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Monolayer MoSe2 Grown by Chemical Vapor Deposition for Fast Photodetection
53/53 checkable references clean · checked 2026-08-30
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 53 checked references that resolve
resolves10.1038/nchem.1589
The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
resolves10.1038/nnano.2012.193
Electronics and optoelectronics of two-dimensional transition metal dichalcogenides
resolves10.1002/adma.201104798
Synthesis of Large‐Area MoS<sub>2</sub> Atomic Layers with Chemical Vapor Deposition
resolves10.1021/nl400687n
Synthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces
resolves10.1021/nn405719x
Large-Area Synthesis of Highly Crystalline WSe
<sub>2</sub>
Monolayers and Device Applications
resolves10.1021/jp212558p
Stable, Single-Layer MX
<sub>2</sub>
Transition-Metal Oxides and Dichalcogenides in a Honeycomb-Like Structure
resolves10.1021/nl301335q
Highly Flexible MoS<sub>2</sub> Thin-Film Transistors with Ion Gel Dielectrics
resolves10.1021/nn203715c
Integrated Circuits and Logic Operations Based on Single-Layer MoS
<sub>2</sub>
resolves10.1103/PhysRevLett.105.136805
Atomically Thin
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
<mml:msub>
<mml:mi>MoS</mml:mi>
<mml:mn>2</mml:mn>
</mml:msub>
</mml:math>
: A New Direct-Gap Semiconductor
resolves10.1021/nn202852j
Nature of Electronic States in Atomically Thin MoS
<sub>2</sub>
Field-Effect Transistors
resolves10.1038/ncomms2018
High-mobility and low-power thin-film transistors based on multilayer MoS2 crystals
resolves10.1038/nmat3518
Vertically stacked multi-heterostructures of layered materials for logic transistors and complementary inverters
resolves10.1063/1.4818463
Modulating electronic transport properties of MoS2 field effect transistor by surface overlayers
resolves10.1021/nl401544y
Extraordinary Sunlight Absorption and One Nanometer Thick Photovoltaics Using Two-Dimensional Monolayer Materials
resolves10.1038/srep01634
Electron-hole transport and photovoltaic effect in gated MoS2 Schottky junctions
resolves10.1126/science.1235547
Strong Light-Matter Interactions in Heterostructures of Atomically Thin Films
resolves10.1038/nnano.2014.26
Electrically tunable excitonic light-emitting diodes based on monolayer WSe2 p–n junctions
resolves10.1002/adma.201202920
Highly Efficient Electrocatalytic Hydrogen Production by MoS
<i>
<sub>x</sub>
</i>
Grown on Graphene‐Protected 3D Ni Foams
resolves10.1002/smll.201302407
Three‐Dimensional Molybdenum Sulfide Sponges for Electrocatalytic Water Splitting
resolves10.1021/ja302846n
Synergetic Effect of MoS<sub>2</sub> and Graphene as Cocatalysts for Enhanced Photocatalytic H<sub>2</sub> Production Activity of TiO<sub>2</sub> Nanoparticles
resolves10.1038/srep03826
Ultrahigh-Gain Photodetectors Based on Atomically Thin Graphene-MoS2 Heterostructures
resolves10.1021/nl302584w
Thermally Driven Crossover from Indirect toward Direct Bandgap in 2D Semiconductors: MoSe
<sub>2</sub>
versus MoS
<sub>2</sub>
resolves10.1103/PhysRevB.87.125415
Phonon softening and direct to indirect band gap crossover in strained single-layer MoSe
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline">
<mml:msub>
<mml:mrow/>
<mml:mn>2</mml:mn>
</mml:msub>
</mml:math>
resolves10.1038/ncomms2498
Electrical control of neutral and charged excitons in a monolayer semiconductor
resolves10.1364/OE.21.004908
Photoluminescence emission and Raman response of monolayer MoS_2, MoSe_2, and WSe_2
resolves10.1038/srep01608
Optical signature of symmetry variations and spin-valley coupling in atomically thin tungsten dichalcogenides
resolves10.1051/rphysap:01990002508080700
MoSe2 thin films synthesized by solid state reactions between Mo and Se thin films
resolves10.1116/1.590151
Investigation of the chemistry and electronic properties of metal/gallium nitride interfaces
resolves10.1063/1.3033501
The roles of thermally evaporated cesium carbonate to enhance the electron injection in organic light emitting devices
resolves10.1063/1.369590
Band lineup of layered semiconductor heterointerfaces prepared by van der Waals epitaxy: Charge transfer correction term for the electron affinity rule
resolves10.1038/ncomms2652
Controlled charge trapping by molybdenum disulphide and graphene in ultrathin heterostructured memory devices
resolves10.1038/srep02657
Defects activated photoluminescence in two-dimensional semiconductors: interplay between bound, charged and free excitons
resolves10.1103/PhysRevB.72.035215
Anion vacancies as a source of persistent photoconductivity in II-VI and chalcopyrite semiconductors
The 1 reference without a DOI — listed, not checked
no DOI — not checkedAnomalous Lattice Vibrations of Singleand Few-Layer MoS2
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