Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 27 checked references that resolve
resolves10.1021/nn403982b13% Efficiency Hybrid Organic/Silicon-Nanowire Heterojunction Solar Cell <i>via</i> Interface Engineering
resolves10.1063/1.3610461Highly efficient Si-nanorods/organic hybrid core-sheath heterojunction solar cells
resolves10.1063/1.4734240Micro-textured conductive polymer/silicon heterojunction photovoltaic devices with high efficiency
resolves10.1002/adma.201201630Transition Metal Oxides for Organic Electronics: Energetics, Device Physics and Applications
resolves10.1038/nmat3159Universal energy-level alignment of molecules on metal oxides
resolves10.1002/adfm.201301466Nature of the Interfaces Between Stoichiometric and Under‐Stoichiometric MoO
<sub>3</sub>
and 4,4′‐
<i>N</i>
,
<i>N</i>
′‐dicarbazole‐biphenyl: A Combined Theoretical and Experimental Study
resolves10.1002/adma.201104771Solution Processed MoO<sub>3</sub> Interfacial Layer for Organic Photovoltaics Prepared by a Facile Synthesis Method
resolves10.1002/adma.201100038Efficient, Air‐Stable Bulk Heterojunction Polymer Solar Cells Using MoO<sub>x</sub> as the Anode Interfacial Layer
resolves10.1063/1.3601921High shunt resistance in polymer solar cells comprising a MoO3 hole extraction layer processed from nanoparticle suspension
resolves10.1063/1.3231928Role of the deep-lying electronic states of MoO3 in the enhancement of hole-injection in organic thin films
resolves10.1063/1.2965120The origin of the hole injection improvements at indium tin oxide/molybdenum trioxide/N,N′-bis(1-naphthyl)-N,N′-diphenyl-1,1′-biphenyl- 4,4′-diamine interfaces
resolves10.1002/adma.200501915White Stacked Electrophosphorescent Organic Light‐Emitting Devices Employing MoO<sub>3</sub> as a Charge‐Generation Layer
resolves10.1063/1.2126140High-performance organic thin-film transistors with metal oxide/metal bilayer electrode
resolves10.1103/PhysRevLett.100.167402Nature of the Band Gap of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>In</mml:mi><mml:mn>2</mml:mn></mml:msub><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>Revealed by First-Principles Calculations and X-Ray Spectroscopy
resolves10.1116/1.579868Nature of the use of adventitious carbon as a binding energy standard
resolves10.1063/1.3374333Effect of contamination on the electronic structure and hole-injection properties of MoO3/organic semiconductor interfaces
resolves10.1016/j.solmat.2013.03.024Hydrogen-doped indium oxide/indium tin oxide bilayers for high-efficiency silicon heterojunction solar cells
resolves10.1063/1.3592885Micromorph thin-film silicon solar cells with transparent high-mobility hydrogenated indium oxide front electrodes
resolves10.1039/c1cs15065kSolution processing of transparent conductors: from flask to film
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