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Electroreflectance and surface photovoltage spectroscopies of semiconductor structures using an indium–tin–oxide-coated glass electrode in soft contact mode
56/56 checkable references clean · checked 2026-07-22
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
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The 56 checked references that resolve
resolves10.1016/S0167-5729(99)00002-3
Surface photovoltage phenomena: theory, experiment, and applications
resolves10.1016/0039-6028(73)90337-3
Third-derivative modulation spectroscopy with low-field electroreflectance
resolves10.1103/PhysRevLett.28.913
Linearized Third-Derivative Spectroscopy with Depletion-Barrier Modulation
resolves10.1117/12.20833
Modulation spectroscopy of semiconductor materials, interfaces, and microstructures: an overview
resolves10.1016/0022-3697(70)90103-4
Transverse electroreflectance in semi-insulating silicon and gallium arsenide
resolves10.1016/0039-6028(73)90338-5
Interband critical-point symmetry from electroreflectance spectra
resolves10.1063/1.1150550
Nondestructive electroluminescence characterization of as-grown semiconductor optoelectronic device structures using indium–tin–oxide coated electrodes
resolves10.1063/1.1728351
A Method for the Measurement of Short Minority Carrier Diffusion Lengths in Semiconductors
resolves10.1016/0039-6028(73)90122-2
Surface photovoltage and internal photoemission at the anodized InSb surface
resolves10.1016/0039-6028(77)90056-5
Determination of surface state parameters from surface photovoltage transients
resolves10.1063/1.325610
Derivative surface photovoltage spectroscopy; a new approach to the study of absorption in semiconductors: GaAs
resolves10.1149/1.2048494
Errors and Error‐Avoidance in the Schottky Coupled Surface Photovoltage Technique
resolves10.1103/PhysRevB.50.1739
Distinction between surface and bulk states in surface-photovoltage spectroscopy
resolves10.1063/1.109751
Laser surface photovoltage spectroscopy: A new tool for the determination of surface state distributions
resolves10.1063/1.121527
Surface photovoltage spectroscopy of n-n+ and p-n+ AlGaAs/GaAs heterojunctions
resolves10.1063/1.366807
Surface photovoltage spectroscopy of an InGaAs/GaAs/AlGaAs single quantum well laser structure
resolves10.1016/S0038-1098(97)00114-2
Observation of excitonic features in multiple quantum wells by normalized Kelvin probe spectroscopy at low temperatures
resolves10.1063/1.122544
Photovoltage and photoreflectance spectroscopy of InAs/GaAs self-organized quantum dots
resolves10.1143/JJAP.21.624
Observation of p-n Junctions with a Flying-Spot Scanner Using a Chopped Photon Beam
resolves10.1088/0022-3735/21/1/017
A scanning photon microscope for non-destructive observations of crystal defect and interface trap distributions in silicon wafers
resolves10.1149/1.2127325
Electronic Characterization of Heteroepitaxial Silicon‐on‐Sapphire by Surface Photovoltage Spectroscopy
resolves10.1088/0268-1242/7/11/007
Defect-related transitions in Zn<sub>3</sub>P<sub>2</sub>studied by means of photovoltaic effect spectroscopy
resolves10.1016/S0022-3697(96)00105-9
A comparative study of transition states of porous silicon by surface photovoltage spectroscopy and time-resolved photoluminescence spectroscopy
resolves10.1016/S0040-6090(96)08857-8
Surface photovoltaic characterizations of porous silicon layers
resolves10.1063/1.119552
Determination of the surface recombination velocity of semiconductor by surface photovoltaic measurement
resolves10.1103/PhysRevB.45.1638
High-precision determination of the temperature dependence of the fundamental energy gap in gallium arsenide
The 17 references without a DOI — listed, not checked
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no DOI — not checked2024020712013538600_r69
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