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Hafnium Oxide/Graphene/Hafnium Oxide-Stacked Nanostructures as Resistive Switching Media

63/63 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 63 checked references that resolve

resolves10.1038/ncomms9407

Metal oxide-resistive memory using graphene-edge electrodes

resolves10.3390/mi11040341

Memristive Non-Volatile Memory Based on Graphene Materials

resolves10.1021/acsnano.5b07943

Tuning Ionic Transport in Memristive Devices by Graphene with Engineered Nanopores

resolves10.1016/j.mee.2016.04.009

Graphene-HfO2-based resistive RAM memories

resolves10.1021/nl201358y

Enhanced Transport and Transistor Performance with Oxide Seeded High-κ Gate Dielectrics on Wafer-Scale Epitaxial Graphene

resolves10.1002/admi.201700232

Atomic Layer Deposition for Graphene Device Integration

resolves10.3390/c5030053

Recent Advances in Seeded and Seed-Layer-Free Atomic Layer Deposition of High-K Dielectrics on Graphene for Electronics

resolves10.3390/app10072440

Atomic Layer Deposition of High-k Insulators on Epitaxial Graphene: A Review

resolves10.1038/srep20907

Thickness scaling of atomic-layer-deposited HfO2 films and their application to wafer-scale graphene tunnelling transistors

resolves10.1021/acsomega.8b02836

Graphene Field-Effect Transistors Employing Different Thin Oxide Films: A Comparative Study

resolves10.1002/1521-3862(20020903)8:5<199::AID-CVDE199>3.0.CO;2-U

Atomic Layer Deposition of Hafnium Dioxide Films from Hafnium Tetrakis(ethylmethylamide) and Water

resolves10.1063/1.3492843

Dielectric thickness dependence of carrier mobility in graphene with HfO2 top dielectric

resolves10.1063/1.4950997

Atomic layer deposition of HfO2 on graphene through controlled ion beam treatment

resolves10.1116/1.4828361

HfO2 dielectric film growth directly on graphene by H2O-based atomic layer deposition

resolves10.1039/c4cp04957h

Controlled direct growth of Al 2 O 3 -doped HfO 2 films on graphene by H 2 O-based atomic layer deposition

resolves10.3390/chemengineering2040058

Transfer of Graphene with Protective Oxide Layers

resolves10.1002/cphc.201500434

Atomic Layer Deposition of Hafnium(IV) Oxide on Graphene Oxide: Probing Interfacial Chemistry and Nucleation by using X‐ray Absorption and Photoelectron Spectroscopies

resolves10.1021/acsami.7b09408

Atomic-Layer-Deposition Growth of an Ultrathin HfO2 Film on Graphene

resolves10.1088/1361-6528/aab0fb

Atomic layer deposited high- k dielectric on graphene by functionalization through atmospheric plasma treatment

resolves10.1063/1.1796513

Effect of selected atomic layer deposition parameters on the structure and dielectric properties of hafnium oxide films

resolves10.2478/s11534-010-0040-x

Atomic layer deposition of HfO2 on graphene from HfCl4 and H2O

resolves10.1021/acs.chemmater.5b01226

Nucleation and Growth of the HfO2 Dielectric Layer for Graphene-Based Devices

resolves10.3390/ma13092008

Structural, Optical and Electrical Properties of HfO2 Thin Films Deposited at Low-Temperature Using Plasma-Enhanced Atomic Layer Deposition

resolves10.1063/1.5135623

Enhanced memory characteristics of charge trapping memory by employing graphene oxide quantum dots

resolves10.1149/06614.0039ecst

Graphene Nanoplatelets Embedded in HfO2 for MOS Memory

resolves10.1016/j.tsf.2016.01.024

Effect of substrate-enhanced and inhibited growth on atomic layer deposition and properties of aluminum–titanium oxide films

resolves10.1016/j.surfcoat.2007.05.009

Batch ALD: Characteristics, comparison with single wafer ALD, and examples

resolves10.1149/1.2911530

Novel Batch Titanium Nitride CVD Process for Advanced Metal Electrodes

resolves10.1021/nn203377t

Toward Clean and Crackless Transfer of Graphene

resolves10.1038/srep22858

Correlation of p-doping in CVD Graphene with Substrate Surface Charges

resolves10.1088/0022-3719/3/2/010

Many-electron singularity in X-ray photoemission and X-ray line spectra from metals

resolves10.1103/PhysRevA.63.062702

Vibrational structure and partial rates of resonant Auger decay of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">N</mml:mi><mml:mi/><mml:mn>1</mml:mn><mml:mrow><mml:mrow><mml:mover><mml:mrow><mml:mi>s</mml:mi></mml:mrow><mml:mrow><mml:mo>→</mml:mo></mml:mrow></mml:mover></mml:mrow></mml:mrow><mml:mn>2</mml:mn><mml:mi>π</mml:mi></mml:math>core excitations in nitric oxide

resolves10.1103/PhysRevLett.95.133001

Violation of the Franck-Condon Principle due to Recoil Effects in High Energy Molecular Core-Level Photoionization

resolves10.1116/6.0000390

Structure and behavior of ZrO2-graphene-ZrO2 stacks

resolves10.1088/0953-8984/27/8/083002

Raman characterization of defects and dopants in graphene

resolves10.1038/NNANO.2013.46

Raman spectroscopy as a versatile tool for studying the properties of graphene

resolves10.1063/1.2818692

Raman fingerprint of charged impurities in graphene

resolves10.1038/srep05758

Graphene, a material for high temperature devices – intrinsic carrier density, carrier drift velocity and lattice energy

resolves10.1063/1.4755756

Tuning surface-enhanced Raman scattering from graphene substrates using the electric field effect and chemical doping

resolves10.1007/s00339-020-03935-2

Modulation of electron transfer in Si/SiO2/HfO2/Graphene by the HfO2 thickness

resolves10.1021/nl1029607

Atmospheric Oxygen Binding and Hole Doping in Deformed Graphene on a SiO2 Substrate

resolves10.1021/acs.jpcc.7b01520

Fermi-Level Dependence of the Chemical Functionalization of Graphene with Benzoyl Peroxide

resolves10.1038/s41598-018-21055-z

Chemically induced Fermi level pinning effects of high-k dielectrics on graphene

resolves10.1002/jrs.2485

The effect of vacuum annealing on graphene

resolves10.1021/nl201432g

Quantifying Defects in Graphene via Raman Spectroscopy at Different Excitation Energies

resolves10.1038/NCHEM.1421

Understanding and controlling the substrate effect on graphene electron-transfer chemistry via reactivity imprint lithography

resolves10.1039/C6CP02033J

A comparative study on defect estimation using XPS and Raman spectroscopy in few layer nanographitic structures

resolves10.1002/pssb.201000247

Measuring disorder in graphene with the G and D bands

resolves10.1038/ncomms9429

Raman spectroscopy as probe of nanometre-scale strain variations in graphene

resolves10.1063/1.2770796

Diffusion of nitrogen molecules in amorphous SiO2

resolves10.1118/1.4892381

A Raman cell based on hollow core photonic crystal fiber for human breath analysis

resolves10.1002/sia.6010

XPS investigations of graphene surface cleaning using H 2 ‐ and Cl 2 ‐based inductively coupled plasma

resolves10.1016/j.carbon.2018.11.012

Accurate chemical analysis of oxygenated graphene-based materials using X-ray photoelectron spectroscopy

resolves10.1021/la052922r

Carbon 1s X-ray Photoemission Line Shape Analysis of Highly Oriented Pyrolytic Graphite: The Influence of Structural Damage on Peak Asymmetry

resolves10.1016/j.carbon.2004.03.005

XPS photoemission in carbonaceous materials: A “defect” peak beside the graphitic asymmetric peak

resolves10.1063/1.4931370

Dry efficient cleaning of poly-methyl-methacrylate residues from graphene with high-density H2 and H2-N2 plasmas

resolves10.1088/0953-8984/20/18/184025

In situx-ray photoelectron spectroscopy studies of water on metals and oxides at ambient conditions

resolves10.1016/j.elspec.2006.12.070

XPS and AFM investigation of hafnium dioxide thin films prepared by atomic layer deposition on silicon

resolves10.1016/j.carbon.2017.01.072

Direct graphene growth on transitional metal with solid carbon source and its converting into graphene/transitional metal oxide heterostructure

resolves10.1002/cvde.200706596

Growth of Hafnium Dioxide Thin Films by MOCVD Using a New Series of Cyclopentadienyl Hafnium Compounds

resolves10.1002/cphc.201300411

Calibration of the X‐Ray Photoelectron Spectroscopy Binding Energy Scale for the Characterization of Heterogeneous Catalysts: Is Everything Really under Control?

resolves10.1016/j.pmatsci.2019.100591

X-ray photoelectron spectroscopy: Towards reliable binding energy referencing

resolves10.1103/PhysRevLett.123.026805

Charge Transfer and Built-in Electric Fields between a Crystalline Oxide and Silicon

The 2 references without a DOI — listed, not checked

no DOI — not checkedFairley, N. CasaXPS: Processing Software for XPS, AES, SIMS and More; Casa Software Ltd., 2018 [online] http://www.casaxps.com/.

no DOI — not checkedNIST X-ray Photoelectron Spectroscopy Database, NIST Standard Reference Database Number 20

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