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Large-Area Synthesis of Monolayer and Few-Layer MoSe<sub>2</sub>Films on SiO<sub>2</sub>Substrates

https://doi.org/10.1021/nl5000906
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46/46 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 46 checked references that resolve
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
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Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>MoS</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> : A New Direct-Gap Semiconductor
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Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe<sub>2</sub> versus MoS<sub>2</sub>
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Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
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Emerging Photoluminescence in Monolayer MoS<sub>2</sub>
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Single-Layer MoS<sub>2</sub>Phototransistors
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Single-layer MoS2 transistors
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Coupled Spin and Valley Physics in Monolayers of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>and Other Group-VI Dichalcogenides
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Control of valley polarization in monolayer MoS2 by optical helicity
resolves10.1038/nnano.2012.95
Valley polarization in MoS2 monolayers by optical pumping
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Valley-selective circular dichroism of monolayer molybdenum disulphide
resolves10.1126/science.1194975
Two-Dimensional Nanosheets Produced by Liquid Exfoliation of Layered Materials
resolves10.1002/anie.201204208
An Effective Method for the Fabrication of Few‐Layer‐Thick Inorganic Nanosheets
resolves10.1021/nl301164v
Laser-Thinning of MoS<sub>2</sub>: On Demand Generation of a Single-Layer Semiconductor
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Layer-by-Layer Thinning of MoS<sub>2</sub> by Plasma
resolves10.1002/smll.201301542
Layer Thinning and Etching of Mechanically Exfoliated MoS<sub>2</sub> Nanosheets by Thermal Annealing in Air
resolves10.1039/C3NR03101B
Layer-by-layer thinning of MoS <sub>2</sub> by thermal annealing
resolves10.1021/nl204562j
van der Waals Epitaxy of MoS<sub>2</sub> Layers Using Graphene As Growth Templates
resolves10.1002/adma.201104798
Synthesis of Large‐Area MoS<sub>2</sub> Atomic Layers with Chemical Vapor Deposition
resolves10.1021/nl401938t
Epitaxial Monolayer MoS<sub>2</sub> on Mica with Novel Photoluminescence
resolves10.1021/nn403454e
Controlled Growth of High-Quality Monolayer WS<sub>2</sub> Layers on Sapphire and Imaging Its Grain Boundary
resolves10.1039/c2nr31833d
Wafer-scale MoS2 thin layers prepared by MoO3 sulfurization
resolves10.1021/nn405719x
Large-Area Synthesis of Highly Crystalline WSe<sub>2</sub> Monolayers and Device Applications
resolves10.1038/nmat3673
Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
resolves10.1021/nl2043612
Growth of Large-Area and Highly Crystalline MoS<sub>2</sub> Thin Layers on Insulating Substrates
resolves10.1002/smll.201102654
Large‐Area Vapor‐Phase Growth and Characterization of MoS<sub>2</sub> Atomic Layers on a SiO<sub>2</sub> Substrate
resolves10.1080/10641229809350191
Synthesis and characterization of inorganic fullerene-like WSe<sub>2</sub>material
resolves10.1126/science.1171245
Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils
resolves10.1007/978-1-4419-7200-2_2
The Principles of STEM Imaging
resolves10.1021/nl4007479
Intrinsic Structural Defects in Monolayer Molybdenum Disulfide
resolves10.1021/nl3040042
Predicting Dislocations and Grain Boundaries in Two-Dimensional Metal-Disulfides from the First Principles
resolves10.1021/nn1003937
Anomalous Lattice Vibrations of Single- and Few-Layer MoS<sub>2</sub>
resolves10.1103/PhysRevB.88.075320
Anomalous frequency trends in MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>thin films attributed to surface effects
resolves10.1021/nl304169w
Interlayer Breathing and Shear Modes in Few-Trilayer MoS<sub>2</sub> and WSe<sub>2</sub>
resolves10.1103/PhysRevB.88.195313
Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1038/ncomms2498
Electrical control of neutral and charged excitons in a monolayer semiconductor
resolves10.1103/PhysRevB.84.153402
Giant spin-orbit-induced spin splitting in two-dimensional transition-metal dichalcogenide semiconductors
resolves10.1038/nmat3505
Tightly bound trions in monolayer MoS2
resolves10.1088/1367-2630/13/2/023022
Random population model to explain the recombination dynamics in single InAs/GaAs quantum dots under selective optical pumping
resolves10.1038/srep02355
Reversible optical doping of graphene
resolves10.1103/PhysRevB.75.035330
Multiexcitons in type-II colloidal semiconductor quantum dots
resolves10.1038/nnano.2013.151
Optical generation of excitonic valley coherence in monolayer WSe2
resolves10.1063/1.4768218
Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
resolves10.1038/nmat3687
Mobility engineering and a metal–insulator transition in monolayer MoS2
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