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Thickness dependence of surface energy and contact angle of water droplets on ultrathin MoS <sub>2</sub> films

https://doi.org/10.1039/c6cp00036c
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32/32 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 32 checked references that resolve
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Flat Chern Band in a Two-Dimensional Organometallic Framework
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Organic topological insulators in organometallic lattices
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Prediction of a Two-Dimensional Organic Topological Insulator
resolves10.1021/nl501106v
Surface Energy Engineering for Tunable Wettability through Controlled Synthesis of MoS<sub>2</sub>
resolves10.1103/PhysRevLett.86.4382
Charge Density Wave, Superconductivity, and Anomalous Metallic Behavior in 2D Transition Metal Dichalcogenides
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Atomically Thin <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:msub> <mml:mi>MoS</mml:mi> <mml:mn>2</mml:mn> </mml:msub> </mml:math> : A New Direct-Gap Semiconductor
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Large‐Scale Exfoliation of Inorganic Layered Compounds in Aqueous Surfactant Solutions
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High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects
resolves10.1063/1.4799172
Intrinsic carrier mobility of multi-layered MoS2 field-effect transistors on SiO2
resolves10.1021/nl2021575
Ambipolar MoS<sub>2</sub> Thin Flake Transistors
resolves10.1002/adma.201201909
High‐Detectivity Multilayer MoS<sub>2</sub> Phototransistors with Spectral Response from Ultraviolet to Infrared
resolves10.1021/nn3025173
Quantitative Raman Spectrum and Reliable Thickness Identification for Atomic Layers on Insulating Substrates
resolves10.1021/nl4010783
Thickness-Dependent Interfacial Coulomb Scattering in Atomically Thin Field-Effect Transistors
resolves10.1021/nn506138y
Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS<sub>2</sub> Layers
resolves10.1021/nl903868w
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resolves10.1021/nl301485q
MoS<sub>2</sub> Nanosheet Phototransistors with Thickness-Modulated Optical Energy Gap
resolves10.1038/nnano.2012.96
Control of valley polarization in monolayer MoS2 by optical helicity
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resolves10.1021/la5018328
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resolves10.1021/jp3080139
Diffraction from Disordered Stacking Sequences in MoS<sub>2</sub> and WS<sub>2</sub> Fullerenes and Nanotubes
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Van der Waals Density Functional for Layered Structures
resolves10.1016/j.jpowsour.2014.06.049
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Self-Assembly of Three-Dimensional Metal Islands: Nonstrained versus Strained Islands
The 3 references without a DOI — listed, not checked
no DOI — not checkedC6CP00036C-(cit10)/*[position()=1]
no DOI — not checkeded. W. Müller-Warmuth and R. Schöllhorn, Progress in Intercalation Research, Springer, New York, 1994, vol. 17, p. 50
no DOI — not checkedC6CP00036C-(cit33)/*[position()=1]
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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