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Impact of Oxygen Vacancy Occupancy on Charge Carrier Dynamics in BiVO<sub>4</sub> Photoanodes

https://doi.org/10.1021/jacs.9b09056
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 52 checked references that resolve
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Doping properties of monoclinic BiVO<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow/><mml:mrow><mml:mn>4</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>studied by first-principles density-functional theory
resolves10.1039/C6EE03677E
Near-complete suppression of surface losses and total internal quantum efficiency in BiVO <sub>4</sub> photoanodes
resolves10.1021/ja405550k
Combined Charge Carrier Transport and Photoelectrochemical Characterization of BiVO<sub>4</sub> Single Crystals: Intrinsic Behavior of a Complex Metal Oxide
resolves10.1063/1.4905786
Anisotropic small-polaron hopping in W:BiVO4 single crystals
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The Role of Driving Energy and Delocalized States for Charge Separation in Organic Semiconductors
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Intraband relaxation in CdSe quantum dots
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Dynamics of photogenerated holes in surface modified α-Fe <sub>2</sub> O <sub>3</sub> photoanodes for solar water splitting
resolves10.1021/acs.jpcc.8b09016
Chemical, Structural, and Electronic Characterization of the (010) Surface of Single Crystalline Bismuth Vanadate
resolves10.1021/acs.jpclett.9b01935
Charge Separation, Band-Bending, and Recombination in WO<sub>3</sub> Photoanodes
resolves10.1038/s41467-019-11767-9
In situ observation of picosecond polaron self-localisation in α-Fe2O3 photoelectrochemical cells
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Nanoscale imaging of charge carrier transport in water splitting photoanodes
resolves10.1021/jz4013257
The Origin of Slow Carrier Transport in BiVO<sub>4</sub> Thin Film Photoanodes: A Time-Resolved Microwave Conductivity Study
resolves10.1039/C6EE00036C
Significantly enhanced photocurrent for water oxidation in monolithic Mo:BiVO <sub>4</sub> /SnO <sub>2</sub> /Si by thermally increasing the minority carrier diffusion length
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