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Investigation of Localized States in GaAsSb Epilayers Grown by Molecular Beam Epitaxy

37/37 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 37 checked references that resolve

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GaAs photovoltaics and optoelectronics using releasable multilayer epitaxial assemblies

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Optical study of GaAs1−Sb layers grown on GaAs substrates by gas-source molecular beam epitaxy

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Optical spin polarization and Hanle effect in GaAsSb: Temperature dependence

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Tailoring the Valence Band Offset of Al2O3 on Epitaxial GaAs1–ySby with Tunable Antimony Composition

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Tailoring the photoluminescence characteristics of p-type GaSb: The role of surface chemical passivation

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Characteristics of GaAsSb single-quantum-well-lasers emitting near 1.3 μm

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Temperature stable mid-infrared GaInAsSb/GaSb Vertical Cavity Surface Emitting Lasers (VCSELs)

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Optical studies of strained type II GaAs0.7Sb0.3/GaAs multiple quantum wells

resolves10.1063/1.1628395

Structural and optical properties of strain-compensated GaAsSb/GaAs quantum wells with high Sb composition

resolves10.3390/ma3031497

Photoluminescence and Band Alignment of Strained GaAsSb/GaAs QW Structures Grown by MBE on GaAs

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Strained GaAsSb/GaAs QW structures grown by MBE on GaAs (100) for applications near 1.3micron

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Carrier dynamics between delocalized and localized states in type-II GaAsSb/GaAs quantum wells

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Optical characterization of a strain-compensated GaAs0.64Sb0.36/GaAs0.79P0.21 quantum well structure grown by metal organic vapor phase epitaxy

resolves10.1063/1.4937921

Conductance slope and curvature coefficient of InGaAs/GaAsSb heterojunctions at varying band alignments and its implication on digital and analog applications

resolves10.1063/1.4933272

Material and device characteristics of InAs/GaAsSb sub-monolayer quantum dot solar cells

resolves10.1016/j.jcrysgro.2006.10.132

Growth of an InGaAs/GaAsSb tunnel junction for an InP-based low band gap tandem solar cell

resolves10.1109/68.998724

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1.31 μm GaAsSb resonant-cavity-enhanced separate absorption, charge and multiplication avalanche photodiodes with low noise

resolves10.1088/0268-1242/30/10/105033

Bandgap-engineered GaAsSb alloy nanowires for near-infrared photodetection at 1.31μm

resolves10.1063/1.112701

Temperature dependence of the direct band gap energy and donor–acceptor transition energies in Be-doped GaAsSb lattice matched to InP

resolves10.1143/JJAP.44.705

Optical Characterization of Heavily Sn-Doped GaAs1-xSbx Epilayers Grown by Molecular Beam Epitaxy on (001) GaAs Substrates

resolves10.1016/j.tsf.2010.07.060

Influence of Sb/As soak times on the structural and optical properties of GaAsSb/GaAs interfaces

resolves10.1063/1.367206

Photoluminescence studies on Si-doped GaAs/Ge

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Exciton Localization and Optical Properties Improvement in Nanocrystal-Embedded ZnO Core–Shell Nanowires

resolves10.1039/C5NR07252B

Transition of radiative recombination channels from delocalized states to localized states in a GaInP alloy with partial atomic ordering: a direct optical signature of Mott transition?

resolves10.1139/p84-043

Temperature dependence of the energy gap in semiconductors

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Temperature dependence of semiconductor band gaps

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Uniaxial tensile strain and exciton–phonon coupling in bent ZnO nanowires

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Characterization of photoluminescence intensity and efficiency of free excitons in semiconductor quantum well structures

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Influence of Exciton Localization on the Emission and Ultraviolet Photoresponse of ZnO/ZnS Core–Shell Nanowires

resolves10.1063/1.1759076

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resolves10.1103/PhysRevB.57.R2041

Localized exciton and its stimulated emission in surface mode from single-layer<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi>−</mml:mi><mml:mi>x</mml:mi></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">N</mml:mi></mml:math>

The 2 references without a DOI — listed, not checked

no DOI — not checkedLi, Q., Xu, S. J., Xie, M. H. & Tong, S. Y. Origin of the ‘S-shaped’ temperature dependence of luminescent peaks from semiconductors. J. Phys.: Condens. Matter. 17(30), 4853 (2005).

no DOI — not checkedWang, J., Zheng, C. C., Ning, J., Zhang, L. X., Li, W., Ni, Z. H., Yan, C., Wang, J. N. & Xu, S. J. Luminescence signature of free exciton dissociation and liberated electron transfer across the junction of graphene/GaN hybrid structure. Sci. Rep. 5(1), 168–177 (2015).

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