Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 38 checked references that resolve
resolves10.1021/acsami.5b02790Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb<sub>0.8</sub>Ba<sub>0.2</sub>ZrO<sub>3</sub> Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases
resolves10.1038/ncomms3845Ferroelectric polymer networks with high energy density and improved discharged efficiency for dielectric energy storage
resolves10.1038/s41467-018-04189-6Giant energy density and high efficiency achieved in bismuth ferrite-based film capacitors via domain engineering
resolves10.1002/adma.201604427Ultrahigh Energy Storage Performance of Lead‐Free Oxide Multilayer Film Capacitors via Interface Engineering
resolves10.1021/ma2024057Novel Ferroelectric Polymers for High Energy Density and Low Loss Dielectrics
resolves10.1063/1.4887066Temperature-dependent energy storage properties of antiferroelectric Pb0.96La0.04Zr0.98Ti0.02O3 thin films
resolves10.1002/aenm.201400610Thin Hf<sub><i>x</i></sub>Zr<sub>1‐<i>x</i></sub>O<sub>2</sub> Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
resolves10.1002/aelm.201500052Giant Electric Energy Density in Epitaxial Lead‐Free Thin Films with Coexistence of Ferroelectrics and Antiferroelectrics
resolves10.3390/ma8125439Anti-Ferroelectric Ceramics for High Energy Density Capacitors
resolves10.1038/srep40916Enhancing dielectric permittivity for energy-storage devices through tricritical phenomenon
resolves10.1016/j.nanoen.2018.01.003Strongly enhanced dielectric and energy storage properties in lead-free perovskite titanate thin films by alloying
resolves10.1109/TUFFC.2012.2403Temperature-stable high-energy-density capacitors using complex perovskite thin films
resolves10.1039/b406012aStabilization and destabilization of zirconium propoxide precursors by acetylacetoneElectronic supplementary information (ESI) available: summary of 1H NMR spectra and CIF files for compounds 1 and 2. See http://www.rsc.org/suppdata/cc/b4/b406012a/
resolves10.1063/1.1767968High oxygen-pressure annealing effects on the ferroelectric and structural properties of PbZr0.3Ti0.7O3 thin films
resolves10.1016/j.actamat.2014.07.058Relationship between electromechanical properties and phase diagram in the Ba(Zr0.2Ti0.8)O3–x(Ba0.7Ca0.3)TiO3 lead-free piezoceramic
resolves10.1557/JMR.1997.0316X-ray photoelectron spectroscopy characterization of barium titanate ceramics prepared by the citric route. Residual carbon study
resolves10.1039/C7TC04284AControl of oxygen vacancies in ZnO nanorods by annealing and their influence on ZnO/PEDOT:PSS diode behaviour
resolves10.1063/1.3657783In-plane polarization anisotropy of ground state optical intensity in InAs/GaAs quantum dots
resolves10.1063/1.126216Characteristics of the surface layer of barium strontium titanate thin films deposited by laser ablation
resolves10.1063/1.1728308Effects of postanneal conditions on the dielectric properties of CaCu3Ti4O12 thin films prepared on Pt/Ti/SiO2/Si substrates
resolves10.1103/PhysRevB.62.228Oxygen-vacancy-related low-frequency dielectric relaxation and electrical conduction in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">B</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mo>:</mml:mo><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">r</mml:mi><mml:mi mathvariant="normal">T</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1063/1.2177430Leakage current of multiferroic (Bi0.6Tb0.3La0.1)FeO3 thin films grown at various oxygen pressures by pulsed laser deposition and annealing effect
resolves10.1111/jace.15983Ferroelectric and piezoelectric properties of Ba
<sub>0.85</sub>
Ca
<sub>0.15</sub>
Ti
<sub>0.90</sub>
Zr
<sub>0.10</sub>
O
<sub>3</sub>
films in 200 nm thickness range
resolves10.1063/1.3291044Oxygen concentration and its effect on the leakage current in BiFeO3 thin films
resolves10.1063/1.126898Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset
resolves10.1063/1.1498887Postsintering annealing induced extrinsic dielectric and piezoelectric responses in lead–zinc–niobate-based ferroelectric ceramics
resolves10.1103/PhysRevB.75.104103Ferroelectric polarization-leakage current relation in high quality epitaxial<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mi mathvariant="normal">Pb</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mi mathvariant="normal">Zr</mml:mi><mml:mo>,</mml:mo><mml:mi mathvariant="normal">Ti</mml:mi><mml:mo>)</mml:mo></mml:mrow><mml:msub><mml:mi mathvariant="normal">O</mml:mi><mml:mn>3</mml:mn></mml:msub></mml:mrow></mml:math>films
resolves10.1111/jace.13560Strong Effect of Oxygen Partial Pressure on Electrical Properties of 0.5Ba(Zr
<sub>0.2</sub>
Ti
<sub>0.8</sub>
)O
<sub>3</sub>
–0.5(Ba
<sub>0.7</sub>
Ca
<sub>0.3</sub>
)TiO
<sub>3</sub>
Thin Films
resolves10.1063/1.4829064Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
resolves10.1063/1.2186074Polarization fatigue and frequency-dependent recovery in Pb(Zr,Ti)O3 epitaxial thin films with SrRuO3 electrodes
resolves10.1063/1.359572Electrical properties of ferroelectric thin-film capacitors with hybrid (Pt,RuO2) electrodes for nonvolatile memory applications
resolves10.1063/1.3056603Polarization fatigue in ferroelectric thin films and related materials
resolves10.1063/1.1381542Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features
The 5 references without a DOI — listed, not checked
no DOI — not checkedC. Sanchez , F.Babonnean , S.Docuff , A.Leausin , J. D.Mackenzie and D. R.Ulrich , Ultra structure processing of advanced ceramics , Wiley , New York , 1988 , p. 77
no DOI — not checkedC9TC00569B-(cit18)/*[position()=1]
no DOI — not checkedC9TC00569B-(cit29)/*[position()=1]
no DOI — not checkedC9TC00569B-(cit37)/*[position()=1]
no DOI — not checkedC9TC00569B-(cit43)/*[position()=1]
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