Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 71 checked references that resolve
resolves10.1021/jp807753tEnergetic and Electronic Structure Analysis of Intrinsic Defects in SnO<sub>2</sub>
resolves10.1149/1.2133090Physical Properties of SnO2 Materials: II . Electrical Properties
resolves10.1103/PhysRevLett.88.095501Origins of Coexistence of Conductivity and Transparency in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>SnO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1063/1.2964197p
-channel thin-film transistor using p-type oxide semiconductor, SnO
resolves10.1002/pssa.200881792Tin monoxide as an s‐orbital‐based p‐type oxide semiconductor: Electronic structures and TFT application
resolves10.1063/1.3277153Microstructure, optical, and electrical properties of p-type SnO thin films
resolves10.1149/1.3385390Phase and Optical Characterizations of Annealed SnO Thin Films and Their p-Type TFT Application
resolves10.1021/am900838zMicrostructural, Optical, and Electrical Properties of SnO Thin Films Prepared on Quartz via a Two-Step Method
resolves10.1021/jp051822rInfluence of the Anion on Lone Pair Formation in Sn(II) Monochalcogenides: A DFT Study
resolves10.1039/c1cs15098gStereochemistry of post-transition metal oxides: revision of the classical lone pair model
resolves10.1103/PhysRevB.67.125111First-principles indicators of metallicity and cation off-centricity in the IV-VI rocksalt chalcogenides of divalent Ge, Sn, and Pb
resolves10.1103/PhysRevB.52.11690Electronic structure of the lead monoxides: Band-structure calculations and photoelectron spectra
resolves10.1021/jp9841337Origin of the Lone Pair of α-PbO from Density Functional Theory Calculations
resolves10.1103/PhysRevB.73.235104Electronic structure of the<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>α</mml:mi></mml:math>and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>δ</mml:mi></mml:math>phases of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi mathvariant="normal">Bi</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>: A combined<i>ab initio</i>and x-ray spectroscopy study
resolves10.1071/CH01052Prediction of Dispersion Forces: Is There a Problem?
resolves10.1063/1.1424928Empirical correction to density functional theory for van der Waals interactions
resolves10.1021/jp711334fAn ab initio Study of Reduction of V<sub>2</sub>O<sub>5</sub> through the Formation of Oxygen Vacancies and Li Intercalation
resolves10.1103/PhysRevB.82.054116Role of van der Waals bonding in the layered oxide<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mtext>V</mml:mtext><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mtext>O</mml:mtext><mml:mn>5</mml:mn></mml:msub></mml:mrow></mml:math>: First-principles density-functional calculations
resolves10.1021/jp9093172Theoretical and Experimental Study of the Electronic Structures of MoO<sub>3</sub>and MoO<sub>2</sub>
resolves10.1103/PhysRevLett.56.2415Accurate Exchange-Correlation Potential for Silicon and Its Discontinuity on Addition of an Electron
resolves10.1103/PhysRevLett.100.167402Nature of the Band Gap of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>In</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Revealed by First-Principles Calculations and X-Ray Spectroscopy
resolves10.1103/PhysRevB.83.233202Nature of the band gap of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Tl</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:msub><mml:mrow/><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1002/jcc.20078Accurate description of van der Waals complexes by density functional theory including empirical corrections
resolves10.1002/jcc.20495Semiempirical GGA‐type density functional constructed with a long‐range dispersion correction
resolves10.1063/1.3382344A consistent and accurate<i>ab initio</i>parametrization of density functional dispersion correction (DFT-D) for the 94 elements H-Pu
resolves10.1002/jcc.21069Application of semiempirical long‐range dispersion corrections to periodic systems in density functional theory
resolves10.1103/PhysRevB.77.045332Electronic properties and stabilities of bulk and low-index surfaces of SnO in comparison with<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Sn</mml:mi><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>: A first-principles density functional approach with an empirical correction of van der Waals interactions
resolves10.1039/B912859JEmpirically corrected DFT and semi-empirical methods for non-bonding interactions
resolves10.1021/jp106469xImproved Description of the Structure of Molecular and Layered Crystals: Ab Initio DFT Calculations with van der Waals Corrections
resolves10.1063/1.478522Toward reliable density functional methods without adjustable parameters: The PBE0 model
resolves10.1103/PhysRevB.49.14251<i>Ab initio</i>molecular-dynamics simulation of the liquid-metal–amorphous-semiconductor transition in germanium
resolves10.1103/PhysRevB.54.11169Efficient iterative schemes for<i>ab initio</i>total-energy calculations using a plane-wave basis set
resolves10.1021/jp030587eEvaluation of the Hartree−Fock Dispersion (HFD) Model as a Practical Tool for Probing Intermolecular Potentials of Small Aromatic Clusters: Comparison of the HFD and MP2 Intermolecular Potentials
resolves10.1103/PhysRevLett.101.055502Sources of Electrical Conductivity in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>SnO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevB.79.245206Hydrogen interactions with acceptor impurities in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>SnO</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>: First-principles calculations
resolves10.1103/PhysRevB.81.245216Group-V impurities in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>SnO</mml:mtext></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>from first-principles calculations
resolves10.2109/jcersj.112.50Chemical Bonding and Electronic States in .ALPHA.-PbO: Analysis by an ab initio Band Calculation
resolves10.1063/1.1637034Dispersion corrections to density functionals for water aromatic interactions
resolves10.1021/jp109105gThe Relevance of Dispersion Interactions for the Stability of Oxide Phases
resolves10.1063/1.3517868Periodic quantum mechanical simulation of the He–MgO(100) interaction potential
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