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Weakly Trapped, Charged, and Free Excitons in Single-Layer MoS<sub>2</sub> in the Presence of Defects, Strain, and Charged Impurities
77/77 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 77 checked references that resolve
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<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
<mml:msub>
<mml:mi>MoS</mml:mi>
<mml:mn>2</mml:mn>
</mml:msub>
</mml:math>
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Surface Recombination Limited Lifetimes of Photoexcited Carriers in Few-Layer Transition Metal Dichalcogenide MoS<sub>2</sub>
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Radiatively Limited Dephasing and Exciton Dynamics in MoSe<sub>2</sub> Monolayers Revealed with Four-Wave Mixing Microscopy
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Possible doping strategies for MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>monolayers: An<i>ab initio</i>study
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Effect of sulphur vacancy on geometric and electronic structure of MoS2 induced by molecular hydrogen treatment at room temperature
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Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
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Hopping transport through defect-induced localized states in molybdenum disulphide
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Impurities and Electronic Property Variations of Natural MoS<sub>2</sub>Crystal Surfaces
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Deep-to-shallow level transition of Re and Nb dopants in monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>with dielectric environments
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Native defects in bulk and monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>from first principles
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Theoretical characterisation of point defects on a MoS<sub>2</sub>monolayer by scanning tunnelling microscopy
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Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
resolves10.1039/C4NR06331G
Thickness-dependent mobility in two-dimensional MoS
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transistors
resolves10.1063/1.4803920
Band-like transport in high mobility unencapsulated single-layer MoS2 transistors
resolves10.1103/PhysRevB.85.115317
Phonon-limited mobility in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-type single-layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>from first principles
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Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping
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Interlayer Breathing and Shear Modes in Few-Trilayer MoS<sub>2</sub> and WSe<sub>2</sub>
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Symmetry-dependent phonon renormalization in monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>transistor
resolves10.1063/1.4948357
Optical detection of strain and doping inhomogeneities in single layer MoS2
resolves10.1186/1556-276X-9-676
Electronic structures of defects and magnetic impurities in MoS2 monolayers
resolves10.1063/1.4789365
High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
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Electronic Properties of Graphene Encapsulated with Different Two-Dimensional Atomic Crystals
resolves10.1007/s12274-014-0424-0
The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2
resolves10.1021/nn500532f
Strong Photoluminescence Enhancement of MoS<sub>2</sub> through Defect Engineering and Oxygen Bonding
resolves10.1021/acs.nanolett.5b02719
Efficient Excitonic Photoluminescence in Direct and Indirect Band Gap Monolayer MoS<sub>2</sub>
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Optical Coherence in Atomic-Monolayer Transition-Metal Dichalcogenides Limited by Electron-Phonon Interactions
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Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates
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First‐principles study of the electronic and magnetic properties of 4‐8 line‐defect‐embedded BN sheets decorated with transition metals
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Defect-Induced Photoluminescence in Monolayer Semiconducting Transition Metal Dichalcogenides
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Scanning Tunneling Microscope Observation of the Metal-Adsorbed Layered Semiconductor Surfaces
resolves10.1016/S0039-6028(01)00904-9
Scanning tunneling microscope images of locally modulated structures in layered materials, MoS2(0 0 0 1) and MoSe2(0 0 0 1), induced by impurity atoms
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Scanning tunneling microscopy investigation of nanostructures produced by Ar+ and He+ bombardment of MoS2 surfaces
resolves10.1038/srep29726
The intrinsic defect structure of exfoliated MoS2 single layers revealed by Scanning Tunneling Microscopy
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Atomic-scale structures and electronic states of defects on Ar+-ion irradiated MoS2
resolves10.1021/acs.nanolett.6b02788
Electron Excess Doping and Effective Schottky Barrier Reduction on the MoS<sub>2</sub>/<i>h</i>-BN Heterostructure
resolves10.1021/acsami.6b15072
Understanding Coulomb Scattering Mechanism in Monolayer MoS<sub>2</sub>Channel in the Presence of<i>h</i>-BN Buffer Layer
resolves10.1038/nmat1134
Direct-bandgap properties and evidence for ultraviolet lasing of hexagonal boron nitride single crystal
resolves10.1103/PhysRevLett.113.156804
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>: Choice Substrate for Accessing and Tuning the Electronic Properties of Graphene
resolves10.1103/PhysRevLett.112.216804
Coherent Electronic Coupling in Atomically Thin<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>MoSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevB.76.041403
Electron states of mono- and bilayer graphene on SiC probed by scanning-tunneling microscopy
resolves10.1063/1.2432410
<scp>WSXM</scp>: A software for scanning probe microscopy and a tool for nanotechnology
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From ultrasoft pseudopotentials to the projector augmented-wave method
resolves10.1002/pssb.201147259
Advances and applications in the F<scp>IREBALL</scp><i>ab initio</i> tight‐binding molecular‐dynamics formalism
resolves10.1103/PhysRevB.71.235101
Multicenter approach to the exchange-correlation interactions in<i>ab initio</i>tight-binding methods
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Optimized atomic-like orbitals for first-principles tight-binding molecular dynamics
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Theoretical study of carbon-based tips for scanning tunnelling microscopy
The 2 references without a DOI — listed, not checked
no DOI — not checkedPoellmann, C.; Steinleitner, P.; Leierseder, U.; Nagler, P.; Plechinger, G.; Porer, M.; Bratschitsch, R.; Schüller, C.; Korn, T.; Huber, R.Direct Observation of Internal Quantum Transitions and Femtosecond Radiative Decay of Excitons in Monolayer WSe2. arXiv:1605.01164.
no DOI — not checkedref78/cit78
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