Reference health
Direct fabrication of graphene on SiO2 enabled by thin film stress engineering
42/42 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 42 checked references that resolve
resolves10.1063/1.3643444
The effect of chemical residues on the physical and electrical properties of chemical vapor deposited graphene transferred to SiO2
resolves10.1038/nnano.2010.132
Roll-to-roll production of 30-inch graphene films for transparent electrodes
resolves10.1021/nl902623y
Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes
resolves10.1016/j.scriptamat.2011.12.034
Direct transfer of graphene without the removal of a metal substrate using a liquid polymer
resolves10.1088/1742-6596/433/1/012002
Simple method to transfer graphene from metallic catalytic substrates to flexible surfaces without chemical etching
resolves10.1021/nn202923y
Direct Growth of Bilayer Graphene on SiO<sub>2</sub> Substrates by Carbon Diffusion through Nickel
resolves10.1038/srep01348
Scalable and Direct Growth of Graphene Micro Ribbons on Dielectric Substrates
resolves10.1063/1.2760936
Suspended heated silicon platform for rapid thermal control of surface reactions with application to carbon nanotube synthesis
resolves10.1021/nl901073g
Correlating Raman Spectral Signatures with Carrier Mobility in Epitaxial Graphene: A Guide to Achieving High Mobility on the Wafer Scale
resolves10.1002/jrs.4156
Thickness and stacking geometry effects on high frequency overtone and combination Raman modes of graphene
resolves10.1021/nn200010m
Second-Order Overtone and Combination Raman Modes of Graphene Layers in the Range of 1690−2150 cm<sup>−1</sup>
resolves10.1103/PhysRevB.79.205433
Uniaxial strain in graphene by Raman spectroscopy:<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>G</mml:mi></mml:math>peak splitting, Grüneisen parameters, and sample orientation
resolves10.1021/nl201387x
Observation of Raman <i>G</i>-Peak Split for Graphene Nanoribbons with Hydrogen-Terminated Zigzag Edges
resolves10.1063/1.3500295
Effects of particle contamination and substrate interaction on the Raman response of unintentionally doped graphene
resolves10.1002/adma.200803016
Synthesis of Large‐Area Graphene Layers on Poly‐Nickel Substrate by Chemical Vapor Deposition: Wrinkle Formation
resolves10.1007/BF02663018
Trapping of hydrogen and helium at grain boundaries in nickel: An atomistic study
resolves10.1016/0022-3115(83)90177-0
On the modeling of the high-temperature embrittlement of metals containing helium
resolves10.1016/0022-3115(91)90025-3
Helium and hydrogen effects on the embrittlement of iron- and nickel-based alloys
resolves10.1016/S0022-3115(02)01279-5
The effect of hydrogen and helium on microvoid formation in iron and nickel
resolves10.1016/0022-3115(88)90467-9
The influence of helium on the high temperature mechanical properties of DIN 1.4914 martensitic steel
resolves10.1016/j.actamat.2009.05.012
Grain-boundary engineering markedly reduces susceptibility to intergranular hydrogen embrittlement in metallic materials
resolves10.1111/j.1151-2916.2003.tb03309.x
Exploiting Covalency to Enhance Metal–Oxide and Oxide–Oxide Adhesion at Heterogeneous Interfaces
resolves10.1103/PhysRevLett.106.106801
Semiconducting Electronic Property of Graphene Adsorbed on (0001) Surfaces of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mi>SiO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1103/PhysRevB.69.155406
Interlayer cohesive energy of graphite from thermal desorption of polyaromatic hydrocarbons
resolves10.1557/JMR.2009.0048
Failure by simultaneous grain growth, strain localization, and interface debonding in metal films on polymer substrates
resolves10.1016/j.carbon.2012.04.043
Synthesis of tall carpets of vertically aligned carbon nanotubes by in situ generation of water vapor through preheating of added oxygen
The 2 references without a DOI — listed, not checked
no DOI — not checkedZhiping Xu & Markus, J. B. Interface structure and mechanics between graphene and metal substrates: a first-principles study. J. Phys.: Condens. Matter 22, 485301 (2010).
no DOI — not checkedHutchinson, J. W. Mixed mode cracking in layered materials. Adv. Appl. Mech. 29, 191 (1992).
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
checked 2026-07-22 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record
Embed this badge
Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.
<a href="https://citestamp.com/citestamped/10.1038/srep05049"><img src="https://citestamp.com/citestamped/10.1038/srep05049/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[](https://citestamp.com/citestamped/10.1038/srep05049)