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Optical characterization of intersubband transitions in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multiple quantum well structures by contactless electroreflectance

https://doi.org/10.1063/1.2405385
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14/14 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

6 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 14 checked references that resolve
resolves10.1063/1.354252
Quantum-well infrared photodetectors
resolves10.1088/0034-4885/64/11/204
Recent progress in quantum cascade lasers and applications
resolves10.1063/1.1606875
Band offset determination of Zn0.53Cd0.47Se/Zn0.29Cd0.24Mg0.47Se
resolves10.1116/1.1878992
Optical characterization and evaluation of the conduction band offset for ZnCdSe∕ZnMgSe quantum wells grown on InP(001) by molecular-beam epitaxy
resolves10.1063/1.2354578
Midinfrared intersubband absorption in ZnxCd1−xSe∕Znx′Cdy′Mg1−x′−y′Se multiple quantum well structures
resolves10.1016/0927-796X(93)90004-M
Modulation spectroscopy of semiconductors: bulk/thin film, microstructures, surfaces/interfaces and devices
resolves10.1063/1.350570
Characterization of GaAs/Al<i>x</i>Ga1−<i>x</i>As multiple quantum well infrared detector structures using photoreflectance
resolves10.1016/S0042-207X(96)00274-6
Photoreflectance investigations of complex structures
resolves10.1002/pssa.200460900
Non‐destructive, room temperature characterization of wafer‐sized III–V semiconductor device structures using contactless electromodulation and wavelength‐modulated surface photovoltage spectroscopy
resolves10.1063/1.120980
Quality improvements of ZnxCdyMg1−x−ySe layers grown on InP substrates by a thin ZnCdSe interfacial layer
resolves10.1116/1.590734
Defect reduction of ZnxCdyMg1−x−ySe based structures grown on InP by using Zn irradiation of the III–V surface
resolves10.1002/pssb.200564722
Zn<sub><i>x</i></sub>Cd<sub>1–<i>x</i></sub>Se/Zn<sub><i>x</i>′</sub>Cd<sub><i>y</i>′</sub>Mg<sub>1–<i>x</i>′–<i>y</i>′</sub>Se multi‐quantum well structures for intersubband devices grown by MBE
resolves10.1103/PhysRevB.56.4037
Spectral ellipsometry investigation of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Zn</mml:mi></mml:mrow><mml:mrow><mml:mn>0.53</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Cd</mml:mi></mml:mrow><mml:mrow><mml:mn>0.47</mml:mn></mml:mrow></mml:msub></mml:mrow><mml:mi mathvariant="normal">Se</mml:mi></mml:math>lattice matched to InP
resolves10.1109/JQE.1986.1073186
Electronic states in semiconductor heterostructures
The 6 references without a DOI — listed, not checked
no DOI — not checkedIntersubband Transitions in Quantum Wells: Physics and Device Applications I and II
no DOI — not checkedThe Spectroscopy of Semiconductors
no DOI — not checkedGroup III Nitride Semiconductor Compounds
no DOI — not checkedModulation Spectroscopy
no DOI — not checkedII-VI Semiconductor Materials and Their Applications
no DOI — not checkedWave Mechanics applied to Semiconductor Heterostructures
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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