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Palladium Diselenide Long-Wavelength Infrared Photodetector with High Sensitivity and Stability
55/55 checkable references clean · checked 2026-07-24
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 55 checked references that resolve
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Probing and Manipulating the Interfacial Defects of InGaAs Dual‐Layer Metal Oxides at the Atomic Scale
resolves10.1038/nnano.2014.31
Graphene photodetectors with ultra-broadband and high responsivity at room temperature
resolves10.1038/s41566-018-0239-8
Polarization-resolved black phosphorus/molybdenum disulfide mid-wave infrared photodiodes with high detectivity at room temperature
resolves10.1103/PhysRevB.89.235319
Layer-controlled band gap and anisotropic excitons in few-layer black phosphorus
resolves10.1038/ncomms5475
High-mobility transport anisotropy and linear dichroism in few-layer black phosphorus
resolves10.1002/adma.201501758
Black Arsenic–Phosphorus: Layered Anisotropic Infrared Semiconductors with Highly Tunable Compositions and Properties
resolves10.1126/sciadv.1700589
Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus
resolves10.1021/acsnano.7b07028
Mid-Wave Infrared Photoconductors Based on Black Phosphorus-Arsenic Alloys
resolves10.1038/s41467-018-03935-0
Atomically thin noble metal dichalcogenide: a broadband mid-infrared semiconductor
resolves10.1021/acs.nanolett.7b05000
Wide Spectral Photoresponse of Layered Platinum Diselenide-Based Photodiodes
resolves10.1038/nmat4299
Photooxidation and quantum confinement effects in exfoliated black phosphorus
resolves10.1021/jacs.7b04865
PdSe<sub>2</sub>: Pentagonal Two-Dimensional Layers with High Air Stability for Electronics
resolves10.1002/adma.201602969
High Mobility 2D Palladium Diselenide Field‐Effect Transistors with Tunable Ambipolar Characteristics
resolves10.1002/adma.201504572
Extraordinarily Strong Interlayer Interaction in 2D Layered PtS<sub>2</sub>
resolves10.1002/anie.201309280
Two Dimensional Materials Beyond MoS<sub>2</sub>: Noble‐Transition‐Metal Dichalcogenides
resolves10.1007/s12274-014-0532-x
Two-dimensional semiconductors with possible high room temperature mobility
resolves10.1039/C5TC01345C
Not your familiar two dimensional transition metal disulfide: structural and electronic properties of the PdS
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resolves10.1002/adma.201604230
High‐Electron‐Mobility and Air‐Stable 2D Layered PtSe<sub>2</sub> FETs
resolves10.1038/srep39995
Strain-Modulated Electronic Structure and Infrared Light Adsorption in Palladium Diselenide Monolayer
resolves10.1021/ic0352396
Experimental and Theoretical Investigation on the Relative Stability of the PdS<sub>2</sub>- and Pyrite-Type Structures of PdSe<sub>2</sub>
resolves10.1021/nl303583v
High Performance Multilayer MoS<sub>2</sub> Transistors with Scandium Contacts
resolves10.1021/acs.jpcc.6b04473
Contact Metal–MoS<sub>2</sub> Interfacial Reactions and Potential Implications on MoS<sub>2</sub>-Based Device Performance
resolves10.1021/nn5052376
Few-Layer Black Phosphorus Field-Effect Transistors with Reduced Current Fluctuation
resolves10.1103/PhysRevB.94.035125
Band alignment of two-dimensional semiconductors for designing heterostructures with momentum space matching
resolves10.1126/sciadv.1601832
Determination of band offsets, hybridization, and exciton binding in 2D semiconductor heterostructures
resolves10.1038/ncomms7242
Observation of long-lived interlayer excitons in monolayer MoSe2–WSe2 heterostructures
resolves10.1103/PhysRevB.54.11169
Efficient iterative schemes for<i>ab initio</i>total-energy calculations using a plane-wave basis set
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Corrected atomic limit in the local-density approximation and the electronic structure of<i>d</i>impurities in Rb
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