Reference health
Self-clocking fast and variation tolerant true random number generator based on a stochastic mott memristor
35/35 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
6 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 35 checked references that resolve
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A Contact-Resistive Random-Access-Memory-Based True Random Number Generator
resolves10.1109/JETCAS.2015.2426492
True Random Number Generation by Variability of Resistive Switching in Oxide-Based Devices
resolves10.1109/TED.2016.2537792
Physical Unbiased Generation of Random Numbers With Coupled Resistive Switching Devices
resolves10.1038/s41467-017-00869-x
A novel true random number generator based on a stochastic diffusive memristor
resolves10.1002/aelm.201800543
A True Random Number Generator Using Threshold‐Switching‐Based Memristors in an Efficient Circuit Design
resolves10.1002/aelm.201901117
A Combination of a Volatile‐Memristor‐Based True Random‐Number Generator and a Nonlinear‐Feedback Shift Register for High‐Speed Encryption
resolves10.7567/APEX.7.083001
Spin dice: A scalable truly random number generator based on spintronics
resolves10.1016/j.procs.2017.12.074
Memristor based Random Number Generator: Architectures and Evaluation
resolves10.1088/1361-6528/aa8b3a
High-speed true random number generation based on paired memristors for security electronics
resolves10.1038/nature23307
Chaotic dynamics in nanoscale NbO2 Mott memristors for analogue computing
resolves10.1088/0957-4484/23/21/215202
Sub-100 fJ and sub-nanosecond thermally driven threshold switching in niobium oxide crosspoint nanodevices
resolves10.1002/adfm.201704175
Designing Negative Differential Resistance Devices Based on Self‐Heating
resolves10.1063/1.4939913
An accurate locally active memristor model for S-type negative differential resistance in NbOx
resolves10.1038/s41467-017-00773-4
Physical origins of current and temperature controlled negative differential resistances in NbO2
resolves10.1038/s41467-018-04452-w
Separation of current density and electric field domains caused by nonlinear electronic instabilities
resolves10.1088/1361-6528/aacee4
Anatomy of filamentary threshold switching in amorphous niobium oxide
resolves10.1063/1.5027152
Transient dynamics of NbOx threshold switches explained by Poole-Frenkel based thermal feedback mechanism
resolves10.1088/1361-6528/aa5de0
Coupling dynamics of Nb/Nb
<sub>2</sub>
O
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relaxation oscillators
resolves10.1038/s41467-019-13827-6
An artificial spiking afferent nerve based on Mott memristors for neurorobotics
resolves10.1002/aelm.201600169
Multidimensional Simulation of Threshold Switching in NbO<sub>2</sub> Based on an Electric Field Triggered Thermal Runaway Model
resolves10.1039/C5RA19300A
Physical model of threshold switching in NbO
<sub>2</sub>
based memristors
resolves10.1006/jssc.1996.0087
Electroforming and Switching in Oxides of Transition Metals: The Role of Metal–Insulator Transition in the Switching Mechanism
resolves10.1088/0022-3727/48/19/195105
Threshold current reduction for the metal–insulator transition in NbO<sub>2−<i>x</i></sub>-selector devices: the effect of ReRAM integration
resolves10.1109/LED.2019.2904279
Memory Switching and Threshold Switching in a 3D Nanoscaled NbO<sub>X</sub> System
The 6 references without a DOI — listed, not checked
no DOI — not checkedWei, Z. et al. IEEE international electron devices meeting (IEDM). 4.8.1-4.8.4. (2016)
no DOI — not checkedHashim, N. A. B. N., Teo, J., Hamid, M. S. A. & Hamid, F. A. B. IEEE student conference on research and development (SCOReD). 1–5 (2016)
no DOI — not checkedWang, Y., Wen, W., Li, H. & Hu, M. Proceedings of the 25th edition on Great Lakes Symposium on VLSI, 271–276 (2015).
no DOI — not checkedWon Ho, C. et al. IEEE international electron devices meeting. 12.15.11-12.15.14. (2014).
no DOI — not checkedCha, E. et al. IEEE International Electron Devices Meeting. 10.15.11-10.15.14. (2013).
no DOI — not checkedRukhin A. et al. NIST Special Publication 800-822 (2010).
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