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First-principles Raman spectra of MoS2, WS2 and their heterostructures

https://doi.org/10.1039/c3nr06906k
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37/37 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 37 checked references that resolve
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Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>MoS</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> : A New Direct-Gap Semiconductor
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Temperature-dependent phonon shifts in monolayer MoS2
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Identification of individual and few layers of WS2 using Raman Spectroscopy
resolves10.1039/c3nr03052k
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Raman spectroscopy as a versatile tool for studying the properties of graphene
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Anomalous frequency trends in MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>thin films attributed to surface effects
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Effects of lower symmetry and dimensionality on Raman spectra in two-dimensional WSe<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
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<b><i>Ab initio</i></b>calculation of the lattice dynamics and phase diagram of boron nitride
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resolves10.1103/PhysRevB.84.155413
Phonons in single-layer and few-layer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>and WS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
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Special points for Brillouin-zone integrations
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Thickness and strain effects on electronic structures of transition metal dichalcogenides: 2H-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>M</mml:mi><mml:msub><mml:mi>X</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>semiconductors (<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>M</mml:mi></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>=</mml:mo></mml:math>Mo, W;<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>X</mml:mi></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mo>=</mml:mo></mml:math>S, Se, Te)
resolves10.1021/nl4030648
Electronic Structural Moiré Pattern Effects on MoS<sub>2</sub>/MoSe<sub>2</sub> 2D Heterostructures
resolves10.1103/PhysRevB.63.094305
Raman scattering intensities in α-quartz: A first-principles investigation
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<i>Ab initio</i>study of the vibrational properties of crystalline<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>TeO</mml:mi><mml:mn>2</mml:mn></mml:msub></mml:mrow></mml:math>: The<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>α</mml:mi></mml:mrow></mml:math>,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>β</mml:mi></mml:mrow></mml:math>, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi>γ</mml:mi></mml:mrow></mml:math>phases
resolves10.1103/PhysRevLett.78.4063
First-Principles Determination of the Soft Mode in Cubic<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>ZrO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
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Enhanced thermoelectric figure of merit in assembled graphene nanoribbons
resolves10.1063/1.4800777
Electronic and thermoelectric properties of assembled graphene nanoribbons with elastic strain and structural dislocation
resolves10.1038/srep01549
Novel hetero-layered materials with tunable direct band gaps by sandwiching different metal disulfides and diselenides
resolves10.1021/jp205116x
A Comparative Study of Lattice Dynamics of Three- and Two-Dimensional MoS<sub>2</sub>
resolves10.1103/PhysRevB.87.081307
Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:msub><mml:mrow/><mml:mn>2</mml:mn></mml:msub></mml:math>
resolves10.1039/C3NR06072A
MoS <sub>2</sub> /MX <sub>2</sub> heterobilayers: bandgap engineering <i>via</i> tensile strain or external electrical field
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