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Oxysulfide Sm<sub>2</sub>Ti<sub>2</sub>S<sub>2</sub>O<sub>5</sub> as a Stable Photocatalyst for Water Oxidation and Reduction under Visible Light Irradiation (λ ≤ 650 nm)
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resolves10.1016/0021-9517(86)90143-0
Mechanism of photocatalytic decomposition of water into H2 and O2 over NiO$z.sbnd;SrTiO3
resolves10.1021/cm960612b
Photocatalytic Decomposition of Water on Spontaneously Hydrated Layered Perovskites
resolves10.1016/0021-9517(88)90066-8
Photocatalytic decomposition of water over NiO$z.sbnd;K4Nb6O17 catalyst
resolves10.1016/S0009-2614(00)01220-3
Effect of lanthanide-doping into NaTaO3 photocatalysts for efficient water splitting
resolves10.1021/ja00451a001
Study of n-type semiconducting cadmium chalcogenide-based photoelectrochemical cells employing polychalcogenide electrolytes
resolves10.1107/S0108768193012017
Electron-density and electrostatic potential distributions in nucleoside analogs. I. An experimental study of 3'-<i>O</i>-acetyl-2'-deoxy-5-methoxymethyluridine
resolves10.1039/a809737b
Ln2Ti2S2O5 (Ln = Nd, Pr, Sm): a novel series of defective Ruddlesden–Popper phases
resolves10.1103/RevModPhys.64.1045
Iterative minimization techniques for<i>ab initio</i>total-energy calculations: molecular dynamics and conjugate gradients
resolves10.1103/PhysRevB.41.7892
Soft self-consistent pseudopotentials in a generalized eigenvalue formalism
resolves10.1021/j100565a004
Correlation of photocurrent-voltage curves with flat-band potential for stable photoelectrodes for the photoelectrolysis of water
resolves10.1006/jssc.1996.0333
Energy Positions of Oxide Semiconductors and Photocatalysis with Iron Complex Oxides
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no DOI — not checkedja0269643b00011/ja0269643b00011_1
no DOI — not checkedThe slope of M−S plots ((1/C2)/V) is expressed by the following equation:15(1/C2)/V = 2/(qεrε0ND), whereq, εr, ε0, andNDrepresent the elementary electric charge (1.60 × 10-19C), relative permittivity, vacuum permittivity (8.85 × 10-14F cm-1), and concentration of donor impurities in bulk, respectively. εrwas estimated to be 23 by an impedance analyzer. Because (1/C2)/V increased from 2.5 × 1013to 4.0 × 1013cm4V-1with increasing measurement frequency (1∼20 kHz) as mentioned above,NDwas estimated to be ∼1.5 × 1017−2.5 × 1017cm-3. The difference between the conduction band and Fermi levels (ΔE=EC−EF) is given by the following equation: n0=Ncexp(ΔE/kT),Nc= 2.5 × 1019(mC/m0)3/2(T/300)3/2. As a first approximation,n0(total concentration of donor impurities in bulk and on surface) is equal toND.mCandm0are the effective mass of the electron in the conduction band and the effective mass of the electron (9.11 × 1031kg), respectively. In the band structure analysis for metal oxides such as TiO2(εr= 173,ND= 3 × 1020cm-3), SnO2(εr= 23.4,ND= 3 × 1018cm-3), KTaO3(εr= 243,ND= 1 × 1018cm-3), and KTa0.77Nb0.23O3(εr= 243,ND= 2 × 1017cm-3),mC/m0can be approximated as 1.0. In the case of GaN (εr= 7,ND= 6 × 1017cm-3),mC/m0has been estimated to be 0.2. It is difficult to determine a correctmCof Sm2Ti2S2O5because prepared Sm2Ti2S2O5is polycrystal. However, assuming that mC/m0is 0.2∼1.0 in Sm2Ti2S2O5which has high electron density and low resistance, we can estimate ΔEto be ∼0−0.1 eV.
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