Reference health
Graphene-assisted metal transfer printing for wafer-scale integration of metal electrodes and two-dimensional materials
38/38 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 38 checked references that resolve
resolves10.1021/acs.nanolett.9b02497
Contact Engineering High-Performance n-Type MoTe<sub>2</sub> Transistors
resolves10.1002/adma.201705540
Contact‐Engineered Electrical Properties of MoS<sub>2</sub> Field‐Effect Transistors via Selectively Deposited Thiol‐Molecules
resolves10.1021/acs.nanolett.7b04205
High-Performance WSe<sub>2</sub> Phototransistors with 2D/2D Ohmic Contacts
resolves10.1021/acs.nanolett.7b01536
Low-Temperature Ohmic Contact to Monolayer MoS<sub>2</sub> by van der Waals Bonded Co/<i>h</i>-BN Electrodes
resolves10.1021/acsnano.8b03331
Schottky Barrier Height Engineering for Electrical Contacts of Multilayered MoS<sub>2</sub> Transistors with Reduction of Metal-Induced Gap States
resolves10.1038/s41586-019-1052-3
Van der Waals contacts between three-dimensional metals and two-dimensional semiconductors
resolves10.1021/acsami.7b02739
Defect Dominated Charge Transport and Fermi Level Pinning in MoS<sub>2</sub>/Metal Contacts
resolves10.1039/D0NR01379J
Gap state distribution and Fermi level pinning in monolayer to multilayer MoS
<sub>2</sub>
field effect transistors
resolves10.1021/acsnano.6b07159
Fermi Level Pinning at Electrical Metal Contacts of Monolayer Molybdenum Dichalcogenides
resolves10.1021/nl303583v
High Performance Multilayer MoS<sub>2</sub> Transistors with Scandium Contacts
resolves10.1021/nl403465v
The Unusual Mechanism of Partial Fermi Level Pinning at Metal–MoS<sub>2</sub> Interfaces
resolves10.1038/s41586-018-0129-8
Approaching the Schottky–Mott limit in van der Waals metal–semiconductor junctions
resolves10.1126/science.aat8126
Controlled crack propagation for atomic precision handling of wafer-scale two-dimensional materials
resolves10.1038/nature14417
High-mobility three-atom-thick semiconducting films with wafer-scale homogeneity
resolves10.1038/nature23905
Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures
resolves10.1021/acsami.9b04791
Synthesis of Wafer-Scale Monolayer WS<sub>2</sub> Crystals toward the Application in Integrated Electronic Devices
resolves10.1021/acsnano.0c06750
Wafer-Scale Epitaxial Growth of Unidirectional WS<sub>2</sub> Monolayers on Sapphire
resolves10.1021/acs.nanolett.0c02531
Wafer-Scale Highly Oriented Monolayer MoS<sub>2</sub> with Large Domain Sizes
resolves10.1038/s41586-020-1939-z
Heterogeneous integration of single-crystalline complex-oxide membranes
resolves10.1038/nature22053
Remote epitaxy through graphene enables two-dimensional material-based layer transfer
resolves10.1016/j.apsusc.2020.147066
Wafer-scale fabrication of single-crystal graphene on Ge(110) substrate by optimized CH4/H2 ratio
resolves10.1126/science.1252268
Wafer-Scale Growth of Single-Crystal Monolayer Graphene on Reusable Hydrogen-Terminated Germanium
resolves10.1021/acs.nanolett.6b03137
Strong Fermi-Level Pinning at Metal/n-Si(001) Interface Ensured by Forming an Intact Schottky Contact with a Graphene Insertion Layer
resolves10.1557/PROC-203-163
Hardness and Adhesion Measurements of Copper Metallizations by a Continuous Indentation Approach
resolves10.1038/s41928-019-0245-y
Transferred via contacts as a platform for ideal two-dimensional transistors
resolves10.1103/PhysRevB.89.205417
Stability and electronic structures of native defects in single-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML"><mml:msub><mml:mi mathvariant="normal">MoS</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1073/pnas.1405435111
Strong interlayer coupling in van der Waals heterostructures built from single-layer chalcogenides
resolves10.1038/s41467-020-15776-x
Doping-free complementary WSe2 circuit via van der Waals metal integration
resolves10.1021/acsanm.0c01235
Large-Scale Atomically Thin Monolayer 2H-MoS<sub>2</sub> Field-Effect Transistors
resolves10.1002/adma.201304245
3D‐Transistor Array Based on Horizontally Suspended Silicon Nano‐bridges Grown via a Bottom‐Up Technique
The 1 reference without a DOI — listed, not checked
no DOI — not checkedLee, C. H. et al. Atomically thin p–n junctions with van der Waals heterointerfaces. Nat. Nanotechnol. 9, 676–681 (2014).
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