Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 58 checked references that resolve
resolves10.1038/nature14417High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
resolves10.1021/nl4046922Transport Properties of Monolayer MoS<sub>2</sub> Grown by Chemical Vapor Deposition
resolves10.1038/nnano.2014.222Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions
resolves10.1038/nmat4091Vertical and in-plane heterostructures from WS2/MoS2 monolayers
resolves10.1038/nmat4064Lateral heterojunctions within monolayer MoSe2–WSe2 semiconductors
resolves10.1126/science.aab4097Epitaxial growth of a monolayer WSe
<sub>2</sub>
-MoS
<sub>2</sub>
lateral p-n junction with an atomically sharp interface
resolves10.1126/science.aan6814Robust epitaxial growth of two-dimensional heterostructures, multiheterostructures, and superlattices
resolves10.1038/nature25155One-pot growth of two-dimensional lateral heterostructures via sequential edge-epitaxy
resolves10.1126/science.aao5360Coherent, atomically thin transition-metal dichalcogenide superlattices with engineered strain
resolves10.1039/C8CS00206AEmerging photonic architectures in two-dimensional opto-electronics
resolves10.1021/acsnano.8b01263Utilizing Interlayer Excitons in Bilayer WS<sub>2</sub> for Increased Photovoltaic Response in Ultrathin Graphene Vertical Cross-Bar Photodetecting Tunneling Transistors
resolves10.1038/ncomms2018High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
resolves10.1073/pnas.1406960111Anomalously robust valley polarization and valley coherence in bilayer WS
<sub>2</sub>
resolves10.1038/nphys2524Electrical tuning of valley magnetic moment through symmetry control in bilayer MoS2
resolves10.1002/adfm.201504408High Responsivity Phototransistors Based on Few‐Layer ReS<sub>2</sub> for Weak Signal Detection
resolves10.1021/acsami.5b02264High Photoresponsivity and Short Photoresponse Times in Few-Layered WSe<sub>2</sub> Transistors
resolves10.1088/0957-4484/27/11/115705Spatially resolved optical absorption spectroscopy of single- and few-layer MoS<sub>2</sub>by hyperspectral imaging
resolves10.1038/srep01755Identification of individual and few layers of WS2 using Raman Spectroscopy
resolves10.1021/nn1003937Anomalous Lattice Vibrations of Single- and Few-Layer MoS<sub>2</sub>
resolves10.1038/ncomms14670Intervalley scattering by acoustic phonons in two-dimensional MoS2 revealed by double-resonance Raman spectroscopy
resolves10.1103/PhysRevB.85.161403Symmetry-dependent phonon renormalization in monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>transistor
resolves10.1103/PhysRevB.91.195411Effect of disorder on Raman scattering of single-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:mrow><mml:mi>Mo</mml:mi><mml:msub><mml:mi mathvariant="normal">S</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>
resolves10.1021/nl403270kOrigin of Indirect Optical Transitions in Few-Layer MoS<sub>2</sub>, WS<sub>2</sub>, and WSe<sub>2</sub>
resolves10.1021/nl3026357Extraordinary Room-Temperature Photoluminescence in Triangular WS<sub>2</sub> Monolayers
resolves10.1103/PhysRevLett.105.136805Atomically Thin
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
<mml:msub>
<mml:mi>MoS</mml:mi>
<mml:mn>2</mml:mn>
</mml:msub>
</mml:math>
: A New Direct-Gap Semiconductor
resolves10.1021/acsnano.5b07214Biexciton Emission from Edges and Grain Boundaries of Triangular WS<sub>2</sub> Monolayers
resolves10.1103/PhysRevB.69.134111Phase transitions between polytypes and intralayer superstructures in transition metal dichalcogenides
resolves10.1021/nl504311pInvestigation of Band-Offsets at Monolayer–Multilayer MoS<sub>2</sub> Junctions by Scanning Photocurrent Microscopy
resolves10.1103/PhysRevB.87.165409Anomalous Raman spectra and thickness-dependent electronic properties of WSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1364/OE.21.004908Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
resolves10.1002/adfm.201806874Controlled Vapor Growth and Nonlinear Optical Applications of Large‐Area 3R Phase WS<sub>2</sub> and WSe<sub>2</sub> Atomic Layers
resolves10.1021/acsnano.5b07916Generalized Mechanistic Model for the Chemical Vapor Deposition of 2D Transition Metal Dichalcogenide Monolayers
resolves10.1021/cm5025662Shape Evolution of Monolayer MoS<sub>2</sub> Crystals Grown by Chemical Vapor Deposition
resolves10.1021/jz401199xElucidating the Photoresponse of Ultrathin MoS<sub>2</sub> Field-Effect Transistors by Scanning Photocurrent Microscopy
resolves10.1021/acs.nanolett.6b02443Lateral Versus Vertical Growth of Two-Dimensional Layered Transition-Metal Dichalcogenides: Thermodynamic Insight into MoS<sub>2</sub>
resolves10.1021/acsnano.7b07604Toward a Mechanistic Understanding of Vertical Growth of van der Waals Stacked 2D Materials: A Multiscale Model and Experiments
resolves10.1038/s41598-017-02919-2A kinetic Monte Carlo simulation method of van der Waals epitaxy for atomistic nucleation-growth processes of transition metal dichalcogenides
resolves10.1364/OME.9.001620Probing nano-heterogeneity and aging effects in lateral 2D heterostructures using tip-enhanced photoluminescence
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