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Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene
30/30 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 30 checked references that resolve
resolves10.1038/nmat3010
Control and characterization of individual grains and grain boundaries in graphene grown by chemical vapour deposition
resolves10.1103/PhysRevLett.108.246103
Raman Spectroscopy Study of Rotated Double-Layer Graphene: Misorientation-Angle Dependence of Electronic Structure
resolves10.1016/j.surfrep.2011.12.001
The surface science of graphene: Metal interfaces, CVD synthesis, nanoribbons, chemical modifications, and defects
resolves10.1038/nature07719
Large-scale pattern growth of graphene films for stretchable transparent electrodes
resolves10.1021/ja505454v
Interdependency of Subsurface Carbon Distribution and Graphene–Catalyst Interaction
resolves10.1021/nl1029978
Wafer Scale Homogeneous Bilayer Graphene Films by Chemical Vapor Deposition
resolves10.1021/cm4021854
Controllable and Rapid Synthesis of High-Quality and Large-Area Bernal Stacked Bilayer Graphene Using Chemical Vapor Deposition
resolves10.1038/ncomms3096
Chemical vapour deposition growth of large single crystals of monolayer and bilayer graphene
resolves10.1021/nl104000b
Formation of Bilayer Bernal Graphene: Layer-by-Layer Epitaxy via Chemical Vapor Deposition
resolves10.1021/nn5015177
Asymmetric Growth of Bilayer Graphene on Copper Enclosures Using Low-Pressure Chemical Vapor Deposition
resolves10.1021/nn302918x
High-Yield Chemical Vapor Deposition Growth of High-Quality Large-Area AB-Stacked Bilayer Graphene
resolves10.1021/nn5049188
Equilibrium Chemical Vapor Deposition Growth of Bernal-Stacked Bilayer Graphene
resolves10.1126/science.1243879
The Role of Surface Oxygen in the Growth of Large Single-Crystal Graphene on Copper
resolves10.1002/smll.200901173
Probing Layer Number and Stacking Order of Few‐Layer Graphene by Raman Spectroscopy
resolves10.1021/jp4047648
Graphene Nucleation Density on Copper: Fundamental Role of Background Pressure
resolves10.1021/nn303352k
Toward the Synthesis of Wafer-Scale Single-Crystal Graphene on Copper Foils
resolves10.1021/nl4023572
Observing Graphene Grow: Catalyst–Graphene Interactions during Scalable Graphene Growth on Polycrystalline Copper
resolves10.1021/jp211818s
The Role of Stable and Mobile Carbon Adspecies in Copper-Promoted Graphene Growth
resolves10.1103/PhysRevLett.105.166601
Electronic Transport in Dual-Gated Bilayer Graphene at Large Displacement Fields
resolves10.1021/nl304706j
Rapid Identification of Stacking Orientation in Isotopically Labeled Chemical-Vapor Grown Bilayer Graphene by Raman Spectroscopy
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