Reference health
Fast and slow transient charging in various III-V field-effect transistors with atomic-layer-deposited-Al2O3 gate dielectric
18/18 checkable references clean · checked 2026-07-23
Every reference with a DOI in the deposited reference list resolved to a known work in Crossref or DataCite at the dated check, and none carried a retraction, withdrawal, or removal notice.
7 without a DOI — not checked. A reference deposited without a DOI is never matched by title or guessed at; it stays outside the checked set, and this line discloses that.
The 18 checked references that resolve
resolves10.1063/1.2931708
Self-aligned inversion-type enhancement-mode GaAs metal-oxide-semiconductor field-effect transistor with Al2O3 gate dielectric
resolves10.1063/1.3549197
Impact of SF6 plasma treatment on performance of TaN–HfO2–InP metal-oxide-semiconductor field-effect transistor
resolves10.1063/1.2943186
Inversion-type indium phosphide metal-oxide-semiconductor field-effect transistors with equivalent oxide thickness of 12Å using stacked HfAlOx∕HfO2 gate dielectric
resolves10.1109/LED.2008.922031
Fabrication of Self-Aligned Enhancement-Mode $ \hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs With $ \hbox{TaN/HfO}_{2}\hbox{/AlN}$ Gate Stack
resolves10.1109/LED.2005.852746
Intrinsic mobility evaluation of high-/spl kappa/ gate dielectric transistors using pulsed I/sub d/-V/sub g/
resolves10.1016/j.microrel.2007.01.053
Electrical characterization and analysis techniques for the high-κ era
resolves10.1109/T-ED.1984.21472
A reliable approach to charge-pumping measurements in MOS transistors
resolves10.1063/1.3027476
Achieving a low interfacial density of states in atomic layer deposited Al2O3 on In0.53Ga0.47As
resolves10.1063/1.3315870
Charge-pumping characterization of interface traps in Al2O3/In0.75Ga0.25As metal-oxide-semiconductor field-effect transistors
resolves10.1063/1.2937404
Chemical and physical interface studies of the atomic-layer-deposited Al2O3 on GaAs substrates
resolves10.1109/LED.2007.900863
Extraction of the Threshold-Voltage Shift by the Single-Pulse Technique
resolves10.1063/1.3521284
Hall mobility measurements in enhancement-mode GaAs field-effect transistors with Al2O3 gate dielectric
resolves10.1109/TDMR.2008.2002352
Advanced Energetic and Lateral Sensitive Charge Pumping Profiling Methods for MOSFET Device Characterization—Analytical Discussion and Case Studies
resolves10.1063/1.361786
Extraction of slow oxide trap concentration profiles in metal–oxide–semiconductor transistors using the charge pumping method
resolves10.1063/1.1619567
Electrical isolation of <i>n</i>- and p-In0.53Ga0.47As epilayers using ion irradiation
The 7 references without a DOI — listed, not checked
no DOI — not checkedSelf-aligned n- and p-channel GaAs MOSFETs on undoped and p-type substrates using HfO2 and silicon interface passivation layer
no DOI — not checkedHigh-performance sub-micron inversion-type enhancement-mode InGaAs MOSFET with ALD Al2O3, HfO2, and HfAlO as gate dielectrics
no DOI — not checkedIntrinsic characteristics of high-k devices and implications of fast transient charging effects (FTCE)
no DOI — not checkedIEEE 41st Annual IRPS Technical Digest
no DOI — not checkedMulti-probe interface characterization of In0.65Ga0.35As/Al2O3 MOSFET
no DOI — not checkedEnergy distribution of interface traps in high-K gated MOSFETs
no DOI — not checkedSolid State Electronic Devices
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carried a retraction notice at that time. It says nothing about the quality, findings,
or importance of the work itself, and nothing about references deposited without a DOI.
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