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In-Plane Optical Anisotropy of Layered Gallium Telluride
54/54 checkable references clean · checked 2026-08-30
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 54 checked references that resolve
resolves10.1002/pssa.2211510128
Anisotropy of the refractive index and absorption coefficient in the layer plane of gallium telluride single crystals
resolves10.1063/1.4926508
Temperature dependence of Raman shifts in layered ReSe2 and SnSe2 semiconductor nanosheets
resolves10.1021/acs.nanolett.5b00910
In-Plane Anisotropy in Mono- and Few-Layer ReS
<sub>2</sub>
Probed by Raman Spectroscopy and Scanning Transmission Electron Microscopy
resolves10.1103/PhysRevB.90.075434
Tunable optical properties of multilayer black phosphorus thin films
resolves10.1103/PhysRevB.58.16130
Absorption-edge anisotropy in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">ReS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">ReSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>layered semiconductors
resolves10.1016/S0925-8388(00)01332-3
In-plane anisotropy of the optical and electrical properties of ReS2 and ReSe2 layered crystals
resolves10.1103/PhysRevB.92.115202
First-principles study of anisotropic thermoelectric transport properties of IV-VI semiconductor compounds SnSe and SnS
resolves10.1038/ncomms5458
Rediscovering black phosphorus as an anisotropic layered material for optoelectronics and electronics
resolves10.1038/ncomms9572
Anisotropic in-plane thermal conductivity observed in few-layer black phosphorus
resolves10.1038/ncomms9573
Anisotropic in-plane thermal conductivity of black phosphorus nanoribbons at temperatures higher than 100 K
resolves10.1021/acs.nanolett.5b04540
Anisotropic Electron-Photon and Electron-Phonon Interactions in Black Phosphorus
resolves10.1038/ncomms7991
Integrated digital inverters based on two-dimensional anisotropic ReS2 field-effect transistors
resolves10.1103/PhysRevB.87.195403
Band structure and optical transitions in atomic layers of hexagonal gallium chalcogenides
resolves10.1007/s12274-014-0430-2
Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap
resolves10.1103/PhysRevB.63.235321
Photoconductivity, low-temperature conductivity, and magnetoresistance studies on the layered semiconductor GaTe
resolves10.1103/PhysRevB.65.115201
Angle-resolved photoemission study and first-principles calculation of the electronic structure of GaTe
resolves10.1103/PhysRevB.64.035210
Excitons and band structure of highly anisotropic GaTe single crystals
resolves10.1002/adma.201601151
Bandgap Restructuring of the Layered Semiconductor Gallium Telluride in Air
resolves10.1016/j.cplett.2016.03.045
Electronic structure and properties of layered gallium telluride
resolves10.1063/1.4941998
Second and third harmonic generation in few-layer gallium telluride characterized by multiphoton microscopy
resolves10.1039/C6CP01963C
Thickness-induced structural phase transformation of layered gallium telluride
resolves10.1063/1.2711720
Development of Front Surface, Spectral Control Filters with Greater Temperature Stability for Thermophotovoltaic Energy Conversion
resolves10.1016/0038-1098(95)00608-7
Growth, characterisation and electrical anisotropy in layered chalcogenides GaTe and InTe
resolves10.1107/S0365110X64000019
The crystal structures of semiconductors and a general valence rule
resolves10.1103/PhysRevB.91.205415
Double resonance Raman modes in monolayer and few-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">MoTe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevB.84.035433
Theory of double-resonant Raman spectra in graphene: Intensity and line shape of defect-induced and two-phonon bands
resolves10.1103/PhysRevB.16.1648
Splittings and correlations between the long-wavelength optical phonons in the layer compounds GaSe, GaTe, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi mathvariant="normal">Ga</mml:mi><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mo>−</mml:mo><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Te</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1002/ange.201410108
Identifying the Crystalline Orientation of Black Phosphorus Using Angle‐Resolved Polarized Raman Spectroscopy
resolves10.1002/smll.201600295
Birefringence‐Directed Raman Selection Rules in 2D Black Phosphorus Crystals
resolves10.1038/ncomms5475
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
resolves10.1021/nn3025173
Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates
resolves10.1103/PhysRevB.80.125422
Interference effect on Raman spectrum of graphene on
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
<mml:mrow>
<mml:msub>
<mml:mrow>
<mml:mtext>SiO</mml:mtext>
</mml:mrow>
<mml:mn>2</mml:mn>
</mml:msub>
<mml:mo>/</mml:mo>
<mml:mtext>Si</mml:mtext>
</mml:mrow>
</mml:math>
resolves10.1007/s12274-015-0865-0
Interlayer interactions in anisotropic atomically thin rhenium diselenide
resolves10.1021/acs.nanolett.5b04925
Coupling and Stacking Order of ReS<sub>2</sub> Atomic Layers Revealed by Ultralow-Frequency Raman Spectroscopy
resolves10.1088/0953-8984/21/39/395502
QUANTUM ESPRESSO: a modular and open-source software project for quantum simulations of materials
resolves10.1103/PhysRevB.58.3641
Relativistic separable dual-space Gaussian pseudopotentials from H to Rn
resolves10.1103/RevModPhys.73.515
Phonons and related crystal properties from density-functional perturbation theory
resolves10.1103/PhysRevLett.90.036401
First-Principles Calculation of Vibrational Raman Spectra in Large Systems: Signature of Small Rings in Crystalline<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
The 2 references without a DOI — listed, not checked
no DOI — not checkedModern Quantum Mechanics
no DOI — not checkedref54/cit54
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