Reference health

Enhanced Photoresponsivity of a GaAs Nanowire Metal-Semiconductor-Metal Photodetector by Adjusting the Fermi Level

32/32 checkable references clean · checked 2026-08-03

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 32 checked references that resolve

resolves10.1002/smll.201704429

High‐Responsivity Photodetection by a Self‐Catalyzed Phase‐Pure p‐GaAs Nanowire

resolves10.1021/nl5006004

GaAs/AlGaAs Nanowire Photodetector

resolves10.1021/acs.nanolett.5b00089

Rectifying Single GaAsSb Nanowire Devices Based on Self-Induced Compositional Gradients

resolves10.1016/j.mssp.2016.05.015

Self-catalyzed molecular beam epitaxy growth and their optoelectronic properties of vertical GaAs nanowires on Si(111)

resolves10.1002/adom.201600221

Photoinduced Schottky Barrier Lowering in 2D Monolayer WS2 Photodetectors

resolves10.1002/adfm.201602408

Broadband Photoresponse Enhancement of a High‐Performance t‐Se Microtube Photodetector by Plasmonic Metallic Nanoparticles

resolves10.1063/1.4961217

Bandwidth enhancement of MgZnO-based MSM photodetectors by inductive gain peaking

resolves10.1002/adfm.201802954

Self‐Driven Metal–Semiconductor–Metal WSe2 Photodetector with Asymmetric Contact Geometries

resolves10.1021/nn500201g

Single InAs Nanowire Room-Temperature Near-Infrared Photodetectors

resolves10.1021/acsami.5b06452

High-Performance GaAs Nanowire Solar Cells for Flexible and Transparent Photovoltaics

resolves10.1038/ncomms7485

Surface transfer doping induced effective modulation on ambipolar characteristics of few-layer black phosphorus

resolves10.1002/smll.201600692

Selenium‐Doped Black Phosphorus for High‐Responsivity 2D Photodetectors

resolves10.1063/1.3428358

Incorporation of the dopants Si and Be into GaAs nanowires

resolves10.1021/nl3025714

A Story Told by a Single Nanowire: Optical Properties of Wurtzite GaAs

resolves10.1007/bf02662735

Epitaxy of silicon doped gallium arsenide by molecular beam method

resolves10.1016/j.jlumin.2014.01.066

Photoluminescence of the single wurtzite GaAs nanowire with different powers and temperatures

resolves10.1039/c8nr00158h

A graphene/single GaAs nanowire Schottky junction photovoltaic device

resolves10.1021/nn305289w

Controllable Electrical Properties of Metal-Doped In2O3 Nanowires for High-Performance Enhancement-Mode Transistors

resolves10.1021/acsnano.8b03291

High-Performance Near-Infrared Photodetectors Based on p-Type SnX (X = S, Se) Nanowires Grown via Chemical Vapor Deposition

resolves10.1021/acs.nanolett.8b01795

Room-Temperature Single-Photon Detector Based on Single Nanowire

resolves10.1007/s11434-014-0687-6

Single-GaSb-nanowire-based room temperature photodetectors with broad spectral response

resolves10.1021/acsami.6b13771

Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction

resolves10.1002/pssr.201800310

Black Phosphorus Infrared Photodetectors with Fast Response and High Photoresponsivity

resolves10.1016/j.nanoen.2018.04.034

WSe2/GeSe heterojunction photodiode with giant gate tunability

resolves10.1063/1.4966899

A monolayer graphene/GaAs nanowire array Schottky junction self-powered photodetector

resolves10.1088/1361-6528/aaa4d6

Analysis of the influence and mechanism of sulfur passivation on the dark current of a single GaAs nanowire photodetector

resolves10.1088/0957-4484/26/44/445202

Room temperature GaAsSb single nanowire infrared photodetectors

resolves10.1002/smll.201804150

Highly Efficient and Ultrasensitive Large‐Area Flexible Photodetector Based on Perovskite Nanowires

resolves10.1002/adom.201801522

Single‐Crystal ZnO/AlN Core/Shell Nanowires for Ultraviolet Emission and Dual‐Color Ultraviolet Photodetection

resolves10.1038/srep19138

High performance broadband photodetector using fabricated nanowires of bismuth selenide

resolves10.1038/s41598-017-18166-4

Robust broad spectral photodetection (UV-NIR) and ultra high responsivity investigated in nanosheets and nanowires of Bi2Te3 under harsh nano-milling conditions

resolves10.1038/s41598-019-40394-z

Novel synthesis of topological insulator based nanostructures (Bi2Te3) demonstrating high performance photodetection

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-08-03 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

view as graph · paper page

Embed this badge

Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.

<a href="https://citestamp.com/citestamped/10.1021/acsami.9b07891"><img src="https://citestamp.com/citestamped/10.1021/acsami.9b07891/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>

[![CiteStamped reference-health badge](https://citestamp.com/citestamped/10.1021/acsami.9b07891/badge.svg)](https://citestamp.com/citestamped/10.1021/acsami.9b07891)