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P-type Doping in Large-Area Monolayer MoS<sub>2</sub> by Chemical Vapor Deposition
65/65 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 65 checked references that resolve
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Piezophototronic Effect in Single‐Atomic‐Layer MoS<sub>2</sub> for Strain‐Gated Flexible Optoelectronics
resolves10.1038/nature14417
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
resolves10.1002/adfm.201603484
Doping, Contact and Interface Engineering of Two‐Dimensional Layered Transition Metal Dichalcogenides Transistors
resolves10.1002/adma.201903613
Chemically Tuned p‐ and n‐Type WSe<sub>2</sub> Monolayers with High Carrier Mobility for Advanced Electronics
resolves10.1002/adfm.201703448
High Mobility WS<sub>2</sub> Transistors Realized by Multilayer Graphene Electrodes and Application to High Responsivity Flexible Photodetectors
resolves10.1002/adfm.201902483
Pressure‐Tunable Ambipolar Conduction and Hysteresis in Thin Palladium Diselenide Field Effect Transistors
resolves10.1021/nl4033704
Role of the Seeding Promoter in MoS<sub>2</sub> Growth by Chemical Vapor Deposition
resolves10.1016/j.jlumin.2019.05.051
Photoluminescence enhancement by stacking bi-layer MoS2 without interlayer coupling
resolves10.1088/0957-4484/27/50/505204
Surface charge transfer doping of monolayer molybdenum disulfide by black phosphorus quantum dots
resolves10.1002/adom.201801744
Strategies for Air‐Stable and Tunable Monolayer MoS<sub>2</sub>‐Based Hybrid Photodetectors with High Performance by Regulating the Fully Inorganic Trihalide Perovskite Nanocrystals
resolves10.1088/0957-4484/27/18/185701
Theoretical analysis of the combined effects of sulfur vacancies and analyte adsorption on the electronic properties of single-layer MoS<sub>2</sub>
resolves10.1038/ncomms3642
Hopping transport through defect-induced localized states in molybdenum disulphide
resolves10.1021/acsnano.5b05173
Controlled Doping of Vacancy-Containing Few-Layer MoS<sub>2</sub> <i>via</i> Highly Stable Thiol-Based Molecular Chemisorption
resolves10.1038/srep02657
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
resolves10.1021/nl403465v
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS<sub>2</sub> Interfaces
resolves10.1002/adma.201802991
Controllable, Wide‐Ranging n‐Doping and p‐Doping of Monolayer Group 6 Transition‐Metal Disulfides and Diselenides
resolves10.1021/nn506567r
Low Resistance Metal Contacts to MoS<sub>2</sub>Devices with Nickel-Etched-Graphene Electrodes
resolves10.1103/physrevb.91.125304
Native defects in bulk and monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>from first principles
resolves10.1021/acs.jpcc.8b08082
Engineering Defect Transition-Levels through the van der Waals Heterostructure
resolves10.1103/physrevb.99.121201
Origin of
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mi>n</mml:mi></mml:math>
-type conductivity of monolayer
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1002/adma.201404578
Controlled Doping of Large‐Area Trilayer MoS<sub>2</sub> with Molecular Reductants and Oxidants
resolves10.1038/srep21405
Plasma functionalization for cyclic transition between neutral and charged excitons in monolayer MoS2
resolves10.1002/adma.201505154
P‐Type Polar Transition of Chemically Doped Multilayer MoS<sub>2</sub> Transistor
resolves10.1021/nl4011172
Broad-Range Modulation of Light Emission in Two-Dimensional Semiconductors by Molecular Physisorption Gating
resolves10.1021/nl4043505
MoS<sub>2</sub> P-type Transistors and Diodes Enabled by High Work Function MoO<sub><i>x</i></sub> Contacts
resolves10.1038/srep01634
Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
resolves10.1021/acs.nanolett.6b00760
Correction to Manganese Doping of Monolayer MoS<sub>2</sub>: The Substrate Is Critical
resolves10.1002/adma.201601104
Transition‐Metal Substitution Doping in Synthetic Atomically Thin Semiconductors
resolves10.7567/jjap.53.04eh07
Optical and electrical properties of MoS<sub>2</sub> and Fe-doped MoS<sub>2</sub>
resolves10.1002/adma.201601833
2D Layered Materials of Rare‐Earth Er‐Doped MoS<sub>2</sub> with NIR‐to‐NIR Down‐ and Up‐Conversion Photoluminescence
resolves10.1039/c8nr03427c
Direct growth of doping controlled monolayer WSe
<sub>2</sub>
by selenium-phosphorus substitution
resolves10.1088/1361-6528/aadf5a
Two-dimensional plumbum-doped tin diselenide monolayer transistor with high on/off ratio
resolves10.1039/c8nr07070a
Controlled p-type substitutional doping in large-area monolayer WSe
<sub>2</sub>
crystals grown by chemical vapor deposition
resolves10.1103/physrevb.87.195201
Mn-doped monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>: An atomically thin dilute magnetic semiconductor
resolves10.1103/physrevb.87.100401
Prediction of two-dimensional diluted magnetic semiconductors: Doped monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>systems
resolves10.1039/c6nr09495c
p-Type transition-metal doping of large-area MoS
<sub>2</sub>
thin films grown by chemical vapor deposition
resolves10.1021/acs.chemmater.9b00913
Synthesis and Transport Properties of Degenerate P-Type Nb-Doped WS<sub>2</sub> Monolayers
resolves10.1021/acsnano.9b05574
Growth of Nb-Doped Monolayer WS<sub>2</sub> by Liquid-Phase Precursor Mixing
resolves10.1021/acsami.7b02101
Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS<sub>2</sub> Films and Their Homojunction
resolves10.1103/physrevb.78.134104
<i>Ab initio</i>study of bilateral doping within the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>MoS</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mrow><mml:mtext>-NbS</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>system
resolves10.1021/nl503251h
Doping against the Native Propensity of MoS<sub>2</sub>: Degenerate Hole Doping by Cation Substitution
resolves10.1038/s41467-017-02631-9
Reconfiguring crystal and electronic structures of MoS2 by substitutional doping
resolves10.1080/00018736900101307
The transition metal dichalcogenides discussion and interpretation of the observed optical, electrical and structural properties
resolves10.1002/adma.201803665
Edge‐Epitaxial Growth of 2D NbS<sub>2</sub>‐WS<sub>2</sub> Lateral Metal‐Semiconductor Heterostructures
resolves10.1039/c5nr01072a
Low voltage and high ON/OFF ratio field-effect transistors based on CVD MoS
<sub>2</sub>
and ultra high-k gate dielectric PZT
resolves10.1002/smll.201102654
Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate
resolves10.1063/1.4948357
Optical detection of strain and doping inhomogeneities in single layer MoS2
resolves10.1103/physrevb.99.195401
Spectroscopic evaluation of charge-transfer doping and strain in graphene/
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
heterostructures
resolves10.1038/srep18596
Controllable Growth of Large–Size Crystalline MoS2 and Resist-Free Transfer Assisted with a Cu Thin Film
resolves10.1021/acs.nanolett.5b00314
Air Stable Doping and Intrinsic Mobility Enhancement in Monolayer Molybdenum Disulfide by Amorphous Titanium Suboxide Encapsulation
resolves10.1088/2053-1583/aa91a7
Hysteresis in the transfer characteristics of MoS
<sub>2</sub>
transistors
resolves10.1103/physrevb.92.205108
<i>Ab initio</i>
tight-binding Hamiltonian for transition metal dichalcogenides
resolves10.1016/j.comptc.2017.09.005
Adsorption patterns of aromatic amino acids on monolayer MoS 2 and Au-modified MoS 2 surfaces: A first-principles study
resolves10.1103/physrevb.49.14251
<i>Ab initio</i>molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
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