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Voltage-dependent dielectric breakdown and voltage-controlled negative resistance in anodized Al–Al2O3–Au diodes

https://doi.org/10.1063/1.1287116
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25/25 checkable references clean · checked 2026-07-24

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

8 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 25 checked references that resolve
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Switching and breakdown in films
resolves10.1080/00018737200101318
A theory of localized electronic breakdown in insulating films
resolves10.1116/1.569344
Breakdown in silicon oxide−A review
resolves10.1016/0040-6090(83)90158-X
Mechanisms of electrical breakdown in thin insulators—An open subject
resolves10.1149/1.2404268
Dielectric Breakdown in Silicon Dioxide Films on Silicon
resolves10.1063/1.352936
Impact ionization, trap creation, degradation, and breakdown in silicon dioxide films on silicon
resolves10.1088/0034-4885/33/3/306
Electrical phenomena in amorphous oxide films
resolves10.1016/S0042-207X(76)81130-X
Metal-insulator-metal sandwich structures with anomalous properties
resolves10.1016/S0042-207X(80)80057-1
The thin film metal-insulator-metal system used as a non-heated source of electrons
resolves10.1080/00207218408938882
Invited paper A critical review of the observed electrical properties of MIM devices showing VCNR
resolves10.1002/pssa.2211080102
Bistable switching in electroformed metal–insulator–metal devices
resolves10.1063/1.125214
Polarization measurements in anodized Al–Al2O3–Au diodes
resolves10.1063/1.373474
Polarization and Fowler–Nordheim tunneling in anodized Al–Al2O3–Au diodes
resolves10.1007/BF01589814
The influence of technological conditions on electrical properties of MIM systems
resolves10.1063/1.1702530
Low-Frequency Negative Resistance in Thin Anodic Oxide Films
resolves10.1080/00207219008921179
Measurement techniques in MIM device characterization
resolves10.1063/1.1713823
Potential Distribution and Negative Resistance in Thin Oxide Films
resolves10.1080/14786436708229693
Forming process in evaporated SiO thin films
resolves10.1016/0022-3093(70)90097-9
A model for filament growth and switching in amorphous oxide films
resolves10.1016/0022-3093(72)90025-7
A new filamentary model for voltage formed amorphous oxide films
resolves10.1016/0040-6090(94)90022-1
Derivation of the current-voltage characteristics in filamentary conductors as a function of the distribution of filament cross-sectional areas
resolves10.1063/1.1659185
Photoemission of Holes and Electrons from Aluminum into Aluminum Oxide
resolves10.1002/pssa.2210370102
Results and problems of internal photoemission in sandwich structures
resolves10.1063/1.1702801
Impurity Conduction and Negative Resistance in Thin Oxide Films
resolves10.1063/1.1714372
Electron Emission, Electroluminescence, and Voltage-Controlled Negative Resistance in Al–Al2O3–Au Diodes
The 8 references without a DOI — listed, not checked
no DOI — not checked2024021103110856600_r1
no DOI — not checked2024021103110856600_r4
no DOI — not checked2024021103110856600_r7
no DOI — not checked2024021103110856600_r8
no DOI — not checked2024021103110856600_r16
no DOI — not checked2024021103110856600_r17
no DOI — not checked2024021103110856600_r30
no DOI — not checked2024021103110856600_r31
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