Reference health
Surface kinetics of adatoms in vapor phase epitaxial growth of SiC on 6H-SiC{0001} vicinal surfaces
38/38 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
15 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 38 checked references that resolve
resolves10.1063/1.99010
Operation of Schottky-barrier field-effect transistors of 3C-SiC up to 400 °C
resolves10.1063/1.341731
Characterization of device parameters in high-temperature metal-oxide-semiconductor field-effect transistors in β-SiC thin films
resolves10.1063/1.325920
Fabrication of 6H-SiC light-emitting diodes by a rotation dipping technique: Electroluminescence mechanisms
resolves10.1016/0040-6090(76)90353-9
Epitaxial deposition of silicon carbide from silicon tetrachloride and hexane
resolves10.1063/1.341608
Chemical vapor deposition and characterization of 6H-SiC thin films on off-axis 6H-SiC substrates
resolves10.1063/1.102492
Growth of high quality 6H-SiC epitaxial films on vicinal (0001) 6H-SiC wafers
resolves10.1063/1.345159
Hall measurements as a function of temperature on monocrystalline SiC thin films
resolves10.1063/1.351985
Chemical vapor deposition and characterization of undoped and nitrogen-doped single crystalline 6H-SiC
resolves10.1143/JJAP.26.L1815
Fabrication of P-N Junction Diodes Using Homoepitaxially Grown 6H-SiC at Low Temperature by Chemical Vapor Deposition
resolves10.1007/BF02657892
Insitu incorporation of Al and N andp-n junction diode fabrication in alpha(6H)-SiC thin films
resolves10.1016/0022-0248(91)90815-M
Effect of the junction interface properties on blue emission of SiC blue LEDs grown by step-controlled CVD
resolves10.1109/5.90132
Thin film deposition and microelectronic and optoelectronic device fabrication and characterization in monocrystalline alpha and beta silicon carbide
resolves10.1007/BF02665976
Growth rate and surface microstructure in α(6H)–SiC thin films grown by chemical vapor deposition
resolves10.1063/1.105587
Controlled growth of 3C-SiC and 6H-SiC films on low-tilt-angle vicinal (0001) 6H-SiC wafers
resolves10.1098/rsta.1951.0006
The growth of crystals and the equilibrium structure of their surfaces
resolves10.1063/1.1655818
Surface Processes in the Growth of Silicon on (111) Silicon in Ultrahigh Vacuum
resolves10.1143/JJAP.28.1212
Surface Diffusion Length of Gallium during MBE Growth on the Various Misoriented GaAs(001) Substrates
resolves10.1063/1.105114
Excellent uniformity and very low (<50 A/cm2) threshold current density strained InGaAs quantum well diode lasers on GaAs substrate
resolves10.1063/1.105961
Substantial improvement by substrate misorientation in dc performance of Al0.5Ga0.5As/GaAs/Al0.5Ga0.5As double-heterojunction <i>NpN</i> bipolar transistors grown by molecular beam epitaxy
resolves10.1063/1.104649
Scanning tunneling microscopy comparison of GaAs(001) vicinal surfaces grown by molecular beam epitaxy
resolves10.1143/JJAP.21.579
Thermal Oxidation of SiC and Electrical Properties of Al–SiO<sub>2</sub>–SiC MOS Structure
resolves10.1016/0022-0248(88)90096-6
Gas phase kinetics analysis and implications for silicon carbide chemical vapor deposition
resolves10.1016/0022-0248(84)90244-6
Computer modeling of Si and SiC surfaces and surface processes relevant to crystal growth from the vapor
resolves10.1149/1.2407685
A Stagnant Layer Model for the Epitaxial Growth of Silicon from Silane in a Horizontal Reactor
The 15 references without a DOI — listed, not checked
no DOI — not checked2024020212000950200_r1
no DOI — not checked2024020212000950200_r2
no DOI — not checked2024020212000950200_r3
no DOI — not checked2024020212000950200_r6
no DOI — not checked2024020212000950200_r9
no DOI — not checked2024020212000950200_r10
no DOI — not checked2024020212000950200_r11
no DOI — not checked2024020212000950200_r17
no DOI — not checked2024020212000950200_r26
no DOI — not checked2024020212000950200_r29
no DOI — not checked2024020212000950200_r44
no DOI — not checked2024020212000950200_r48
no DOI — not checked2024020212000950200_r49
no DOI — not checked2024020212000950200_r51
no DOI — not checked2024020212000950200_r53
What this badge says. CiteStamped means the CHECKABLE references of this
work were clean at the dated check: each resolved to a known work in a public registry, and none
carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record
Embed this badge
Both snippets point at the live badge image and link back to this page. The badge re-renders from the daily check, so an embed never goes stale by more than a day of visits.
<a href="https://citestamp.com/citestamped/10.1063/1.356439"><img src="https://citestamp.com/citestamped/10.1063/1.356439/badge.svg" alt="CiteStamped reference-health badge" width="460" height="64"></a>
[](https://citestamp.com/citestamped/10.1063/1.356439)