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X-ray photoelectron spectroscopic study of the formation of catalytic gold nanoparticles on ultraviolet-ozone oxidized GaAs(100) substrates

https://doi.org/10.1063/1.2743729
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32/32 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

7 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 32 checked references that resolve
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Semiconductor nanowire heterostructures
resolves10.1038/nmat1220
Solid-phase diffusion mechanism for GaAs nanowire growth
resolves10.1126/science.270.5243.1791
Solution-Liquid-Solid Growth of Crystalline III-V Semiconductors: An Analogy to Vapor-Liquid-Solid Growth
resolves10.1088/0957-4484/14/12/004
Fabrication of individually seeded nanowire arrays by vapour–liquid–solid growth
resolves10.1063/1.1532772
Growth of Au-catalyzed ordered GaAs nanowire arrays by molecular-beam epitaxy
resolves10.1016/j.apsusc.2006.05.113
The formation of supported monodisperse Au nanoparticles by UV/ozone oxidation process
resolves10.1116/1.573115
UV/ozone cleaning of surfaces
resolves10.1116/1.577680
III–V surface processing
resolves10.1063/1.459325
Ultraviolet-light-induced oxide formation on GaAs surfaces
resolves10.1063/1.1340025
Adsorption of atomic oxygen on GaAs(001)-(2×4) and the resulting surface structures
resolves10.1063/1.1614209
Displacement of surface arsenic atoms by insertion of oxygen atoms into As–Ga backbonds
resolves10.1063/1.1315599
Relative reactivity of arsenic and gallium dimers and backbonds during the adsorption of molecular oxygen on GaAs(100)(6×6)
resolves10.1063/1.1315600
Chemically selective adsorption of molecular oxygen on GaAs(100)c(2×8)
resolves10.1016/0039-6028(90)90166-6
Atomic movement during the oxidation of GaAs
resolves10.1103/PhysRevB.49.11159
Oxides on GaAs and InAs surfaces: An x-ray-photoelectron-spectroscopy study of reference compounds and thin oxide layers
resolves10.1116/1.586539
Ultraviolet-ozone oxidation of GaAs(100) and InP(100)
resolves10.1016/S0169-4332(99)00599-1
UV/ozone-activated growth of oxide layers on InAs(001) surfaces and oxide desorption under arsenic pressure
resolves10.1103/PhysRevB.46.13260
Electronic structure of binary and ternary Ga or As oxides
resolves10.1149/1.2128789
An X‐Ray Photoelectron Spectroscopy Study of Native Oxides on GaAs
resolves10.1063/1.93884
X-ray photoelectron spectroscopic study of the oxide removal mechanism of GaAs (100) molecular beam epitaxial substrates in <i>i</i> <i>n</i> <i>s</i> <i>i</i> <i>t</i> <i>u</i> heating
resolves10.1063/1.120595
Room-temperature oxidation of a GaAs(001) surface induced by the interaction of hyperthermal atomic oxygen and studied by x-ray photoelectron spectroscopy and ion scattering spectroscopy
resolves10.1116/1.586703
Ammonia plasma passivation of GaAs in downstream microwave and radio-frequency parallel plate plasma reactors
resolves10.1116/1.577571
The thermal oxidation of AlGaAs
resolves10.1016/S0013-4686(00)00618-6
XPS analysis of wet chemical etching of GaAs(110) by Br2–H2O: comparison of emersion and model experiments
resolves10.1116/1.573770
An x-ray photoelectron spectroscopy study on ozone treated GaAs surfaces
resolves10.1016/S0169-4332(01)00583-9
An X-ray photoelectron spectroscopy study of the oxides of GaAs
resolves10.1063/1.104397
GaAs-oxide removal using an electron cyclotron resonance hydrogen plasma
resolves10.1143/JJAP.31.3981
X-Ray Photoelectron Spectroscopic Analysis of the Oxide of GaAs
resolves10.1143/JJAP.31.L721
Characterization of Oxidized GaAs (001) Surfaces Using Temperature Programed Desorption and X-Ray Photoelectron Spectroscopy
resolves10.1016/S0040-6090(02)00316-4
Monitoring epiready semiconductor wafers
resolves10.1016/0039-6028(86)90889-7
On the oxidation of III–V compound semiconductors
resolves10.1016/0039-6028(94)90059-0
Investigations of Pd clusters by the combined use of HREM, STM, high-energy spectroscopies and tunneling conductance measurements
The 7 references without a DOI — listed, not checked
no DOI — not checked2023080505040187600_c1
no DOI — not checked2023080505040187600_c19
no DOI — not checked2023080505040187600_c20
no DOI — not checked2023080505040187600_c23
no DOI — not checkedAppl. Phys. Lett.
no DOI — not checkedData from NIST IMFP calculator based on data from Ashley, Tung, Ritchie, and Anderson, U.S. Air Force Report No. RADC-TR-76–350.
no DOI — not checkedCRC Handbook of Chemistry and Physics
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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