metal dichalcogenide semiconductor
resolves10.1021/nn5004327
Postgrowth Tuning of the Bandgap of Single-Layer Molybdenum Disulfide Films by Sulfur/Selenium Exchange
resolves10.1021/acs.nanolett.5b01673
Nanopatterning and Electrical Tuning of MoS<sub>2</sub> Layers with a Subnanometer Helium Ion Beam
resolves10.1088/0953-8984/25/25/252201
Controlled argon beam-induced desulfurization of monolayer molybdenum disulfide
resolves10.1103/PhysRevB.91.195411
Effect of disorder on Raman scattering of single-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mo</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1002/adma.201606760
Engineering Chemically Active Defects in Monolayer MoS<sub>2</sub> Transistors via Ion‐Beam Irradiation and Their Healing via Vapor Deposition of Alkanethiols
resolves10.1021/acsami.8b10569
Generating Sub-nanometer Pores in Single-Layer MoS<sub>2</sub> by Heavy-Ion Bombardment for Gas Separation: A Theoretical Perspective
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Mechanism of the Defect Formation in Supported Graphene by Energetic Heavy Ion Irradiation: the Substrate Effect
resolves10.1021/acsami.7b00420
Centimeter-Scale CVD Growth of Highly Crystalline Single-Layer MoS<sub>2</sub> Film with Spatial Homogeneity and the Visualization of Grain Boundaries
resolves10.1021/nl4033704
Role of the Seeding Promoter in MoS<sub>2</sub> Growth by Chemical Vapor Deposition
resolves10.1021/nn4024834
Exceptional Tunability of Band Energy in a Compressively Strained Trilayer MoS<sub>2</sub> Sheet
resolves10.1103/PhysRevB.88.035301
From point to extended defects in two-dimensional MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>: Evolution of atomic structure under electron irradiation
resolves10.1021/acsnano.6b05952
Nanoscale-Barrier Formation Induced by Low-Dose Electron-Beam Exposure in Ultrathin MoS<sub>2</sub> Transistors
resolves10.1007/s11249-011-9774-x
A Raman Spectroscopic Study of MoS2 and MoO3: Applications to Tribological Systems
resolves10.1038/nmat3633
Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
resolves10.1039/C5RA01439E
Tuning the photoluminescence and ultrasensitive trace detection properties of few-layer MoS
<sub>2</sub>
by decoration with gold nanoparticles
resolves10.1021/nl4011172
Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating
resolves10.1063/1.4897522
Mo-O bond doping and related-defect assisted enhancement of photoluminescence in monolayer MoS<sub>2</sub>
resolves10.1103/PhysRevB.85.161403
Symmetry-dependent phonon renormalization in monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>transistor
resolves10.1021/nn500532f
Strong Photoluminescence Enhancement of MoS<sub>2</sub> through Defect Engineering and Oxygen Bonding
resolves10.1126/science.1141483
Identification of Active Edge Sites for Electrochemical H
<sub>2</sub>
Evolution from MoS
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Nanocatalysts
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