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Hole Selective MoO<sub><i>x</i></sub> Contact for Silicon Solar Cells

https://doi.org/10.1021/nl404389u
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Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 27 checked references that resolve
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13% Efficiency Hybrid Organic/Silicon-Nanowire Heterojunction Solar Cell <i>via</i> Interface Engineering
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Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications
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Nature of the Interfaces Between Stoichiometric and Under‐Stoichiometric MoO <sub>3</sub> and 4,4′‐ <i>N</i> , <i>N</i> ′‐dicarbazole‐biphenyl: A Combined Theoretical and Experimental Study
resolves10.1002/adma.201104771
Solution Processed MoO<sub>3</sub> Interfacial Layer for Organic Photovoltaics Prepared by a Facile Synthesis Method
resolves10.1002/adma.201100038
Efficient, Air‐Stable Bulk Heterojunction Polymer Solar Cells Using MoO<sub>x</sub> as the Anode Interfacial Layer
resolves10.1063/1.3601921
High shunt resistance in polymer solar cells comprising a MoO3 hole extraction layer processed from nanoparticle suspension
resolves10.1063/1.3231928
Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films
resolves10.1063/1.2965120
The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl- 4,4′-diamine interfaces
resolves10.1002/adma.200501915
White Stacked Electrophosphorescent Organic Light‐Emitting Devices Employing MoO<sub>3</sub> as a Charge‐Generation Layer
resolves10.1063/1.2126140
High-performance organic thin-film transistors with metal oxide/metal bilayer electrode
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resolves10.1103/PhysRevLett.100.167402
Nature of the Band Gap of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>In</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Revealed by First-Principles Calculations and X-Ray Spectroscopy
resolves10.1016/0038-1098(76)91101-7
The natural energy scale for XPS spectra of metals
resolves10.1116/1.579868
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The work function of the elements and its periodicity
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Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces
resolves10.1016/j.solmat.2013.03.024
Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells
resolves10.1063/1.3592885
Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes
resolves10.1039/c1cs15065k
Solution processing of transparent conductors: from flask to film
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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