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Less strained and more efficient GaN light-emitting diodes with embedded silica hollow nanospheres
42/42 checkable references clean · checked 2026-07-26
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
The 42 checked references that resolve
resolves10.1063/1.111832
Candela-class high-brightness InGaN/AlGaN double-heterostructure blue-light-emitting diodes
resolves10.1088/0022-3727/43/7/073001
Properties of the state of the art of bulk III–V nitride substrates and homoepitaxial layers
resolves10.1063/1.4769228
Bulk GaN based violet light-emitting diodes with high efficiency at very high current density
resolves10.1002/pssc.201200693
Properties of MOCVD GaN/AlGaN heterostructures grown on polar and non‐polar bulk GaN substrates
resolves10.1088/0268-1242/27/2/024003
Characterization and growth mechanism of nonpolar and semipolar GaN layers grown on patterned sapphire substrates
resolves10.1143/APEX.5.082103
Long-Lifetime True Green Laser Diodes with Output Power over 50 mW above 525 nm Grown on Semipolar $\{20\bar{2}1\}$ GaN Substrates
resolves10.1063/1.118322
Correlation of cathodoluminescence inhomogeneity with microstructural defects in epitaxial GaN grown by metalorganic chemical-vapor deposition
resolves10.1143/JJAP.37.L398
Direct Evidence that Dislocations are Non-Radiative Recombination Centers in GaN
resolves10.1016/j.jcrysgro.2009.12.018
Microstructures produced during the epitaxial growth of InGaN alloys
resolves10.1080/14786430701199663
Anti-localization suppresses non-radiative recombination in GaInN/GaN quantum wells
resolves10.1002/1521-396X(200111)188:1<127::AID-PSSA127>3.0.CO;2-T
Extraction Efficiency of GaN-Based LEDs
resolves10.1016/j.jcrysgro.2004.08.031
In situ measurements of strains and stresses in GaN heteroepitaxy and its impact on growth temperature
resolves10.1063/1.120091
Dislocation density reduction via lateral epitaxy in selectively grown GaN structures
resolves10.1063/1.120164
Lateral epitaxy of low defect density GaN layers via organometallic vapor phase epitaxy
resolves10.1143/JJAP.40.L583
High Output Power InGaN Ultraviolet Light-Emitting Diodes Fabricated on Patterned Substrates Using Metalorganic Vapor Phase Epitaxy
resolves10.1063/1.1644621
Air-bridged lateral growth of crack-free Al0.24Ga0.76N on highly relaxed porous GaN
resolves10.1088/0957-4484/20/8/085303
A nanoporous AlN layer patterned by anodic aluminum oxide and its application as a buffer layer in a GaN-based light-emitting diode
resolves10.1002/adma.200601628
Heteroepitaxial Growth of High‐Quality GaN Thin Films on Si Substrates Coated with Self‐Assembled Sub‐micrometer‐sized Silica Balls
resolves10.1063/1.2891067
High performance of GaN thin films grown on sapphire substrates coated with a silica-submicron-sphere monolayer film
resolves10.1063/1.3152012
Dislocation density reduction in GaN by dislocation filtering through a self-assembled monolayer of silica microspheres
resolves10.1063/1.4716472
Improved emission efficiency of a-plane GaN light emitting diodes with silica nano-spheres integrated into a-plane GaN buffer layer
resolves10.1149/1.3443225
Selective Defect Blocking by Self-Assembled Silica Nanospheres for High Quality GaN Template
resolves10.1109/LED.2010.2103922
Self-Assembled Periodic Silica Nanosphere Arrays on Wet-Etched Patterned Sapphire Substrate for a High-Light-Extraction-Efficiency Light-Emitting Diode
resolves10.1364/OE.19.023429
Enhanced light emission in blue light-emitting diodes by multiple Mie scattering from embedded silica nanosphere stacking layers
resolves10.1364/OE.19.002029
Effect of embedded silica nanospheres on improving the performance of InGaN/GaN light-emitting diodes
resolves10.1063/1.1478137
Modeling of elastic deformation of multilayers due to residual stresses and external bending
resolves10.1063/1.116495
Role of threading dislocation structure on the x-ray diffraction peak widths in epitaxial GaN films
resolves10.1364/OE.15.005494
Uniform illumination and rigorous electromagnetic simulations applied to CMOS image sensors
resolves10.1364/OE.17.024234
Soft-landing and optical characterization of a preselected single fluorescent particle on a tapered optical fiber
resolves10.1016/0029-5493(84)90106-7
ABAQUS/EPGEN—A general purpose finite element code with emphasis on nonlinear applications
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