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Low-Temperature Al<sub>2</sub>O<sub>3</sub> Atomic Layer Deposition

https://doi.org/10.1021/cm0304546
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21/21 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 21 checked references that resolve
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Inorganic coatings on polymers
resolves10.1021/jp990737e
SiO<sub>x</sub> Gas Barrier Coatings on Polymer Substrates:  Morphology and Gas Transport Considerations
resolves10.1063/1.112532
Reliability and degradation of organic light emitting devices
resolves10.1063/1.1514831
Organic light-emitting devices with extended operating lifetimes on plastic substrates
resolves10.1126/science.278.5345.1934
Growth of SiO <sub>2</sub> at Room Temperature with the Use of Catalyzed Sequential Half-Reactions
resolves10.1016/S0039-6028(99)01119-X
Atomic layer deposition of SiO2 at room temperature using NH3-catalyzed sequential surface reactions
resolves10.1063/1.120509
Low-temperature, chemically driven atomic-layer epitaxy: <i>In situ</i> monitored growth of CdS/ZnSe(100)
resolves10.1016/S0040-6090(96)08934-1
Al3O3 thin film growth on Si(100) using binary reaction sequence chemistry
resolves10.1016/0039-6028(95)90033-0
Surface chemistry of Al2O3 deposition using Al(CH3)3 and H2O in a binary reaction sequence
resolves10.1016/S0040-6090(02)00438-8
Electrical characterization of thin Al2O3 films grown by atomic layer deposition on silicon and various metal substrates
resolves10.1116/1.580895
Dependence of atomic layer-deposited Al2O3 films characteristics on growth temperature and Al precursors of Al(CH3)3 and AlCl3
resolves10.1016/S0040-6090(00)00890-7
Effect of water dose on the atomic layer deposition rate of oxide thin films
resolves10.1116/1.580536
Atomic layer epitaxy growth of aluminum oxide thin films from a novel Al(CH3)2Cl precursor and H2O
resolves10.1143/JJAP.30.L1139
Low-Temperature Growth of Thin Films of Al<sub>2</sub>O<sub>3</sub> by Sequential Surface Chemical Reaction of trimethylaluminum and H<sub>2</sub>O<sub>2</sub>
resolves10.1016/0169-4332(94)90279-8
Electrical properties of Si—Al2O3 structures grown by ML-ALE
resolves10.1063/1.1490410
Viscous flow reactor with quartz crystal microbalance for thin film growth by atomic layer deposition
resolves10.1016/S0040-6090(02)00427-3
ZnO/Al2O3 nanolaminates fabricated by atomic layer deposition: growth and surface roughness measurements
resolves10.1016/0040-6090(93)90173-M
Layered tantalum-aluminum oxide films deposited by atomic layer epitaxy
resolves10.1143/JJAP.32.6137
Comparative Study of Al<sub>2</sub>O<sub>3</sub> Optical Crystalline Thin Films Grown by Vapor Combinations of Al(CH<sub>3</sub>)<sub>3</sub>/N<sub>2</sub>O and Al(CH<sub>3</sub>)<sub>3</sub>/H<sub>2</sub>O<sub>2</sub>
resolves10.1126/science.288.5464.319
Atomic Layer Deposition of Oxide Thin Films with Metal Alkoxides as Oxygen Sources
resolves10.1016/0257-8972(95)02420-4
Oxygen diffusion barrier properties of transparent oxide coatings on polymeric substrates
The 3 references without a DOI — listed, not checked
no DOI — not checkedHandbook of Thin Film Materials
no DOI — not checkedAmerican Institute of Physics Handbook
no DOI — not checkedCRC Handbook of Chemistry and Physics
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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