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Electron mobilities in gallium, indium, and aluminum nitrides

https://doi.org/10.1063/1.356650
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37/37 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

13 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 37 checked references that resolve
resolves10.1103/PhysRevB.45.10942
Point-defect energies in the nitrides of aluminum, gallium, and indium
resolves10.1103/PhysRevB.39.3317
Electronic structures and doping of InN,<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>N, and<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">In</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>N
resolves10.1109/5.90133
III-V nitrides for electronic and optoelectronic applications
resolves10.1016/0040-6090(88)90174-5
Properties of sputtered nitride semiconductors
resolves10.1103/PhysRevB.33.1430
Pseudopotential band structure of indium nitride
resolves10.1063/1.1652845
THE PREPARATION AND PROPERTIES OF VAPOR-DEPOSITED SINGLE-CRYSTAL-LINE GaN
resolves10.1063/1.326007
Optical properties of AlN epitaxial thin films in the vacuum ultraviolet region
resolves10.1016/0040-6090(86)90056-8
On the properties of AlN thin films grown by low temperature reactive r.f. sputtering
resolves10.1063/1.347035
Laser-induced chemical vapor deposition of AlN films
resolves10.1116/1.585897
GaN, AlN, and InN: A review
resolves10.1515/zna-1960-0906
Lumineszenz- und Photoleitungseigenschaften von dotiertem GaN
resolves10.1063/1.1653730
Stimulated Emission and Laser Action in Gallium Nitride
resolves10.1016/0921-4526(93)90236-Y
Defects, optical absorption and electron mobility in indium and gallium nitrides
resolves10.1063/1.354787
Monte Carlo simulation of electron transport in gallium nitride
resolves10.1063/1.88002
Monte Carlo calculation of the velocity-field relationship for gallium nitride
resolves10.1016/0022-0248(90)90548-Y
Growth of single crystal GaN substrate using hydride vapor phase epitaxy
resolves10.1063/1.350529
<i>In</i> <i>situ</i> monitoring and Hall measurements of GaN grown with GaN buffer layers
resolves10.1143/JJAP.30.L1705
GaN Growth Using GaN Buffer Layer
resolves10.1103/PhysRevB.4.1211
Absorption, Reflectance, and Luminescence of GaN Epitaxial Layers
resolves10.1143/JJAP.28.L2112
P-Type Conduction in Mg-Doped GaN Treated with Low-Energy Electron Beam Irradiation (LEEBI)
resolves10.1016/0022-3697(92)90116-U
The effect of carrier densities and compensation ratios on the electron mobility of InAsxP1−x
resolves10.1063/1.347650
Majority and minority electron and hole mobilities in heavily doped GaAs
resolves10.1103/PhysRev.125.1815
Interband Electron-Electron Scattering and Transport Phenomena in Semiconductors
resolves10.1103/PhysRevB.4.2436
Quantum Transport Theory of Impurity-Scattering-Limited Mobility in<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mi>n</mml:mi></mml:math>-Type Semiconductors Including Electron-Electron Scattering
resolves10.1063/1.329906
Effect of donor impurities on the conduction and valence bands of silicon
resolves10.1007/BF02817693
Hall and drift mobilities in molecular beam epitaxial grown GaAs
resolves10.1103/PhysRev.136.A869
Piezoelectric Scattering in Semiconductors
resolves10.1103/PhysRevLett.20.550
Dielectric Definition of Electronegativity
resolves10.1103/PhysRev.182.891
Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric Constant
resolves10.1016/S0022-3697(73)80090-3
Electrical properties of n-type vapor-grown gallium nitride
resolves10.1063/1.104575
Growth of high optical and electrical quality GaN layers using low-pressure metalorganic chemical vapor deposition
resolves10.1063/1.104613
Electrical characterization of molecular beam epitaxial GaAs with peak electron mobilities up to ≊4×105 cm2 V−1 s−1
resolves10.1063/1.339827
Reassessment of ionized impurity scattering and compensation in GaAs and InP including correlation scattering
resolves10.1016/0038-1101(92)90157-8
On the calculation of electron mobility in In0.53Ga0.47As
resolves10.1103/PhysRev.96.1226
Resistivity and Hall Effect of Germanium at Low Temperatures
resolves10.1063/1.108823
Electron transport mechanism in gallium nitride
resolves10.1049/el:19840729
Electron mobility in indium nitride
The 13 references without a DOI — listed, not checked
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no DOI — not checked2024020212583256700_r50
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