Reference health
Dielectric disorder in two-dimensional materials
47/47 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 47 checked references that resolve
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Role of interface roughness and alloy disorder in photoluminescence in quantum-well structures
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The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
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Electronic states of semiconductor clusters: Homogeneous and inhomogeneous broadening of the optical spectrum
resolves10.1021/acs.nanolett.6b03276
Probing the Influence of Dielectric Environment on Excitons in Monolayer WSe<sub>2</sub>: Insight from High Magnetic Fields
resolves10.1021/acs.nanolett.5b05009
Two-Dimensional Heterojunctions from Nonlocal Manipulations of the Interactions
resolves10.1038/ncomms15251
Coulomb engineering of the bandgap and excitons in two-dimensional materials
resolves10.1103/PhysRevB.97.041409
Environmentally sensitive theory of electronic and optical transitions in atomically thin semiconductors
resolves10.1088/2053-1583/aa6531
Band structure engineering in van der Waals heterostructures via dielectric screening: the GΔW method
resolves10.1038/s41928-019-0207-4
A dielectric-defined lateral heterojunction in a monolayer semiconductor
resolves10.1038/nmat3386
Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
resolves10.1063/1.4922049
Mechanism of charge transfer and its impacts on Fermi-level pinning for gas molecules adsorbed on monolayer WS2
resolves10.1146/annurev-conmatphys-033117-054009
Optical and Excitonic Properties of Atomically Thin Transition-Metal Dichalcogenides
resolves10.1103/RevModPhys.90.021001
<i>Colloquium</i>
: Excitons in atomically thin transition metal dichalcogenides
resolves10.1103/PhysRevB.89.125309
Analytical approach to excitonic properties of MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevB.92.085413
Bright and dark singlet excitons via linear and two-photon spectroscopy in monolayer transition-metal dichalcogenides
resolves10.1021/nl504868p
Observation of Excitonic Rydberg States in Monolayer MoS<sub>2</sub> and WS<sub>2</sub> by Photoluminescence Excitation Spectroscopy
resolves10.1039/C9NR04211C
Intrinsic lifetime of higher excitonic states in tungsten diselenide monolayers
resolves10.1038/ncomms13279
Excitonic linewidth and coherence lifetime in monolayer transition metal dichalcogenides
resolves10.1103/PhysRevLett.113.026803
Tightly Bound Excitons in Monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WSe</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevLett.113.076802
Exciton Binding Energy and Nonhydrogenic Rydberg Series in Monolayer
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1007/s12274-015-0762-6
Strain-induced direct–indirect bandgap transition and phonon modulation in monolayer WS2
resolves10.1021/acs.nanolett.6b02615
Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS<sub>2</sub>
resolves10.1002/adma.201602626
Indirect Bandgap Puddles in Monolayer MoS<sub>2</sub> by Substrate‐Induced Local Strain
resolves10.1103/PhysRevB.98.115308
Strain tuning of excitons in monolayer
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1021/acs.nanolett.7b04868
Strain Control of Exciton–Phonon Coupling in Atomically Thin Semiconductors
resolves10.1021/acs.nanolett.8b00049
Probing the Optical Properties and Strain-Tuning of Ultrathin Mo<sub>1–<i>x</i></sub>W<sub><i>x</i></sub>Te<sub>2</sub>
resolves10.1038/ncomms2498
Electrical control of neutral and charged excitons in a monolayer semiconductor
resolves10.1103/PhysRevLett.115.126802
Electrical Tuning of Exciton Binding Energies in Monolayer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>WS</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1002/pssb.2221700130
The Role of Polar Additives on Charge Transport in Molecularly Doped Polymers
resolves10.1038/nnano.2015.70
Multi-terminal transport measurements of MoS2 using a van der Waals heterostructure device platform
resolves10.1088/2053-1583/aa6aa1
Approaching the intrinsic photoluminescence linewidth in transition metal dichalcogenide monolayers
resolves10.1103/PhysRevB.96.085302
Charged excitons in monolayer
<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi>WSe</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
: Experiment and theory
resolves10.1038/ncomms14927
Enabling valley selective exciton scattering in monolayer WSe2 through upconversion
resolves10.1103/PhysRevLett.120.057405
Magnetooptics of Exciton Rydberg States in a Monolayer Semiconductor
resolves10.1038/s41567-017-0033-4
Giant spin-splitting and gap renormalization driven by trions in single-layer WS2/h-BN heterostructures
resolves10.1103/PhysRevLett.120.207401
Exciton Diffusion and Halo Effects in Monolayer Semiconductors
resolves10.1063/1.5026478
Exciton diffusion in WSe2 monolayers embedded in a van der Waals heterostructure
The 3 references without a DOI — listed, not checked
no DOI — not checkedRytova, N. S. Screened potential of a point charge in a thin film. Proc. MSU Phys. Astron. 3, 30 (1967).
no DOI — not checkedKeldysh, L. V. Coulomb interaction in thin semiconductor and semimetal films. JETP Lett. 29, 658–661 (1979).
no DOI — not checkedCadiz, F. et al. Excitonic linewidth approaching the homogeneous limit in MoS2-based van der Waals heterostructures. Phys. Rev. X 7, 021026 (2017).
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