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ZnO grown by atomic layer deposition: A material for transparent electronics and organic heterojunctions
22/22 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
6 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 22 checked references that resolve
resolves10.1063/1.124223
High contrast, ultrafast optically addressed ultraviolet light modulator based upon optical anisotropy in ZnO films grown on <i>R</i>-plane sapphire
resolves10.1063/1.1790587
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
resolves10.1016/j.jcrysgro.2007.10.010
Controlling of preferential growth mode of ZnO thin films grown by atomic layer deposition
resolves10.12693/APhysPolA.112.401
Extra-Low Temperature Growth of ZnO by Atomic Layer Deposition with Diethylzinc Precursor
resolves10.1016/j.tsf.2004.10.015
Comparison between ZnO films grown by atomic layer deposition using H2O or O3 as oxidant
resolves10.1149/1.2221770
Characteristics of ZnO Thin Films by Means of Plasma-Enhanced Atomic Layer Deposition
resolves10.1109/JSSC.2003.818147
512-Mb PROM with a three-dimensional array of diode/antifuse memory cells
resolves10.1063/1.1618382
Activation and diffusion studies of ion-implanted p and n dopants in germanium
resolves10.1063/1.1835991
Hydrogen-doped high conductivity ZnO films deposited by radio-frequency magnetron sputtering
resolves10.1063/1.1534627
Transparent thin film transistors using ZnO as an active channel layer and their electrical properties
resolves10.1016/j.tsf.2006.09.007
Effects of substrate temperature on the microstructure and photoluminescence properties of ZnO thin films prepared by atomic layer deposition
resolves10.1016/S0022-2313(04)00142-5
Photoluminescence Studies of ZnO thin films grown by atomic layer epitaxy
resolves10.1063/1.2830940
Electrical behavior of zinc oxide layers grown by low temperature atomic layer deposition
resolves10.1063/1.1470703
Effect of hydrogen doping on ultraviolet emission spectra of various types of ZnO
resolves10.1063/1.1452778
Effects of intentionally introduced hydrogen on the electrical properties of ZnO layers grown by metalorganic chemical vapor deposition
resolves10.1103/PhysRevB.63.075205
Intrinsic<i>n</i>-type versus<i>p</i>-type doping asymmetry and the defect physics of ZnO
The 6 references without a DOI — listed, not checked
no DOI — not checked2023080209325168900_c5
no DOI — not checkedMicroelectron. J.
no DOI — not checked2023080209325168900_c11
no DOI — not checkedJ. Cryst. Growth
no DOI — not checked2023080209325168900_c28
no DOI — not checkedZinc Oxide, Bulk, Thin Films and Nanostructures, Processing, Properties and Applications
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