Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 32 checked references that resolve
resolves10.1021/acsnano.6b01839Enhancing Photoresponsivity of Self-Aligned MoS<sub>2</sub> Field-Effect Transistors by Piezo-Phototronic Effect from GaN Nanowires
resolves10.1038/s41598-017-04925-wLateral multilayer/monolayer MoS2 heterojunction for high performance photodetector applications
resolves10.1039/C5RA05434FMulti-layered MoS
<sub>2</sub>
phototransistors as high performance photovoltaic cells and self-powered photodetectors
resolves10.1038/srep05442High-Performance Few-layer Mo-doped ReSe2 Nanosheet Photodetectors
resolves10.1038/srep14646Optical Limiting and Theoretical Modelling of Layered Transition Metal Dichalcogenide Nanosheets
resolves10.1002/adma.201503340Ultrasensitive and Broadband MoS<sub>2</sub> Photodetector Driven by Ferroelectrics
resolves10.1021/jz401199xElucidating the Photoresponse of Ultrathin MoS<sub>2</sub> Field-Effect Transistors by Scanning Photocurrent Microscopy
resolves10.1021/acsami.7b16177Evaluation of Transport Parameters in MoS<sub>2</sub>/Graphene Junction Devices Fabricated by Chemical Vapor Deposition
resolves10.1021/acsami.9b18577Schottky Barrier Variable Graphene/Multilayer-MoS<sub>2</sub> Heterojunction Transistor Used to Overcome Short Channel Effects
resolves10.1021/nl502339qMechanisms of Photoconductivity in Atomically Thin MoS<sub>2</sub>
resolves10.1038/srep13743Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS2 Heterostructured Transistors
resolves10.1021/acsnano.9b03993Ultrahigh Gauge Factor in Graphene/MoS<sub>2</sub> Heterojunction Field Effect Transistor with Variable Schottky Barrier
resolves10.1364/AO.58.001319Channel-length-dependent performance of photosensitive organic field-effect transistors
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