Every reference with a DOI in the deposited reference list resolved to a known
work in Crossref or DataCite at the dated check, and none carried a retraction,
withdrawal, or removal notice.
The 41 checked references that resolve
resolves10.1088/1361-6528/abed74Enhanced acetone sensing properties based on
<i>in situ</i>
growth SnO
<sub>2</sub>
nanotube arrays
resolves10.1016/j.snb.2021.129667Selectively enhanced gas-sensing performance to n-butanol based on uniform CdO-decorated porous ZnO nanobelts
resolves10.1364/PRJ.8.000091Nonequilibrium hot-electron-induced wavelength-tunable incandescent-type light sources
resolves10.3788/COL201917.113101Effect of annealing on the damage threshold and optical properties of HfO2/Ta2O5/SiO2 high-reflection film
resolves10.1063/1.3674287Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
resolves10.1021/ja01123a039Polymorphism of Ga<sub>2</sub>O<sub>3</sub> and the System Ga<sub>2</sub>O<sub>3</sub>—H<sub>2</sub>O
resolves10.1063/1.4879800High-voltage field effect transistors with wide-bandgap <i>β</i>-Ga2O3 nanomembranes
resolves10.1039/C5CE01106JHomo- and heteroepitaxial growth of Sn-doped β-Ga
<sub>2</sub>
O
<sub>3</sub>
layers by MOVPE
resolves10.1063/5.0027870Sn doping of (010) β-Ga2O3 films grown by plasma-assisted molecular beam epitaxy
resolves10.7567/APEX.8.015503Homoepitaxial growth of β-Ga<sub>2</sub>O<sub>3</sub>layers by halide vapor phase epitaxy
resolves10.1116/6.0000360High-temperature low-pressure chemical vapor deposition of β-Ga2O3
resolves10.7567/APEX.11.031101Low-pressure CVD-grown β-Ga<sub>2</sub>O<sub>3</sub>bevel-field-plated Schottky barrier diodes
resolves10.1016/j.mtphys.2020.100226P-type β-Ga2O3 metal-semiconductor-metal solar-blind photodetectors with extremely high responsivity and gain-bandwidth product
resolves10.1039/C7CE01076AOne-step exfoliation of ultra-smooth β-Ga
<sub>2</sub>
O
<sub>3</sub>
wafers from bulk crystal for photodetectors
resolves10.1039/C8CE02189ASolid–liquid interface optimization and properties of ultra-wide bandgap β-Ga
<sub>2</sub>
O
<sub>3</sub>
grown by Czochralski and EFG methods
resolves10.1039/D0CE00683AA study on the technical improvement and the crystalline quality optimization of columnar β-Ga
<sub>2</sub>
O
<sub>3</sub>
crystal growth by an EFG method
resolves10.1143/JJAP.47.8506Growth of β-Ga<sub>2</sub>O<sub>3</sub> Single Crystals by the Edge-Defined, Film Fed Growth Method
resolves10.1039/C9CE01294JInhibition of volatilization and polycrystalline cracking, and the optical properties of β-Ga
<sub>2</sub>
O
<sub>3</sub>
grown by the EFG method
resolves10.1063/5.0043903Wide range temperature-dependent (80–630 K) study of Hall effect and the Seebeck coefficient of <b>
<i>β</i>
</b>-Ga2O3 single crystals
resolves10.1103/PhysRev.140.A316Optical Absorption and Photoconductivity in the Band Edge of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1103/PhysRevB.68.155207Donor structure and electric transport mechanism in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>β</mml:mi><mml:mo>−</mml:mo><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mrow><mml:mn>3</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>
resolves10.1063/1.4816759Correlation between blue luminescence intensity and resistivity in <i>β</i>-Ga2O3 single crystals
resolves10.1038/s41598-018-36676-7Incident wavelength and polarization dependence of spectral shifts in β-Ga2O3 UV photoluminescence
resolves10.1016/j.jallcom.2018.04.196The influence of sputtering power on the structural, morphological and optical properties of β-Ga2O3 thin films
resolves10.1088/0022-3727/35/5/304Optical and luminescent properties of undoped and rare-earth-doped Ga<sub>2</sub>O<sub>3</sub>thin films deposited by spray pyrolysis
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