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Modeling the optical dielectric function of GaAs and AlAs: Extension of Adachi’s model

https://doi.org/10.1063/1.363586
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37/37 checkable references clean · checked 2026-08-19

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

7 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 37 checked references that resolve
resolves10.1103/PhysRevLett.23.1156
Optical Dispersion and the Structure of Solids
resolves10.1103/PhysRevB.3.1338
Behavior of the Electronic Dielectric Constant in Covalent and Ionic Materials
resolves10.1016/0038-1098(74)90014-3
Refractive index of Ga1−xAlxAs
resolves10.1063/1.334530
Refractive index dispersion in group IV and binary III-V semiconductors: Comparison of calculated and experimental values
resolves10.1063/1.357874
Optical dispersion of Al<i>x</i>Ga1−<i>x</i>As at crystal growth temperature
resolves10.1063/1.351908
Characterization of vertical-cavity semiconductor structures
resolves10.1109/3.214492
Design of widely tunable semiconductor lasers using grating-assisted codirectional-coupler filters
resolves10.1063/1.109888
Photonic integrated tunable receivers with optical preamplifiers for direct detection
resolves10.1063/1.113685
Temperature-dependent threshold and modulation characteristics in InGaAs/GaAs quantum-well ridge-waveguide lasers
resolves10.1063/1.333785
Optical properties and damage analysis of GaAs single crystals partly amorphized by ion implantation
resolves10.1063/1.350290
A modified harmonic oscillator approximation scheme for the dielectric constants of Al<i>x</i>Ga1−<i>x</i>As
resolves10.1063/1.359435
Determination of AlAs optical constants by variable angle spectroscopic ellipsometry and a multisample analysis
resolves10.1063/1.358632
Optical constants of Ga<i>x</i>In1−<i>x</i>P lattice matched to GaAs
resolves10.1063/1.349285
Temperature dependence of optical properties of GaAs
resolves10.1116/1.587047
Measurement of GaAs temperature-dependent optical constants by spectroscopic ellipsometry
resolves10.1063/1.358861
Temperature-dependent pseudodielectric functions of GaAs determined by spectroscopic ellipsometry
resolves10.1063/1.361137
Studies of thin strained InAs, AlAs, and AlSb layers by spectroscopic ellipsometry
resolves10.1063/1.331425
Refractive indices of III–V compounds: Key properties of InGaAsP relevant to device design
resolves10.1063/1.336070
GaAs, AlAs, and Al <i>x</i> Ga1− <i>x</i> As: Material parameters for use in research and device applications
resolves10.1103/PhysRevB.35.7454
Model dielectric constants of GaP, GaAs, GaSb, InP, InAs, and InSb
resolves10.1103/PhysRevB.38.12345
Optical properties of<mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Al</mml:mi></mml:mrow><mml:mrow><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math><mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"><mml:mrow><mml:msub><mml:mrow><mml:mi mathvariant="normal">Ga</mml:mi></mml:mrow><mml:mrow><mml:mn>1</mml:mn><mml:mi mathvariant="normal">−</mml:mi><mml:mi mathvariant="normal">x</mml:mi></mml:mrow></mml:msub></mml:mrow></mml:math>As alloys
resolves10.1103/PhysRevB.41.1003
Excitonic effects in the optical spectrum of GaAs
resolves10.1063/1.346621
Optical constants of Al <i>x</i> Ga1− <i>x</i> As
resolves10.1063/1.354543
Optical properties of CdTe: Experiment and modeling
resolves10.1143/JJAP.32.4900
Optical Properties of Amorphous Si Partially Crystallized by Thermal Annealing
resolves10.1063/1.359966
Spectroscopic ellipsometry and thermoreflectance of GaAs
resolves10.1063/1.359434
Consistent formula for the refractive index of Al<i>x</i>Ga1−<i>x</i>As below the band edge
resolves10.1103/PhysRevB.45.11749
Modeling the optical dielectric function of semiconductors: Extension of the critical-point parabolic-band approximation
resolves10.1063/1.359922
Modeling the optical dielectric function of II-VI compound CdTe
resolves10.1103/PhysRevE.52.6862
Acceptance-probability-controlled simulated annealing: A method for modeling the optical constants of solids
resolves10.1103/PhysRevB.35.9174
Interband critical points of GaAs and their temperature dependence
resolves10.1016/0038-1098(87)90021-4
Optical properties of AlAs
resolves10.1016/0040-6090(93)90735-8
Spin-on silicon dioxide films on indium antimony
resolves10.1103/PhysRevB.41.7602
Determination of accurate critical-point energies and linewidths from optical data
resolves10.1016/0038-1098(87)90207-9
AlAs Phonon parameters and heterostructure characterization
resolves10.1016/0038-1098(70)90233-4
Some optical properties of AlAs
resolves10.1063/1.1660760
Refractive Index of AlAs
The 7 references without a DOI — listed, not checked
no DOI — not checked2024020217483855900_r6
no DOI — not checked2024020217483855900_r8
no DOI — not checked2024020217483855900_r18
no DOI — not checked2024020217483855900_r32
no DOI — not checked2024020217483855900_r39
no DOI — not checked2024020217483855900_r40
no DOI — not checked2024020217483855900_r43
What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

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