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Learning through ferroelectric domain dynamics in solid-state synapses

37/37 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 37 checked references that resolve

resolves10.1038/81453

Synaptic plasticity: taming the beast

resolves10.3389/fnins.2011.00026

On Spike-Timing-Dependent-Plasticity, Memristive Devices, and Building a Self-Learning Visual Cortex

resolves10.1126/science.275.5297.213

Regulation of Synaptic Efficacy by Coincidence of Postsynaptic APs and EPSPs

resolves10.1523/JNEUROSCI.18-24-10464.1998

Synaptic Modifications in Cultured Hippocampal Neurons: Dependence on Spike Timing, Synaptic Strength, and Postsynaptic Cell Type

resolves10.1162/neco.2008.06-08-804

Competitive STDP-Based Spike Pattern Learning

resolves10.1038/nnano.2012.240

Memristive devices for computing

resolves10.1109/TCT.1971.1083337

Memristor-The missing circuit element

resolves10.1038/nature06932

The missing memristor found

resolves10.1088/0957-4484/22/25/254001

TiO<sub>2</sub>—a prototypical memristive material

resolves10.1038/nmat3070

A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O5−x/TaO2−x bilayer structures

resolves10.1021/nl073225h

CMOS Compatible Nanoscale Nonvolatile Resistance Switching Memory

resolves10.1021/nl201040y

Nanoelectronic Programmable Synapses Based on Phase Change Materials for Brain-Inspired Computing

resolves10.1021/nl904092h

Nanoscale Memristor Device as Synapse in Neuromorphic Systems

resolves10.1088/0957-4484/22/25/254023

Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device

resolves10.1002/adfm.201101935

A Memristive Nanoparticle/Organic Hybrid Synapstor for Neuroinspired Computing

resolves10.1109/TED.2013.2263000

Bio-Inspired Stochastic Computing Using Binary CBRAM Synapses

resolves10.1038/srep01619

Ultrafast Synaptic Events in a Chalcogenide Memristor

resolves10.1038/srep05333

Novel synaptic memory device for neuromorphic computing

resolves10.1038/srep10150

Characterization and Modeling of Nonfilamentary Ta/TaOx/TiO2/Ti Analog Synaptic Device

resolves10.1038/srep10492

Data Clustering using Memristor Networks

resolves10.1038/nature14441

Training and operation of an integrated neuromorphic network based on metal-oxide memristors

resolves10.1126/science.1126230

Tunneling Across a Ferroelectric

resolves10.1038/ncomms5289

Ferroelectric tunnel junctions for information storage and processing

resolves10.1038/nmat3415

A ferroelectric memristor

resolves10.1021/nn401378t

Giant Electroresistance of Super-tetragonal BiFeO<sub>3</sub>-Based Ferroelectric Tunnel Junctions

resolves10.1063/1.4864100

High-performance ferroelectric memory based on fully patterned tunnel junctions

resolves10.1038/npre.2009.3010.1

Memristance can explain Spike-Time-Dependent-Plasticity in Neural Synapses

resolves10.1063/1.2010605

Direct studies of domain switching dynamics in thin film ferroelectric capacitors

resolves10.1103/PhysRevLett.112.147601

Ultrafast Switching of the Electric Polarization and Magnetic Chirality in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>BiFeO</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>by an Electric Field

resolves10.1103/PhysRevB.66.214109

Non-Kolmogorov-Avrami switching kinetics in ferroelectric thin films

resolves10.1103/PhysRevLett.99.267602

Domain Switching Kinetics in Disordered Ferroelectric Thin Films

resolves10.1073/pnas.0906949106

Four-dimensional address topology for circuits with stacked multilayer crossbar arrays

resolves10.1038/nature14539

Deep learning

resolves10.1021/acs.nanolett.5b00104

Depth Profiling Charge Accumulation from a Ferroelectric into a Doped Mott Insulator

resolves10.1103/PhysRevLett.109.067203

Atomistic Molecular Dynamic Simulations of Multiferroics

resolves10.1103/PhysRevLett.99.227602

Finite-Temperature Properties of Multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>BiFeO</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:math>

resolves10.1103/PhysRevB.81.140401

Ferromagnetism in multiferroic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mtext>BiFeO</mml:mtext></mml:mrow><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>films: A first-principles-based study

The 1 reference without a DOI — listed, not checked

no DOI — not checkedHebb, D. O. The Organization of Behavior Wiley & Sons (1949).

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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