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Growth temperature dependent graphene alignment on Ir(111)

https://doi.org/10.1063/1.3548546
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18/18 checkable references clean · checked 2026-07-22

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

The 18 checked references that resolve
resolves10.1021/nl102824h
Graphene: Electronic and Photonic Properties and Devices
resolves10.1038/nature07719
Large-scale pattern growth of graphene films for stretchable transparent electrodes
resolves10.1038/nmat2382
Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide
resolves10.1088/1367-2630/11/7/073050
Dynamics of graphene growth on a metal surface: a time-dependent photoemission study
resolves10.1021/ja102398n
Chemistry under Cover: Tuning Metal−Graphene Interaction by Reactive Intercalation
resolves10.1021/nl901040v
Electronic Structure of Few-Layer Epitaxial Graphene on Ru(0001)
resolves10.1063/1.3106057
Scanning tunneling microscopy on epitaxial bilayer graphene on ruthenium (0001)
resolves10.1088/1367-2630/10/4/043033
Structure of epitaxial graphene on Ir(111)
resolves10.1021/nl0728874
Structural Coherency of Graphene on Ir(111)
resolves10.1088/1367-2630/11/3/039801
Growth of graphene on Ir(111)
resolves10.1103/PhysRevB.80.085430
Defects of graphene on Ir(111): Rotational domains and ridges
resolves10.1016/0036-9748(72)90163-9
The solubility of carbon in rhodium ruthenium, iridium and rhenium
resolves10.1063/1.3225554
Selecting a single orientation for millimeter sized graphene sheets
resolves10.1016/0039-6028(85)90816-7
A study of the carbon adlayer on iridium
resolves10.1088/1367-2630/11/6/063046
Factors influencing graphene growth on metal surfaces
resolves10.1016/0039-6028(86)90321-3
A new LEED instrument for quantitative spot profile analysis
resolves10.1524/zkri.1999.214.10.591
Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction – Part I<sup> <i>1</i> </sup>
resolves10.1524/zkri.1999.214.11.684
Growth of semiconductor layers studied by spot profile analysing low energy electron diffraction – Part II<sup><i>1</i></sup>
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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