Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 49 checked references that resolve
resolves10.1021/nn400280cProgress, Challenges, and Opportunities in Two-Dimensional Materials Beyond Graphene
resolves10.1038/nchem.1589The chemistry of two-dimensional layered transition metal dichalcogenide nanosheets
resolves10.1021/nl1022139Large Scale Growth and Characterization of Atomic Hexagonal Boron Nitride Layers
resolves10.1002/adma.201104798Synthesis of Large‐Area MoS<sub>2</sub> Atomic Layers with Chemical Vapor Deposition
resolves10.1038/nmat3633Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide
resolves10.1038/nmat3673Vapour phase growth and grain boundary structure of molybdenum disulphide atomic layers
resolves10.1021/nl400687nSynthesis and Transfer of Single-Layer Transition Metal Disulfides on Diverse Surfaces
resolves10.1021/nn403454eControlled Growth of High-Quality Monolayer WS<sub>2</sub> Layers on Sapphire and Imaging Its Grain Boundary
resolves10.1021/nl301702rHigh-Performance Single Layered WSe<sub>2</sub> p-FETs with Chemically Doped Contacts
resolves10.1103/PhysRevLett.105.136805Atomically Thin
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<mml:msub>
<mml:mi>MoS</mml:mi>
<mml:mn>2</mml:mn>
</mml:msub>
</mml:math>
: A New Direct-Gap Semiconductor
resolves10.1021/nl400107kHighly Responsive Ultrathin GaS Nanosheet Photodetectors on Rigid and Flexible Substrates
resolves10.1021/nn300889cSynthesis of Few-Layer GaSe Nanosheets for High Performance Photodetectors
resolves10.1063/1.1421215Photoluminescence frequency up-conversion in GaSe single crystals as studied by confocal microscopy
resolves10.1364/OL.27.001454Efficient, tunable, and coherent 018–527-THz source based on GaSe crystal
resolves10.1103/PhysRevB.84.085314Size-induced effects in gallium selenide electronic structure: The influence of interlayer interactions
resolves10.1039/c3cp50233cTunable electronic and dielectric behavior of GaS and GaSe monolayers
resolves10.1021/cm401661xSingle-Layer Group-III Monochalcogenide Photocatalysts for Water Splitting
resolves10.1021/nn303745eRole of Boundary Layer Diffusion in Vapor Deposition Growth of Chalcogenide Nanosheets: The Case of GeS
resolves10.1002/adfm.201102913Rapid Characterization of Ultrathin Layers of Chalcogenides on SiO<sub>2</sub>/Si Substrates
The 2 references without a DOI — listed, not checked
no DOI — not checkedBelen'kii, G. L., Godzhaev, M. O., Salaev, E. Y. & Aliev, E. T. High-temperature electron-hole liquid in layered InSe, GaSe and GaS crystals. Sov. Phys. JETP 64, 1117–1123 (1986).
no DOI — not checkedLei, S. D. et al. Evolution of the electronic band structures and efficient photo-detection in atomic layers of InSe. ACS Nano 10.1021/nn405529r.
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