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Graphene growth by molecular beam epitaxy on the carbon-face of SiC

20/20 checkable references clean · checked 2026-07-25

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 20 checked references that resolve

resolves10.1016/S0039-6028(99)00891-2

High-temperature graphitization of the 6H-SiC (0001) face

resolves10.1088/0953-8984/20/32/323202

The growth and morphology of epitaxial multilayer graphene

resolves10.1126/science.1102896

Electric Field Effect in Atomically Thin Carbon Films

resolves10.1021/nl801827v

Large Area, Few-Layer Graphene Films on Arbitrary Substrates by Chemical Vapor Deposition

resolves10.1016/j.susc.2008.08.037

Graphene on metal surfaces

resolves10.1103/PhysRevB.77.155303

Interaction, growth, and ordering of epitaxial graphene on SiC{0001} surfaces: A comparative photoelectron spectroscopy study

resolves10.1103/PhysRevB.77.165415

Rotational disorder in few-layer graphene films on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mtext>−</mml:mtext><mml:mi mathvariant="normal">Si</mml:mi><mml:mi mathvariant="normal">C</mml:mi><mml:mrow><mml:mo>(</mml:mo><mml:mn>000</mml:mn><mml:mtext>−</mml:mtext><mml:mn>1</mml:mn><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>: A scanning tunneling microscopy study

resolves10.1103/PhysRevB.78.153412

Graphene-substrate interaction on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:mn>6</mml:mn><mml:mi>H</mml:mi><mml:mtext>-SiC</mml:mtext><mml:mrow><mml:mo>(</mml:mo><mml:mrow><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo stretchy="false">¯</mml:mo></mml:mover></mml:mrow><mml:mo>)</mml:mo></mml:mrow></mml:mrow></mml:math>: A scanning tunneling microscopy study

resolves10.1088/0022-3727/43/37/374006

Multilayer epitaxial graphene grown on the surface; structure and electronic properties

resolves10.1002/pssa.200982412

Graphene growth by molecular beam epitaxy using a solid carbon source

resolves10.1063/1.3265916

Low temperature growth of epitaxial graphene on SiC induced by carbon evaporation

resolves10.1063/1.3242029

Graphitic carbon growth on Si(111) using solid source molecular beam epitaxy

resolves10.1143/JJAP.49.04DH13

Thin Graphitic Structure Formation on Various Substrates by Gas-Source Molecular Beam Epitaxy Using Cracked Ethanol

resolves10.1088/0268-1242/24/12/125014

Atomic scale flattening, step formation and graphitization blocking on 6H- and 4H-SiC{0 0 0 1} surfaces under Si flux

resolves10.1088/0953-8984/21/13/134016

Epitaxial graphene on SiC(0001) and \mathrm {SiC}(000\bar {1}) : from surface reconstructions to carbon electronics

resolves10.1021/nl900803z

Comparison of Epitaxial Graphene on Si-face and C-face 4H SiC Formed by Ultrahigh Vacuum and RF Furnace Production

resolves10.1088/0953-8984/16/17/013

Functional surface reconstructions of hexagonal SiC

resolves10.1103/PhysRevLett.100.125504

Why Multilayer Graphene on<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mn>4</mml:mn><mml:mi>H</mml:mi><mml:mtext mathvariant="normal">−</mml:mtext><mml:mi>SiC</mml:mi><mml:mo stretchy="false">(</mml:mo><mml:mn>000</mml:mn><mml:mover accent="true"><mml:mn>1</mml:mn><mml:mo>¯</mml:mo></mml:mover><mml:mo stretchy="false">)</mml:mo></mml:math>Behaves Like a Single Sheet of Graphene

resolves10.1002/pssr.200903145

How the SiC substrate impacts graphene's atomic and electronic structure

resolves10.1103/PhysRevLett.103.226803

First Direct Observation of a Nearly Ideal Graphene Band Structure

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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