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Strain in Si doped GaN and the Fermi level effect
26/26 checkable references clean · checked 2026-07-25
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
3 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 26 checked references that resolve
resolves10.1103/PhysRevB.59.5561
Origin of defect-related photoluminescence bands in doped and nominally undoped GaN
resolves10.1063/1.117105
Effect of Si doping on the dislocation structure of GaN grown on the A-face of sapphire
resolves10.1063/1.119893
Evolution of stress relaxation and yellow luminescence in GaN/sapphire by Si incorporation
resolves10.1063/1.1595133
Si doping effect on strain reduction in compressively strained Al0.49Ga0.51N thin films
resolves10.1063/1.1613360
Stress relaxation in mismatched layers due to threading dislocation inclination
resolves10.1063/1.3160331
Tensile stress generation and dislocation reduction in Si-doped AlxGa1−xN films
resolves10.1063/1.373529
Effect of Si doping on strain, cracking, and microstructure in GaN thin films grown by metalorganic chemical vapor deposition
resolves10.1063/1.2986448
<i>In situ</i> measurement of stress generation arising from dislocation inclination in AlxGa1−xN:Si thin films
resolves10.1063/1.99168
Mechanisms of doping-enhanced superlattice disordering and of gallium self-diffusion in GaAs
resolves10.1063/1.2952027
Influence of gallium supersaturation on the properties of GaN grown by metalorganic chemical vapor deposition
resolves10.1063/1.3457149
X-ray characterization of composition and relaxation of AlxGa1−xN(≤x≤1) layers grown on GaN/sapphire templates by low pressure organometallic vapor phase epitaxy
resolves10.1063/1.2433754
Low dislocation densities and long carrier lifetimes in GaN thin films grown on a SiNx nanonetwork
resolves10.1063/1.2749484
Accurate experimental determination of the Poisson’s ratio of GaN using high-resolution x-ray diffraction
resolves10.1063/1.364018
Dislocation motion in GaN light-emitting devices and its effect on device lifetime
resolves10.1149/1.2408166
Reduced Dislocation Densities in Liquid Phase Epitaxy Layers by Intermittent Growth
resolves10.1063/1.1682673
First-principles calculations for defects and impurities: Applications to III-nitrides
resolves10.1063/1.89145
Dislocation climb model in compound semiconductors with zinc blende structure
resolves10.1063/1.2005379
Impact of deep levels on the electrical conductivity and luminescence of gallium nitride codoped with carbon and silicon
The 3 references without a DOI — listed, not checked
no DOI — not checked2023070216575573200_c16
no DOI — not checked2023070216575573200_c22
no DOI — not checkedTheory of Dislocations
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