Reference health
Temporal correlation detection using computational phase-change memory
40/40 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
8 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 40 checked references that resolve
resolves10.1038/nature08940
‘Memristive’ switches enable ‘stateful’ logic operations via material implication
resolves10.1109/TED.2015.2439635
Experimental Demonstration and Tolerancing of a Large-Scale Neural Network (165 000 Synapses) Using Phase-Change Memory as the Synaptic Weight Element
resolves10.1109/ISCA.2016.13
PRIME: A Novel Processing-in-Memory Architecture for Neural Network Computation in ReRAM-Based Main Memory
resolves10.1109/HPCA.2016.7446049
Memristive Boltzmann machine: A hardware accelerator for combinatorial optimization and deep learning
resolves10.1002/adma.201101060
Arithmetic and Biologically‐Inspired Computing Using Phase‐Change Materials
resolves10.1002/adfm.201202383
Beyond von‐Neumann Computing with Nanoscale Phase‐Change Memory Devices
resolves10.1109/LED.2015.2457243
Accumulation-Based Computing Using Phase-Change Memories With FET Access Devices
resolves10.1088/1367-2630/17/9/093035
Subthreshold electrical transport in amorphous phase-change materials
resolves10.1126/science.1201938
Low-Power Switching of Phase-Change Materials with Carbon Nanotube Electrodes
resolves10.1088/0957-4484/27/35/355205
All-memristive neuromorphic computing with level-tuned neurons
resolves10.1523/JNEUROSCI.23-09-03697.2003
Learning Input Correlations through Nonlinear Temporally Asymmetric Hebbian Plasticity
resolves10.1063/1.3599559
Physical origin of the resistance drift exponent in amorphous phase change materials
resolves10.1109/IRPS.2015.7112808
A collective relaxation model for resistance drift in phase change memory cells
The 8 references without a DOI — listed, not checked
no DOI — not checkedSeshadri, V. et al. Buddy-ram: Improving the performance and efficiency of bulk bitwise operations using DRAM. arXiv:1611.09988 (2016).
no DOI — not checkedKvatinsky, S. et al. Magic: Memristor-aided logic. IEEE Trans. Circ. Syst. II Exp. Briefs 61, 895–899 (2014).
no DOI — not checkedShafiee, A. et al. in Proceedings of the 43rd International Symposium on Computer Architecture, 14–26 (IEEE Press, 2016).
no DOI — not checkedBurr, G. W. et al. Neuromorphic computing using non-volatile memory. Adv. Phys. X 2, 89–124 (2017).
no DOI — not checkedGallo, M. L. et al. Mixed-precision memcomputing. arXiv:1701.04279 (2017).
no DOI — not checkedClose, G. et al. in IEEE International Electron Devices Meeting (IEDM), 29–5 (IEEE, 2010).
no DOI — not checkedPozidis, H. et al. in 4th IEEE International Memory Workshop (IMW), 1–4 (IEEE, 2012).
no DOI — not checkedKim, W. et al. in IEEE International Electron Devices Meeting (IEDM), 4–2 (IEEE, 2016).
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
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