Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 50 checked references that resolve
resolves10.1038/nature26154Correlated insulator behaviour at half-filling in magic-angle graphene superlattices
resolves10.1038/nature26160Unconventional superconductivity in magic-angle graphene superlattices
resolves10.1038/nnano.2016.85Coherent commensurate electronic states at the interface between misoriented graphene layers
resolves10.1038/nphys1463Observation of Van Hove singularities in twisted graphene layers
resolves10.1038/nnano.2016.214Helical edge states and fractional quantum Hall effect in a graphene electron–hole bilayer
resolves10.1038/ncomms10699Selectively enhanced photocurrent generation in twisted bilayer graphene with van Hove singularity
resolves10.1002/adfm.201605927Synchronous Growth of High‐Quality Bilayer Bernal Graphene: From Hexagonal Single‐Crystal Domains to Wafer‐Scale Homogeneous Films
resolves10.1021/nl303879kGrowth of Adlayer Graphene on Cu Studied by Carbon Isotope Labeling
resolves10.1021/nn5049188Equilibrium Chemical Vapor Deposition Growth of Bernal-Stacked Bilayer Graphene
resolves10.1038/nnano.2015.322Oxygen-activated growth and bandgap tunability of large single-crystal bilayer graphene
resolves10.1021/acs.jpcc.6b04105Cooling Growth of Millimeter-Size Single-Crystal Bilayer Graphene at Atmospheric Pressure
resolves10.1021/acs.nanolett.6b02826Stranski–Krastanov and Volmer–Weber CVD Growth Regimes To Control the Stacking Order in Bilayer Graphene
resolves10.1021/acsnano.0c00645Isothermal Growth and Stacking Evolution in Highly Uniform Bernal-Stacked Bilayer Graphene
resolves10.1021/nl902515kEvolution of Graphene Growth on Ni and Cu by Carbon Isotope Labeling
resolves10.1021/acs.jpcc.5b00340Quantum Chemical Molecular Dynamics Studies of Bilayer Graphene Growth on a Ni(111) Surface
resolves10.1063/1.4729150Graphene monolayer rotation on Ni(111) facilitates bilayer graphene growth
resolves10.1021/nn300625yNickel Carbide as a Source of Grain Rotation in Epitaxial Graphene
resolves10.1021/nl103383bGraphene Growth on Ni(111) by Transformation of a Surface Carbide
resolves10.1021/ja405499xRole of Hydrogen in Graphene Chemical Vapor Deposition Growth on a Copper Surface
resolves10.1021/nn303674gKinetic Control of Catalytic CVD for High-Quality Graphene at Low Temperatures
resolves10.1016/0927-0256(96)00008-0Efficiency of ab-initio total energy calculations for metals and semiconductors using a plane-wave basis set
resolves10.1021/jp106469xImproved Description of the Structure of Molecular and Layered Crystals: Ab Initio DFT Calculations with van der Waals Corrections
resolves10.1039/C8NR10142FPhotocatalytic performance of few-layer graphitic C
<sub>3</sub>
N
<sub>4</sub>
: enhanced by interlayer coupling
resolves10.1063/1.1329672A climbing image nudged elastic band method for finding saddle points and minimum energy paths
resolves10.1021/jp9035056Development and Validation of ReaxFF Reactive Force Field for Hydrocarbon Chemistry Catalyzed by Nickel
resolves10.1063/1.442716A computer simulation method for the calculation of equilibrium constants for the formation of physical clusters of molecules: Application to small water clusters
resolves10.1021/nl902948mLocalization of Dirac Electrons in Rotated Graphene Bilayers
resolves10.1021/jp212149cMolecular Dynamics Simulation of Chemical Vapor Deposition Graphene Growth on Ni (111) Surface
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