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Superior energy storage performance and fatigue resistance in ferroelectric BCZT thin films grown in an oxygen-rich atmosphere

https://doi.org/10.1039/c9tc00569b
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38/38 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

5 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 38 checked references that resolve
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Large Energy Storage Density and High Thermal Stability in a Highly Textured (111)-Oriented Pb<sub>0.8</sub>Ba<sub>0.2</sub>ZrO<sub>3</sub> Relaxor Thin Film with the Coexistence of Antiferroelectric and Ferroelectric Phases
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Thin Hf<sub><i>x</i></sub>Zr<sub>1‐<i>x</i></sub>O<sub>2</sub> Films: A New Lead‐Free System for Electrostatic Supercapacitors with Large Energy Storage Density and Robust Thermal Stability
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High oxygen-pressure annealing effects on the ferroelectric and structural properties of PbZr0.3Ti0.7O3 thin films
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Relationship between electromechanical properties and phase diagram in the Ba(Zr0.2Ti0.8)O3–x(Ba0.7Ca0.3)TiO3 lead-free piezoceramic
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Effects of postanneal conditions on the dielectric properties of CaCu3Ti4O12 thin films prepared on Pt/Ti/SiO2/Si substrates
resolves10.1103/PhysRevB.62.228
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resolves10.1063/1.2177430
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Ferroelectric and piezoelectric properties of Ba <sub>0.85</sub> Ca <sub>0.15</sub> Ti <sub>0.90</sub> Zr <sub>0.10</sub> O <sub>3</sub> films in 200 nm thickness range
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Oxygen concentration and its effect on the leakage current in BiFeO3 thin films
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Vacancy formation in (Pb,La)(Zr,Ti)O3 capacitors with oxygen deficiency and the effect on voltage offset
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Postsintering annealing induced extrinsic dielectric and piezoelectric responses in lead–zinc–niobate-based ferroelectric ceramics
resolves10.1103/PhysRevB.75.104103
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resolves10.1111/jace.13560
Strong Effect of Oxygen Partial Pressure on Electrical Properties of 0.5Ba(Zr <sub>0.2</sub> Ti <sub>0.8</sub> )O <sub>3</sub> –0.5(Ba <sub>0.7</sub> Ca <sub>0.3</sub> )TiO <sub>3</sub> Thin Films
resolves10.1063/1.4829064
Wake-up effects in Si-doped hafnium oxide ferroelectric thin films
resolves10.1063/1.2186074
Polarization fatigue and frequency-dependent recovery in Pb(Zr,Ti)O3 epitaxial thin films with SrRuO3 electrodes
resolves10.1063/1.359572
Electrical properties of ferroelectric thin-film capacitors with hybrid (Pt,RuO2) electrodes for nonvolatile memory applications
resolves10.1063/1.3056603
Polarization fatigue in ferroelectric thin films and related materials
resolves10.1063/1.1381542
Polarization fatigue in ferroelectric films: Basic experimental findings, phenomenological scenarios, and microscopic features
The 5 references without a DOI — listed, not checked
no DOI — not checkedC. Sanchez , F.Babonnean , S.Docuff , A.Leausin , J. D.Mackenzie and D. R.Ulrich , Ultra structure processing of advanced ceramics , Wiley , New York , 1988 , p. 77
no DOI — not checkedC9TC00569B-(cit18)/*[position()=1]
no DOI — not checkedC9TC00569B-(cit29)/*[position()=1]
no DOI — not checkedC9TC00569B-(cit37)/*[position()=1]
no DOI — not checkedC9TC00569B-(cit43)/*[position()=1]
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