Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 36 checked references that resolve
resolves10.1038/nchem.1589The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
resolves10.1002/adma.201602757High Mobility MoS<sub>2</sub> Transistor with Low Schottky Barrier Contact by Using Atomic Thick h‐BN as a Tunneling Layer
resolves10.1021/acs.nanolett.9b04645Ultrasensitive Plasmon-Free Surface-Enhanced Raman Spectroscopy with Femtomolar Detection Limit from 2D van der Waals Heterostructure
resolves10.1016/j.nanoen.2019.06.042In-situ coalesced vacancies on MoSe2 mimicking noble metal: Unprecedented Tafel reaction in hydrogen evolution
resolves10.1038/ncomms7298Bandgap tunability at single-layer molybdenum disulphide grain boundaries
resolves10.1002/smll.201804133Site‐Selective and van der Waals Epitaxial Growth of Rhenium Disulfide on Graphene
resolves10.1039/C6NR07240BA homogeneous atomic layer MoS
<sub>2(1−x)</sub>
Se
<sub>2x</sub>
alloy prepared by low-pressure chemical vapor deposition, and its properties
resolves10.1038/nmat3633Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
resolves10.1021/acsnano.0c00296Vertical Chemical Vapor Deposition Growth of Highly Uniform 2D Transition Metal Dichalcogenides
resolves10.1021/nl2043612Growth of Large-Area and Highly Crystalline MoS<sub>2</sub> Thin Layers on Insulating Substrates
resolves10.1002/adfm.201402519Wafer Scale Synthesis and High Resolution Structural Characterization of Atomically Thin MoS<sub>2</sub> Layers
resolves10.1038/s41598-020-58694-0Solution-Based Synthesis of Few-Layer WS2 Large Area Continuous Films for Electronic Applications
resolves10.1021/acsami.7b12151Synthesis of Large-Area Tungsten Disulfide Films on Pre-Reduced Tungsten Suboxide Substrates
resolves10.1002/adma.201901405Atomic‐Level Customization of 4 in. Transition Metal Dichalcogenide Multilayer Alloys for Industrial Applications
resolves10.1002/adma.201600606Wafer‐Scale, Homogeneous MoS<sub>2</sub> Layers on Plastic Substrates for Flexible Visible‐Light Photodetectors
resolves10.1021/acs.chemmater.7b01605Highly Scalable Synthesis of MoS<sub>2</sub> Thin Films with Precise Thickness Control via Polymer-Assisted Deposition
resolves10.1021/nl302584wThermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe<sub>2</sub> versus MoS<sub>2</sub>
resolves10.1364/OE.21.004908Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
resolves10.1021/acsnano.5b06960Photoluminescence Enhancement and Structure Repairing of Monolayer MoSe<sub>2</sub>by Hydrohalic Acid Treatment
resolves10.1021/nn4046002Nonblinking, Intense Two-Dimensional Light Emitter: Monolayer WS<sub>2</sub> Triangles
resolves10.1038/ncomms2498Electrical control of neutral and charged excitons in a monolayer semiconductor
resolves10.1038/s41467-019-11497-yMany-body simulation of two-dimensional electronic spectroscopy of excitons and trions in monolayer transition metal dichalcogenides
resolves10.1021/nl4032296Band Gap Engineering and Layer-by-Layer Mapping of Selenium-Doped Molybdenum Disulfide
resolves10.1021/nn501175kChemical Vapor Deposition Growth of Crystalline Monolayer MoSe<sub>2</sub>
resolves10.1021/nl500515qTuning Interlayer Coupling in Large-Area Heterostructures with CVD-Grown MoS<sub>2</sub> and WS<sub>2</sub> Monolayers
resolves10.1021/acsnano.7b07755Multilayer Graphene–WSe<sub>2</sub> Heterostructures for WSe<sub>2</sub> Transistors
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