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Interface engineering of graphene–silicon Schottky junction solar cells with an Al <sub>2</sub> O <sub>3</sub> interfacial layer grown by atomic layer deposition

https://doi.org/10.1039/c7ra13443f
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31/31 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 31 checked references that resolve
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The 3 references without a DOI — listed, not checked
no DOI — not checkedPhotocurrent suppression and interface state recombination in MIS-Schottky barriers , 1977 International Electron Devices Meeting , ed. Ng K. and Card H. , 1977 , pp. 57–61
no DOI — not checkedDetermination of optimum parameters and characterization of MIS solar cells , 1977 International Electron Devices Meeting , ed. Viktorovitch P. , Pananakakis G. , Kamarinos G. and Basset R. , 1977 , pp. 62–62
no DOI — not checkedJ. Schmidt , A.Merkle , R.Brendel , B.Hoex , M.Van De Sanden and W.Kessels , Surface passivation of high-efficiency silicon solar cells by atomic-layer-deposited Al2O3 , Progress in photovoltaics: research and applications , 2008 , 16 ( 6 ), pp. 461–466
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