Reference health

Nature of band bending at semiconductor surfaces by contactless electroreflectance

https://doi.org/10.1063/1.107335
CiteStamped reference-health badge
14/14 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

2 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 14 checked references that resolve
resolves10.1117/12.931700
<title>Modulation Spectroscopy As A Technique For Semiconductor Characterization</title>
resolves10.1149/1.2096213
Electro‐optical Investigation of the Potential Drop at III/V Semiconductor/Electrolyte Interfaces
resolves10.1116/1.585748
<i>I</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> photoreflectance study of the effects of sputter/annealing on the Fermi level at (001) <i>n</i>- and <i>p</i>-type GaAs surfaces
resolves10.1117/12.947409
Modulation Spectroscopy Of Semiconductor Microstructures: An Overview
resolves10.1117/12.20833
Modulation spectroscopy of semiconductor materials, interfaces, and microstructures: an overview
resolves10.1063/1.102536
Characterization of GaAs/Ga1−<i>x</i>Al<i>x</i>As heterojunction bipolar transistor structures using photoreflectance
resolves10.1117/12.20870
Photoreflectance of GaAs/Ga1-xAlxAs heterojunction bipolar transistor structures
resolves10.1063/1.99088
Electron beam electroreflectance studies of GaAs and CdTe surfaces
resolves10.1117/12.20835
Discussion of modulation mechanisms in electron-beam electroreflectance and comparison to alternative modulation techniques
resolves10.1063/1.106051
Novel contactless mode of electroreflectance
resolves10.1117/12.20834
Optical anisotropies in electromodulation
resolves10.1063/1.349687
Contactless electrical characterization and realization of <i>p</i>-type ZnSe
resolves10.1063/1.102952
Optically induced electromagnetic radiation from semiconductor surfaces
resolves10.1063/1.336070
GaAs, AlAs, and Al<i>x</i>Ga1−<i>x</i>As: Material parameters for use in research and device applications
The 2 references without a DOI — listed, not checked
no DOI — not checked2024020303454474300_r1
no DOI — not checked2024020303454474300_r15
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-22 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

view as graph · paper page

Embed this badge

Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.

<a href="https://citestamp.com/citestamped/10.1063/1.107335"><img src="https://citestamp.com/citestamped/10.1063/1.107335/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[![CiteStamped reference-health badge](https://citestamp.com/citestamped/10.1063/1.107335/badge.svg)](https://citestamp.com/citestamped/10.1063/1.107335)