Reference health

Interface engineering for the passivation of c-Si with O3-based atomic layer deposited AlOx for solar cell application

23/23 checkable references clean · checked 2026-07-23

Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.

1 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.

The 23 checked references that resolve

resolves10.1063/1.2945287

High efficiency n-type Si solar cells on Al2O3-passivated boron emitters

resolves10.1002/pip.823

Surface passivation of high‐efficiency silicon solar cells by atomic‐layer‐deposited Al2O3

resolves10.1002/pssr.201105045

19.4%‐efficient large‐area fully screen‐printed silicon solar cells

resolves10.1002/pip.1129

19%‐efficient and 43 µm‐thick crystalline Si solar cell from layer transfer using porous silicon

resolves10.1063/1.2240736

Ultralow surface recombination of c-Si substrates passivated by plasma-assisted atomic layer deposited Al2O3

resolves10.1063/1.2784168

Excellent passivation of highly doped p-type Si surfaces by the negative-charge-dielectric Al2O3

resolves10.1063/1.3505311

Very low surface recombination velocities on p- and n-type c-Si by ultrafast spatial atomic layer deposition of aluminum oxide

resolves10.1002/pssr.200903334

Silicon surface passivation by ultrathin Al2O3 films synthesized by thermal and plasma atomic layer deposition

resolves10.1063/1.1515951

Improvement in Al2O3 dielectric behavior by using ozone as an oxidant for the atomic layer deposition technique

resolves10.1149/1.3501970

Influence of the Oxidant on the Chemical and Field-Effect Passivation of Si by ALD Al[sub 2]O[sub 3]

resolves10.1063/1.364403

Accurate method for the determination of bulk minority-carrier lifetimes of mono- and multicrystalline silicon wafers

resolves10.1063/1.357521

Dimensionless solution of the equation describing the effect of surface recombination on carrier decay in semiconductors

resolves10.1063/1.3021091

On the c-Si surface passivation mechanism by the negative-charge-dielectric Al2O3

resolves10.1063/1.3264572

Stability of Al2O3 and Al2O3/a-SiNx:H stacks for surface passivation of crystalline silicon

resolves10.1149/1.3276040

Influence of the Deposition Temperature on the c-Si Surface Passivation by Al[sub 2]O[sub 3] Films Synthesized by ALD and PECVD

resolves10.1143/JJAP.50.012301

Effects of Annealing and Atomic Hydrogen Treatment on Aluminum Oxide Passivation Layers for Crystalline Silicon Solar Cells

resolves10.1063/1.3658246

Controlling the fixed charge and passivation properties of Si(100)/Al2O3 interfaces using ultrathin SiO2 interlayers synthesized by atomic layer deposition

resolves10.1063/1.1520334

HfO 2 / SiO 2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

resolves10.1063/1.125519

Evidence of aluminum silicate formation during chemical vapor deposition of amorphous Al2O3 thin films on Si(100)

resolves10.1116/1.1507330

Angle-resolved x-ray photoelectron spectroscopy of ultrathin Al2O3 films grown by atomic layer deposition

resolves10.1063/1.3587227

Electronic and chemical properties of the c-Si/Al2O3 interface

resolves10.1116/1.1472422

Annealing effects of aluminum silicate films grown on Si(100)

resolves10.1063/1.1385803

Ultrathin (&lt;4 nm) SiO2 and Si–O–N gate dielectric layers for silicon microelectronics: Understanding the processing, structure, and physical and electrical limits

The 1 reference without a DOI — listed, not checked

no DOI — not checkedSurface Recombination of Crystalline Silicon Substrates Passivated by Atomic-Layer-Deposited AlOx

What this badge says. CiteStamped means the CHECKABLE references of this work were clean at the dated check: each resolved to a known work in a public registry, and none carried a retraction notice at that time. It says nothing about the quality, findings, or importance of the work itself, and nothing about references deposited without a DOI.

checked 2026-07-23 — re-checked daily as this page is visited; titles and statuses come from Crossref and DataCite and are not part of the signed record

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