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Structure and Energetics of Si Nanocrystals Embedded in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>a</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:msub><mml:mrow><mml:mi mathvariant="normal">S</mml:mi><mml:mi mathvariant="normal">i</mml:mi><mml:mi mathvariant="normal">O</mml:mi></mml:mrow><mml:mn>2</mml:mn></mml:msub></mml:math>
Origin of Fine Structure in Si<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>2</mml:mn><mml:mi>p</mml:mi></mml:math>Photoelectron Spectra at Silicon Surfaces and Interfaces
Structure and Energetics of the Si-<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi>SiO</mml:mi></mml:mrow><mml:mrow><mml:mn>2</mml:mn></mml:mrow></mml:msub></mml:mrow></mml:math>Interface
Oxidation of Si during the growth of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mi>SiO</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:msub></mml:mrow></mml:math>by ion-beam sputter deposition:<i>In situ</i>x-ray photoelectron spectroscopy as a function of oxygen partial pressure and deposition temperature
Ultrathin (&lt;4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits
Temperature-dependent carrier recombination processes in nanocrystalline Si/SiO<sub>2</sub> multilayers studied by continuous-wave and time-resolved photoluminescence
Thermal crystallization of amorphous Si/SiO2 superlattices
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