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Repeated growth and bubbling transfer of graphene with millimetre-size single-crystal grains using platinum

37/37 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 37 checked references that resolve

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Measurement of the Elastic Properties and Intrinsic Strength of Monolayer Graphene

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The rise of graphene

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Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

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Epitaxial graphene on ruthenium

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Highly Ordered, Millimeter‐Scale, Continuous, Single‐Crystalline Graphene Monolayer Formed on Ru (0001)

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Graphene on Pt(111): Growth and substrate interaction

resolves10.1038/nature07719

Large-scale pattern growth of graphene films for stretchable transparent electrodes

resolves10.1021/nl801827v

Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition

resolves10.1021/nl102834q

Long-Range Ordered Single-Crystal Graphene on High-Quality Heteroepitaxial Ni Thin Films Grown on MgO(111)

resolves10.1126/science.1171245

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils

resolves10.1038/nnano.2010.132

Roll-to-roll production of 30-inch graphene films for transparent electrodes

resolves10.1063/1.3512865

Efficient growth of high-quality graphene films on Cu foils by ambient pressure chemical vapor deposition

resolves10.1021/nl101629g

Graphene Films with Large Domain Size by a Two-Step Chemical Vapor Deposition Process

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Epitaxial Graphene on Cu(111)

resolves10.1021/nl102788f

Graphene Islands on Cu Foils: The Interplay between Shape, Orientation, and Defects

resolves10.1021/ja109793s

Large-Area Graphene Single Crystals Grown by Low-Pressure Chemical Vapor Deposition of Methane on Copper

resolves10.1021/nl102355e

Role of Kinetic Factors in Chemical Vapor Deposition Synthesis of Uniform Large Area Graphene Using Copper Catalyst

resolves10.1038/nature09718

Grains and grain boundaries in single-layer graphene atomic patchwork quilts

resolves10.1038/nmat3010

Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition

resolves10.1038/nmat2830

Electronic transport in polycrystalline graphene

resolves10.1016/j.susc.2008.08.037

Graphene on metal surfaces

resolves10.1021/nn203700w

Electrochemical Delamination of CVD-Grown Graphene Film: Toward the Recyclable Use of Copper Catalyst

resolves10.1016/0022-5088(68)90158-6

The solubility of carbon in palladium and platinum

resolves10.1021/nn201978y

Role of Hydrogen in Chemical Vapor Deposition Growth of Large Single-Crystal Graphene

resolves10.1126/science.1166999

Graphene at the Edge: Stability and Dynamics

resolves10.1006/jcat.1999.2498

Methane Dissociation and Syngas Formation on Ru, Os, Rh, Ir, Pd, Pt, Cu, Ag, and Au: A Theoretical Study

resolves10.1021/jp2024445

Reactivity of Transition Metals (Pd, Pt, Cu, Ag, Au) toward Molecular Hydrogen Dissociation: Extended Surfaces versus Particles Supported on TiC(001) or Small Is Not Always Better and Large Is Not Always Bad

resolves10.1021/nn103102a

Domain (Grain) Boundaries and Evidence of “Twinlike” Structures in Chemically Vapor Deposited Grown Graphene

resolves10.1002/adma.200803016

Synthesis of Large‐Area Graphene Layers on Poly‐Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation

resolves10.1103/PhysRevLett.97.187401

Raman Spectrum of Graphene and Graphene Layers

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Monitoring dopants by Raman scattering in an electrochemically top-gated graphene transistor

resolves10.1063/1.3077021

Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric

resolves10.1063/1.3599708

Boron nitride substrates for high mobility chemical vapor deposited graphene

resolves10.1126/science.1199595

Giant Nonlocality Near the Dirac Point in Graphene

The 1 reference without a DOI — listed, not checked

no DOI — not checkedRen, W. C., Gao, L. B., Ma, L. P. & Cheng, H. M. A method for the non-destructive transfer of graphene at a low cost. Chinese patent 201110154465.9 (2011).

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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